JP6821327B2 - On-demand filling ampoule replenishment - Google Patents

Description

Some substrate processing operations may utilize precursors. The precursor may be housed in an ampoule and delivered to the reactor on a regular basis. Unvariable head volume and unvariable precursor temperature may be desired to ensure the uniformity of the substrate being processed. In addition, agitation of the precursor by replenishment may not be desirable when the substrate is processed. Replenishment is time consuming and can reduce throughput.

In certain implementations, methods for replenishing ampoules in substrate processing equipment may be detailed. This method is a step of (a) determining whether the ampoule replenishment start condition is satisfied, and the agitation of the precursor caused by the ampoule replenishment start condition by replenishing the precursor to the ampoule is processed by the substrate processing apparatus. A step that includes determining that the substrate processing device is or will soon reach a stage that has minimal effect on the integrity of the substrate to be produced, and (b) replenishing the ampoule with precursors. , The step of replenishing the ampoule with the precursor at the same time as at least one other substrate processing operation, (c) the step of determining whether the ampoule replenishment stop condition is satisfied, and (d) the precursor to the ampoule. It may include a step of discontinuing body replenishment.

One aspect of the present disclosure relates to a method for filling an ampoule of a substrate processing apparatus. Such methods are (a) a step of determining whether the ampoule filling start condition for filling the ampoule with the liquid precursor is satisfied, and (b) a step of filling the ampoule with the precursor. The step of filling the precursor at the same time as at least one other substrate processing operation, and (c) reading the sensor level in the ampoule, indicating that the filling has not yet been completed, and (d). It is characterized by a step of determining whether the secondary filling stop condition is satisfied and (e) a step of stopping the filling of the precursor into the ampoule in response to the determination that the secondary filling stop condition is satisfied. Good.

In certain embodiments, the method further comprises maintaining a cumulative filling time beginning at the end of the final round in which the ampoule received the precursor. In some implementations, the secondary filling stop condition includes determining that the cumulative filling time exceeds the threshold. In some implementations, the cumulative filling time is temporarily stopped at one or more times when ampoule replenishment is temporarily stopped and deposition begins, but the cumulative filling time is re-filled when filling is resumed. Start. In some implementations, the threshold is between about 50 and 90 seconds.

In certain embodiments, the method comprises initiating a soft shutdown when filling is aborted in step (e). In some cases, this method is performed when the sensor that produces the sensor level in the ampoule is malfunctioning. In some cases, this method is performed when the system providing the liquid precursor to the ampoule is malfunctioning.

In certain embodiments, the ampoule filling initiation condition has minimal effect on the consistency of the substrate being processed by the substrate processing equipment with the agitation of the liquid precursor caused by filling the ampoule with the precursor. Includes the determination that the board processing equipment is in the stage or is coming soon. In some embodiments, the ampoule filling start condition includes determining that the sequence of deposition operations is complete on the substrate contained within the substrate processing apparatus. In some cases, the sequence of deposition operations is the deposition operation associated with atomic layer deposition. In certain embodiments, the ampoule filling start condition comprises determining that the precursor volume is less than the threshold volume. In certain embodiments, the ampoule filling initiation condition includes determining that a setup for the deposition operation is currently underway.

In some implementations, at least one other substrate processing operation performed at the same time as filling the ampoule includes a wafer indexing operation. In some cases, at least one other substrate processing operation performed at the same time as filling the ampoule comprises a temperature soak of the precursor and / or substrate. In some cases, at least one other substrate processing operation performed at the same time as filling the ampoule includes an exhaust operation to the base pressure.

Some aspects of the disclosure relate to methods for controlling ampoule filling in substrate processing equipment. Such methods include (a) starting a counter for the number of deposition cycles in which the precursor stored in the liquid state in the ampoule is fed to the reaction chamber of the substrate processing apparatus, and (b) filling the ampoule. A step of determining if the starting conditions are met, and (c) a step of reading the sensor level in the ampoule, indicating that the ampoule is full enough that the liquid precursor should not be provided to the ampoule, and (d). ) Stop the deposition cycle in response to the step of determining if the number of deposition cycles counted by the counter exceeds the threshold and (e) the determination that the number of deposition cycles counted by the counter exceeds the threshold. It may be characterized by a step to be performed. In some implementations, the threshold is about 3000-6000 deposition cycles.

