SG10201910926YA - Fill on demand ampoule refill - Google Patents

Fill on demand ampoule refill

Info

Publication number
SG10201910926YA
SG10201910926YA SG10201910926YA SG10201910926YA SG10201910926YA SG 10201910926Y A SG10201910926Y A SG 10201910926YA SG 10201910926Y A SG10201910926Y A SG 10201910926YA SG 10201910926Y A SG10201910926Y A SG 10201910926YA SG 10201910926Y A SG10201910926Y A SG 10201910926YA
Authority
SG
Singapore
Prior art keywords
fill
demand
refill
ampoule refill
demand ampoule
Prior art date
Application number
SG10201910926YA
Inventor
Tuan Nguyen
Eashwar Ranganathan
Shankar Swaminathan
Adrien Lavoie
Chloe Baldasseroni
Ramesh Chandrasekharan
Frank L Pasquale
Jennifer L Petraglia
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/720,595 external-priority patent/US11072860B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201910926YA publication Critical patent/SG10201910926YA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65BMACHINES, APPARATUS OR DEVICES FOR, OR METHODS OF, PACKAGING ARTICLES OR MATERIALS; UNPACKING
    • B65B3/00Packaging plastic material, semiliquids, liquids or mixed solids and liquids, in individual containers or receptacles, e.g. bags, sacks, boxes, cartons, cans, or jars
    • B65B3/04Methods of, or means for, filling the material into the containers or receptacles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67276Production flow monitoring, e.g. for increasing throughput
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG10201910926YA 2015-05-22 2016-05-20 Fill on demand ampoule refill SG10201910926YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/720,595 US11072860B2 (en) 2014-08-22 2015-05-22 Fill on demand ampoule refill

Publications (1)

Publication Number Publication Date
SG10201910926YA true SG10201910926YA (en) 2020-01-30

Family

ID=57359190

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201910926YA SG10201910926YA (en) 2015-05-22 2016-05-20 Fill on demand ampoule refill
SG10201604041SA SG10201604041SA (en) 2015-05-22 2016-05-20 Fill on demand ampoule refill

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201604041SA SG10201604041SA (en) 2015-05-22 2016-05-20 Fill on demand ampoule refill

Country Status (5)

Country Link
JP (1) JP6821327B2 (en)
KR (1) KR102647515B1 (en)
CN (2) CN111508870B (en)
SG (2) SG10201910926YA (en)
TW (1) TWI713524B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10351953B2 (en) * 2017-03-16 2019-07-16 Lam Research Corporation Systems and methods for flow monitoring in a precursor vapor supply system of a substrate processing system
CN108962781B (en) * 2017-05-23 2020-12-08 北京北方华创微电子装备有限公司 Liquid medicine supply system
US12084771B2 (en) 2021-03-02 2024-09-10 Applied Materials, Inc. Control of liquid delivery in auto-refill systems

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63136614A (en) * 1986-11-28 1988-06-08 Hitachi Ltd Processor
JP2742327B2 (en) * 1990-10-19 1998-04-22 富士写真フイルム株式会社 Developing device operation method
US5465766A (en) * 1993-04-28 1995-11-14 Advanced Delivery & Chemical Systems, Inc. Chemical refill system for high purity chemicals
JP3409910B2 (en) * 1994-02-20 2003-05-26 株式会社エステック Liquid material vaporizer
US5944940A (en) * 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
US6443435B1 (en) * 2000-10-23 2002-09-03 Applied Materials, Inc. Vaporization of precursors at point of use
US20040093938A1 (en) * 2002-11-15 2004-05-20 Chung-Te Tsai Liquid in pipeline and liquid level detection and warning system
JP2006016641A (en) * 2004-06-30 2006-01-19 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Method for producing metal silicon oxide, method for producing metal silicon oxynitride and method for producing silicon-doped metal nitride
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US20100151261A1 (en) * 2006-07-21 2010-06-17 Ce Ma Methods and apparatus for the vaporization and delivery of solution precursors for atomic layer deposition
KR100855582B1 (en) * 2007-01-12 2008-09-03 삼성전자주식회사 Liquid supplying unit and method, facility for treating substrates with the unit, and method for treating substrates
US20090214777A1 (en) * 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
KR20110088564A (en) * 2008-11-11 2011-08-03 프랙스에어 테크놀로지, 인코포레이티드 Reagent dispensing apparatuses and delivery methods
WO2010083510A1 (en) * 2009-01-16 2010-07-22 Veeco Instruments, Inc. Composition and method for low temperature deposition of ruthenium
CN103635990B (en) * 2011-05-28 2016-11-16 恩特格里斯公司 There is the ampoule refilled of detergent power
CN103041954A (en) * 2011-10-13 2013-04-17 北大方正集团有限公司 Liquid level alarm system for spin coating equipment
JP5841007B2 (en) * 2012-05-28 2016-01-06 株式会社Screenセミコンダクターソリューションズ Chemical supply method and substrate processing apparatus
JP6199037B2 (en) * 2013-01-15 2017-09-20 鳴香株式会社 Liquid fertilizer supply system and automatic irrigator

Also Published As

Publication number Publication date
JP2017014614A (en) 2017-01-19
CN106169432A (en) 2016-11-30
CN111508870A (en) 2020-08-07
CN111508870B (en) 2024-03-01
KR102647515B1 (en) 2024-03-13
TWI713524B (en) 2020-12-21
SG10201604041SA (en) 2016-12-29
CN106169432B (en) 2020-03-17
JP6821327B2 (en) 2021-01-27
KR20160137400A (en) 2016-11-30
TW201708599A (en) 2017-03-01

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