In certain embodiments, the step of initiating the counter in step (a) is performed when the liquid precursor is fed to the ampoule, which counts until the liquid precursor is fed back to the ampoule. Continue to do. In some implementations, this method comprises initiating a soft shutdown when the deposition cycle is aborted in step (e).

In some cases, this method is performed when the sensor that produces the sensor level in the ampoule is malfunctioning. In certain embodiments, the ampoule filling initiation condition has minimal effect on the consistency of the substrate being processed by the substrate processing equipment with the agitation of the liquid precursor caused by filling the ampoule with the precursor. Includes the determination that the board processing equipment is in the stage or is coming soon. In certain embodiments, the ampoule filling start condition includes determining that the sequence of deposition operations is complete on the substrate contained within the substrate processing apparatus. In some examples, the sequence of sedimentary operations is the sedimentary operation associated with atomic layer deposition.
In some implementations, the ampoule filling start condition includes determining that the setup for the deposition operation is at that time. In some implementations, the ampoule filling start condition includes one other substrate processing operation that takes place at the same time as the ampoule filling, and the substrate processing operation described above is a wafer indexing operation, precursor and / or substrate temperature. Selected from the group consisting of soaks and exhaust operations to base pressure.

Some aspects of the disclosure include (1) an ampoule configured to be fluid-connected to a precursor feeding system and a precursor source and to contain a liquid precursor, and (2) one. Alternatively, a precursor replenishment system comprising a plurality of controls, wherein one or more controls (a) feed the precursor stored in a liquid state in an ampol to the reaction chamber of the substrate processing apparatus. Start the counter for the number of deposition cycles to be performed, (b) determine if the ampule filling start conditions are met, and (c) the ampule is full enough that the liquid precursor should not be provided to the ampule. The sensor level in the ample is read, (d) it is determined whether the number of deposition cycles counted by the counter exceeds the threshold, and (e) the number of deposition cycles counted by the counter exceeds the threshold. The present invention relates to a precursor replenishment system that may be configured to abort the deposition cycle in response to In some implementations, the threshold comprises about 3000-6000 deposition cycles.

In some designs, one or more controllers further activate the counter in step (a) when the liquid precursor is fed to the ampoule, and the liquid precursor is fed back to the ampoule. It is configured to keep counting until. In some implementations, one or more controllers are further configured to initiate a soft shutdown when the deposition cycle is aborted in step (e).

In certain embodiments, the ampoule filling initiation condition has minimal effect on the consistency of the substrate being processed by the substrate processing equipment with the agitation of the liquid precursor caused by filling the ampoule with the precursor. Includes the determination that the board processing equipment is in the stage or is coming soon. In certain embodiments, the ampoule filling start condition includes determining that the sequence of deposition operations is complete on the substrate contained within the substrate processing apparatus. In certain embodiments, the ampoule filling start condition comprises one other substrate processing operation performed at the same time as the ampoule filling, the substrate processing operation being a wafer indexing operation, precursor and / or substrate temperature soaking. , And the exhaust operation to the base pressure are selected from the group.

In some embodiments, the substrate processing apparatus includes a deposition chamber and a substrate processing station housed within the deposition chamber, the substrate processing station including a substrate holder configured to receive the substrate, and a precursor. The feed system is configured to feed the precursor during the processing of the substrate received by the substrate processing station.

Another aspect of the disclosure is an ampoule configured to (1) fluidly connect to a precursor feeding system and a precursor source and to contain a liquid precursor, and (2) one or more. In a precursor replenishment system including a plurality of control devices, one or more control devices determine (a) whether the amplifier filling start condition for filling a liquid precursor into an ampol is satisfied, and (a). b) Filling the amplifier with the precursor and filling the amplifier with the precursor is performed at the same time as at least one other substrate processing operation, and (c) in the amplifier indicating that the filling has not yet been completed. The sensor level is read, (d) it is determined whether the secondary filling stop condition is satisfied, and (e) in response to the determination that the secondary filling stop condition is satisfied, the filling of the precursor into the amplifier is stopped. With respect to a precursor replenishment system configured to.

In certain embodiments, one or more controllers are further configured to maintain a cumulative filling time beginning at the end of the final round in which the ampoule received the precursor. In some cases, the secondary filling stop condition includes determining that the cumulative filling time exceeds the threshold. In some implementations, one or more controllers are further configured to temporarily suspend cumulative filling time at one or more times when ampoule replenishment is temporarily suspended and deposition begins. Will be done.

In some implementations, the threshold is between about 50 and 90 seconds. In some embodiments, one or more controllers are further configured to initiate a soft shutdown when filling is aborted in step (e).

In certain embodiments, the ampoule filling initiation condition has minimal effect on the consistency of the substrate being processed by the substrate processing equipment with the agitation of the liquid precursor caused by filling the ampoule with the precursor. Includes the determination that the board processing equipment is in the stage or is coming soon. In certain embodiments, the ampoule filling start condition comprises determining that the precursor volume is less than the threshold volume. In some implementations, at least one other substrate processing operation performed at the same time as filling the ampoule involves a temperature soak of the precursor and / or substrate.

In some embodiments, the substrate processing apparatus comprises a deposition chamber and a substrate processing station housed within the deposition chamber, the substrate processing station comprising a substrate holder configured to receive the substrate, and a precursor. The feed system is configured to feed the precursor during the processing of the substrate received by the substrate processing station.

These and other features of the invention will be described in more detail below with reference to the drawings.

It is a schematic diagram of an exemplary substrate processing apparatus having an on-demand filling ampoule.

FIG. 6 is a schematic representation of another exemplary substrate processing apparatus having an on-demand filling ampoule.

FIG. 6 is a process flow diagram detailing an exemplary deposition process operation utilizing an on-demand filling ampoule.

FIG. 5 is a process flow diagram detailing an algorithm for controlling an exemplary on-demand filling ampoule.

A step in substrate processing relating to the exemplary substrate processing apparatus of FIG. 1A is shown.

It is a figure which shows another step in the substrate processing with respect to the exemplary substrate processing apparatus of FIG. 1A.

It is a figure which shows the further step in the substrate processing with respect to the exemplary substrate processing apparatus of FIG. 1A.

It is a figure which shows the further step in the substrate processing with respect to the exemplary substrate processing apparatus of FIG. 1A.

It is a figure which shows the comparison of the substrate processing result about the substrate processing which used on-demand filling and the substrate processing which did not use on-demand filling.

It is a figure which shows the ampoule which has a sensor, and a plurality of sensor levels suitable for preventing overfilling and underfilling.

It is a flow chart about the implementation of the ampoule overfill protection.

It is a flow chart regarding the implementation of protection of a low ampoule liquid level.

Details of one or more implementations of the subject matter described herein are given in the accompanying drawings and in the following description. Other features, aspects, and advantages will become apparent from the specification, drawings, and claims. It should be noted that the relative dimensions of the figures below may not be drawn to the correct scale unless otherwise indicated to be the correct scale drawing.

As used herein, the term "semiconductor wafer" is formed from a wafer formed from a semiconductor material (eg silicon) and a material generally not identified as a semiconductor (eg dielectric and / or conductor), although It should be understood that it may typically represent both with wafers on which semiconductor materials are provided. Silicon on insulator (SOI) wafers are one such example. The devices and methods described in the present disclosure may be used to process semiconductor wafers of many sizes, including semiconductor wafers with diameters of 200 mm, 300 mm, and 450 mm.

Homogeneity is one important factor in the processing of high quality semiconductor wafers. For example, the thickness and quality of the deposited layers should be uniform between wafers and within multiple features of a wafer. In certain embodiments of semiconductor processing, the liquid precursor may need to be vaporized before being deposited on the semiconductor wafer. The liquid precursor may be housed in an ampoule, and a carrier gas such as argon or other inert gas may flow through the ampoule to transport the vaporized precursor to the semiconductor processing chamber. The carrier gas may be "pushed" (pushed through the line) or "pulled" through the ampoule to carry the vaporized precursor (possibly by vacuum, the gas is pushed through the line). Be drawn in). In certain deposition processes, such as atomic layer deposition (ALD), a relatively constant head volume of gas in the ampoules and a constant precursor temperature may benefit from wafer uniformity. In certain such implementations, the target head volume may be about 20-30% of the ampoule volume. Therefore, when the head volume is about 20-30% of the ampoule volume, about 70-80% of the ampoule may be filled with the precursor. In addition, the absence of precursor agitation may also benefit from wafer uniformity. Precursor agitation results in non-uniform vaporization of the precursor. Finally, high wafer throughput is important in the manufacture of semiconductor wafers. Currently, ampoules are typically refilled by manual filling, automatic filling, simultaneous filling, or filling during maintenance. However, at present, there is no technique that combines head volume and precursor temperature, which are fairly constant when used during deposition, with no precursor agitation during deposition, and high wafer throughput.

FIG. 1A is a schematic view of an exemplary substrate processing apparatus with an on-demand filling ampoule. FIG. 1A shows a substrate processing apparatus 100 having an ampoule 102 and a processing chamber 132.

In the figure shown in FIG. 1A, the ampoule 102 contains the precursor 104. In certain implementations, the ampoule volume may be between about 600 mL and 3 L. In the illustrated implementation, the ampoule may be an ampoule of about 1.2 L. The precursor flows into the ampoule 102 through the flow path 112. The valve 114 controls the flow of precursors through the flow path 112. When the valve 114 is open, the precursor may flow through the flow path 112 into the ampoule 102 and fill the ampoule 102. When the valve 114 is closed, the precursor cannot flow into the ampoule 102. In the illustrated implementation, the flow path 112 is a flow path connected to the bottom of the ampoule 102. In other implementations, the flow path accommodating the precursor may have other configurations such as a dipstick, and the ampoule may be filled from a region other than the bottom of the ampoule.

The processing chamber 132 includes a manifold 120 and a shower head 122. Some embodiments may include multiple shower heads, such as two shower heads or four shower heads. In such implementation, the manifold may distribute the fluid to the shower head. Certain other implementations may replace the manifold with another device for distributing the precursor, such as an injector. In other implementations, the processing chamber may not include a manifold.

The shower head 122 may be fluid-connected to the manifold 120 via the flow path 138, and a valve 130 may be installed in the flow path to control the flow of fluid from the manifold 120 to the shower head 122. The shower head 122 may distribute the fluid flowing through the flow path 138 to a process station located within the processing chamber 132. The process station may include a substrate. The process station is not shown in FIG. 1A.

The manifold 120 may be connected to a vacuum via another flow path. The valve 128 may control the vacuum. In a particular implementation, at most one of the valves 130 and 128 may be open at any given time. Vacuum may be used to allow continuous flow of carrier gas and / or precursor gas when the shower head 122 is not ready to receive fluid flow.

Channels 118 and 136 connect the ampoule 102 to the manifold 120. A valve 126 is located in the flow path 118. The valve 126 controls the flow of all fluid to the manifold 120. When the valve 126 is closed, fluid cannot flow into the manifold 120. Conversely, when the valve 126 is open, fluid may flow into the manifold. Further, a valve 124 is also located in the flow path 118. The valve 124 controls the flow of carrier gas to the valve 126.

The valve 116 is located in the flow path 136. The valve 116 controls the flow of precursor gas from the ampoule 102 to the valve 126.

The flow path 106 connects the substrate processing apparatus 100 to the carrier gas source. The flow of carrier gas through the flow path 106 into the remaining flow paths of the substrate processing apparatus 100 is controlled by the valve 108. When the valve 108 is closed, fluid cannot flow through the substrate processing apparatus 100.

The flow path 134 connects the flow path 106 to the ampoule 102. A valve 110 located in the flow path 134 controls the flow of carrier gas from the flow path 106 into the ampoule 102. The carrier gas may flow into the ampoule 102 and then mix with the vaporized precursor to produce a precursor gas.

The flow of fluid through the substrate processing apparatus 100 may be controlled by opening and closing various valves. Some configurations of valves that are opened and closed are discussed in more detail in FIGS. 4A-4D.

FIG. 1B is a schematic view of another exemplary substrate processing apparatus with an on-demand filling ampoule. The substrate processing apparatus 100B in FIG. 1B is the same as the substrate processing apparatus 100 in FIG. 1A. The substrate processing apparatus 100B includes an additional valve 140 connected by a flow path 142. In the mounting embodiment of the substrate processing apparatus 100B shown in FIG. 1B, the flow path 142 and the valve 140 may provide an additional path for the carrier gas to flow through the valve 126. In certain implementations, the flow path through the valve 124 may be used to flow carrier gas during the operation of the substrate processing apparatus, and the flow path through the valve 140 may carry the carrier gas during maintenance of the substrate processing apparatus. May be used to shed.

FIG. 2 is a process flow diagram detailing an exemplary deposition process operation utilizing an on-demand filling ampoule. FIG. 2 details the ampoule filling operation and the timetable of the ampoule filling operation for the remaining operations of the process operation. In FIG. 2, the ampoule filling operation is shown on the right side of the figure and the other deposition process operations are shown on the left side. The process operation detailed in FIG. 2 may be an ALD processing operation or another type of substrate processing operation using a liquid reactant, such as chemical vapor deposition or etching operations including atomic layer etching. ..

At operation 202, the process operation is set up. Operation 202 includes a variety of tasks involved in setting up processing operations, such as general equipment checks, pin lifting, board loading, and operation programming.

After operation 202, operation 204 begins filling the ampoule. Operation 204 begins the initial filling of the ampoule. At the beginning of operation 204, the ampoule may be completely empty.

A temperature soak is performed at step 206 while the ampoules are being filled. The temperature soak may heat the precursor to the desired temperature (eg, between about 20-100 ° C. for a particular precursor used in ALD) and / or the temperature soak before deposition. The substrate may be heated. The temperature at which the precursor is heated may depend on the chemical composition of the precursor. In certain implementations, the precursor and / or substrate may be heated from room temperature to a higher temperature (eg, between about 25 and 45 ° C.). Other mountings may heat the precursor and / or substrate to a temperature between room temperature and about 25-60 ° C., yet other mountings may heat the precursor and / or substrate to a higher temperature than room temperature. It may be heated to (eg, up to about 80 ° C.). The thermal soak of the precursor when the precursor is filled may provide the precursor at the optimum temperature for vaporizing the desired amount. In addition, thermal soaking the precursor during ampoule filling may allow for greater substrate throughput as the two setup operations are performed simultaneously. Finally, filling the ampoule during a hot soak minimizes the effect of agitation of the precursor during filling, as carrier gas is not flowed through the ampoule to carry the vaporized precursor gas. It may be suppressed.

After the temperature soak of step 206 is complete, but before the line is charged at step 210, the ampoule filling is stopped at step 208. Ampoule filling may be discontinued under a variety of different conditions. Such conditions will be described in more detail with respect to FIG. In certain implementations, the ampoule may initially be at full level. In such implementations, the initial filling of ampoules may be omitted.

In operation 210, line charging is performed. The line charge is the flow of gas through the flow path of the substrate processing apparatus before feeding the precursor gas into the processing chamber. That is, the line leading to the chamber is charged, eliminating delays when the valve to the chamber is opened. For example, in certain embodiments, the carrier gas may flow through various channels to carry the precursor gas from the ampoule. Pre-flow of such precursor gas can help make the initial cycle of deposition more stable. This is done by precharging the flow path with the precursor gas used in the deposition so that the precursor gas reaches the processing chamber more quickly when the valve leading to the processing chamber is opened.

After the line charge in operation 210, deposition is performed in operation 212. The deposition performed in operation 212 may be one cycle of deposition, or may be several cycles of deposition, such as those performed during ALD.

After the deposition is carried out in operation 212, secondary ampoule filling is started in operation 216. Secondary ampoule filling in step 216 may be designed to fill the ampoule again to full level, or to fill the ampoule until another filling stop condition is met. When the filling stop condition is satisfied in operation 220, the second ampoule filling operation is stopped. Secondary ampoule filling allows the ampoule to maintain a relatively consistent head volume, resulting in higher wafer uniformity. During secondary ampoule filling, the ampoule may be heated to achieve a more consistent precursor temperature. In certain implementations, such as those described with reference to FIG. 2, the secondary ampoule filling is timed so that the agitation of the precursor resulting from the filling occurs during a period that has minimal effect on substrate processing. To. In some implementations, such a period may be a period during which no deposition occurs. In other embodiments, deposition may occur during periods when the vapor pressure of the precursor is below a certain threshold. Precursors with lower vapor pressures may be less susceptible to agitation due to replenishment and may therefore be more suitable for replenishment during deposition. For example, a precursor having a vapor pressure of less than about 1 Torr is a precursor that can be replenished during deposition. In certain implementations, the amount of precursor replenished during any single secondary ampoule filling operation is less than about 40% of the total ampoule volume, eg less than about 20% of the total ampoule volume, less than about 10%. , Less than about 5%, or less than about 2%.

Other process operations such as exhaust to base pressure and wafer indexing are also performed during the secondary ampoule filling. At operation 214, exhaust to the base pressure is performed. Exhausting to base pressure is the process of exhausting the chamber to the base pressure provided by the vacuum pump. This process removes residual material from the substrate processing chamber, for example through the vacuum port of the processing chamber.

At operation 218, wafer indexing is performed. Wafer indexing is the transfer and orientation of the substrate to additional process stations within the substrate processing chamber. Wafer indexing may be performed when the substrate processing chamber has multiple processing stations. Wafer indexing may not be performed in certain implementations, such as those for processing chambers that have only one processing station.

After wafer indexing in operation 218, the process may return to operation 212 and re-deposit until all necessary deposits have been made. Ampoule filling may be performed between each deposition.

FIG. 3 is a process flow diagram detailing an algorithm for controlling an exemplary on-demand filling ampoule. At operation 302, a command is given to perform precursor filling. The operation 302 may correspond to the operation 204 or 216 in FIG. The command for performing precursor filling may be given by the logic contained in the controller. The controller may be a controller used to control other deposition operations of the substrate processing apparatus, or it may be a separate controller dedicated to the control operations associated with the ampoule.

Given a command to perform precursor filling, the precursor begins to fill the ampoule. While the precursor filling is taking place, the controller may simultaneously perform operations 304, 306 and 308.

At operation 304, the controller checks if the ampoule full sensor is on. Ampoules may include level sensors such as discrete level sensors. Level sensors may be configured to detect specific precursor levels within the ampoule, such as full levels. Such precursor full levels may be calculated to obtain ampoules with optimal head volume. In certain implementations, the full level may be a threshold volume calculated to reach the optimum head volume. Such a threshold volume may be, for example, about 70-80% of the total volume of the ampoule, eg, about 75% of the total volume of the ampoule, the volume of the precursor. In other embodiments, the threshold volume may be in a range of volumes. In such an implementation, the precursor volume within that range may satisfy the full condition. In certain such implementations, subsequent secondary ampoule filling may be adjusted based on the detected precursor volume. For example, the stopping conditions for subsequent secondary ampoule filling may be adjusted.

In certain other implementations, the level sensor may report low levels. Low levels may be reported when the volume of precursor in the ampoule is less than the threshold percentage of ampoule volume. In such an implementation, the threshold volume may be less than about 50% of the ampoule volume. In such an implementation, the board processing device may stop processing the board when the level sensor reports a low level. In certain implementations, the substrate processing apparatus may complete all deposition cycles in the sequence of substrate deposition operations, after which the substrate processing may be stopped and ampoules refilled.

At operation 306, the controller checks if the ampoule filling timer has expired. The ampoule filling timer may be a timer set in the controller so that the ampoule filling process is performed only for a duration close to the duration required to fill the ampoule to full level. In certain implementations, the fill timer may have a duration slightly longer than the time required to fill the ampoule to full level in order to introduce some factor of safety. In other implementations, the ampoule filling timer may be much longer than the duration required to fill the ampoule. In such implementations, the fill timer duration may be selected to give the best opportunity to fill the ampoule to full level, and the ampoule full sensor as the main mechanism to prevent overfilling of the ampoule. You may rely on.

In certain implementations, the filling timers for initial filling and secondary filling may be different. In such an implementation, the initial filling timer may be, for example, 45 seconds or less, and the secondary filling timer may be, for example, 5 to 10 seconds. In other implementations, the filling timer may be adjusted based on the correction factor. The correction coefficient may be a coefficient for estimating the pressure difference between the replenishment lines of various different substrate processing devices. Therefore, a substrate processing device with a high replenishment line pressure may have a low correction factor that makes the filling timer shorter, while a substrate processing device with a low replenishment line pressure has a higher correction that makes the filling timer longer. It may have a coefficient. The refill line pressure may be varied based on the inherent characteristics of the substrate processing equipment or based on the operator's experience with the particular equipment. For example, the replenishment line pressure may be reduced if further reduction in precursor agitation is desired. In addition, the correction factor may allow any variation upstream of the pressure indicator inside the precursor replenishment line. Factors that can affect line pressure include the diameter and length of the refill line.

In certain implementations, the secondary filling timer may be constant regardless of the conditions detected during initial filling. In other embodiments, the secondary filling timer may be adjusted according to the conditions detected during the initial filling. For example, if the ampoule full sensor is not detected during initial filling, the duration of the secondary filling timer will be extended in anticipation of a higher probability that the ampoule will reach full levels during the secondary filling operation. May be done.

At operation 308, the controller checks if an explicit stop command has been invoked. In certain implementations, an explicit stop command to stop filling the ampoule may be programmed into the controller prior to performing a particular deposition step, such a step being performed, for example, during that step. Simultaneous ampoule filling can result in unacceptable agitation of the precursor, a deposition step. An explicit stop command can be an additional safety measure against failure of the ampoule full sensor and / or ampoule filling timer. Further, in certain implementations, the fill timer and / or full volume may be user-defined parameters. Explicit stop commands can prevent user-defined errors in parameters from affecting the quality of board processing.

When the control device detects the determination result "yes" from any of the operations 304, 306, or 308, the controller proceeds to the operation 310 and the precursor filling is stopped. If no determination result "yes" is detected in any of operations 304, 306, or 308, the controller may return to operation 302 to continue the implementation of precursor filling.

FIG. 4A shows one step in substrate processing for the exemplary substrate processing apparatus of FIG. 1A. The steps shown in FIG. 4A correspond to operation 204 in FIG. The substrate processing apparatus 100 shown in FIGS. 4A and 4B to 4C may be a substrate processing apparatus having the same configuration as that of the substrate processing apparatus shown in FIG. 1A. In FIGS. 4A-D, the solid line represents the flow path with no flow, the dotted line represents the flow path with the flow of the liquid precursor, the broken line represents the flow path with the flow of the carrier gas, and the alternate long and short dash line represents the flow path. , Represents a flow path with a flow of precursor gas.

In FIG. 4A, the ampoule 102 is initially filled. In the embodiment shown in FIG. 4A, all valves except the valve 114 are closed. The valve 114 is open to allow the flow of precursors into the ampoule 102. In other embodiments, the valves 108, 124, 126, and 128 may be open. In FIG. 4A, the ampoule 102 may be heated to bring the precursor to a desired temperature so as to facilitate vaporization of the precursor.

FIG. 4B shows another step in substrate processing for the exemplary substrate processing apparatus of FIG. 1A. The steps shown in FIG. 4B correspond to operation 210 in FIG. In FIG. 4B, the valve 114 is closed because at least one of the conditions required to stop the filling of the precursor has been induced.

In FIG. 4B, valves 108, 110, 116, and 126 are open, allowing the substrate processing apparatus to precharge the flow of precursor gas into channels 118 and 136. In FIG. 4B, since the shower head 122 is not ready to receive the flow of precursor gas, the precursor gas flowing through the channels 118 and 136 then flows through the channels 138 to the dump source. A continuous stream of precursor gas is supplied through channels 118 and 136 to ensure that the precursor gas is ready to be fed when the shower head 122 is ready to receive the precursor gas.

In FIG. 4B, the precursor gas is a mixture of carrier gas and vaporized precursor. The carrier gas flows through the flow paths 106 and 134 having the open valves 108 and 110, respectively, and enters the ampoule 102. The ampoule contains the vaporized precursor, and the carrier gas mixes with the vaporized precursor to produce a precursor gas. The precursor gas then flows out of the ampoule 102 through the flow path 136.

FIG. 4C shows a further step in substrate processing for the exemplary substrate processing apparatus of FIG. 1A. The steps shown in FIG. 4C correspond to operation 212 in FIG. In FIG. 4C, the valve 128 is closed here, but here the valve 130 is open, allowing the precursor gas to flow through the shower head 122 into the processing chamber 132.

FIG. 4D shows a further step in substrate processing for the exemplary substrate processing apparatus of FIG. 1A. The steps shown in FIG. 4D correspond to operation 214 in FIG. In FIG. 4D, the valves 110 and 116 are closed, but the valves 124 are open. Therefore, there is no flow of precursor gas through the flow paths, but carrier gas may flow through the flow paths 106 and 118. Further, here the valve 130 is closed to prevent the flow of carrier gas into the shower head 122. Here the valve 128 is open to allow the flow of carrier gas to the dump source.

In FIG. 4D, the valve 114 is open, allowing the ampoule 102 to be replenished with precursors. The replenishment shown in FIG. 4D is a secondary precursor replenishment.

FIG. 5 is a comparison of substrate processing results relating to substrate processing with on-demand filling and substrate processing without on-demand filling. In FIG. 5, the plot represented by the “X” mark is the deposition process using on-demand filling, and the plot represented by the square mark is the deposition process using on-demand filling.

As shown in FIG. 5, the deposition process utilizing on-demand filling has a more consistent thickness, and the deposition process not utilizing on-demand filling has a greater variation in thickness. Sedimentation processes with on-demand filling show higher process uniformity than deposition processes without on-demand filling.

(Sensor level)
In certain embodiments, additional protection is provided to address possible equipment problems, such as malfunction of the ampoule liquid level sensor. As mentioned above, the ampoule may have one or more sensors. In some embodiments, they detect one or more levels of liquid in the ampoule. In certain embodiments, only one sensor detects two or more levels, and in a further embodiment, only one sensor detects three or more levels. FIG. 6 shows an embodiment in which the ampoule 601 has one or more sensors configured to detect three sensor levels: full sensor level 603, low sensor level 605, and depletion sensor level 607. ..

In certain embodiments, the full sensor level is the ampoule volume between about 70% and 90% of the total ampoule filling volume. In certain embodiments, the low sensor level is between about 40% and 60% of the total filling volume of the ampoule. In certain embodiments, the depletion sensor level is set to about 10% to 30% of the total filling volume of the ampoule. In one example, the full level sensor is set to about 73% of the total ampoule volume, the low level sensor is set to about 48% of the ampoule volume, and the depletion level sensor is set to about 12% of the total ampoule volume. .. The total ampoule volume may be about 330 cubic inches. As a further example, the ampoule volume may be between about 100 and 1000 cubic inches, depending on the reaction chamber size and the supported process.

Various types of physical sensors may be employed to determine the internal filling level. Examples include single-point and multi-point liquid level sensors, such as those commercially available from Near Systems, Inc. In some cases, only one physical sensor can measure more than one level. In one example, the multipoint sensor is configured to measure three levels: full level, low level, and depletion level.

In some implementations, ampoule control logic employs a primary check that uses a full sensor. When the full sensor changes from an "off" state to an "on" state (which indicates that the liquid level has reached the full level), control logic commands the filling system to stop further filling of the ampoule. ..

In some implementations, ampoule control logic employs a primary check to prevent the ampoule from emptying. This check may determine that the full sensor remains "off" and has not been filled for a set number of cycles (eg, about 230 cycles for a particular ALD process). In such cases, the control logic will either (i) start the filling (assuming the deposition process can be stopped smoothly) or (ii) stop the deposition until the ampoule sensor works properly. You may instruct the system to do so. In some implementations, the number of cycles in this check is based on the expected liquid consumption level by the ALD process and the total volume of the ampoule. For example, some ampoules provide protection by automatically filling the ampoule each time a particular mass of liquid (eg, about 3-7 g of liquid) is calculated to be consumed by the ALD process.

If the sensor is faulty, one or both of the above primary checks cannot be performed. One failure mode occurs when the full sensor or associated software cannot accurately detect that the ampoule liquid has reached full levels. Additional protection may be incorporated into the ampoule control logic, as described below.

In certain embodiments, the system enters a soft shutdown when an illogical sensor read occurs, or otherwise to avoid damage to the system and / or the wafer being made. Designed or programmed to take steps. One such illogical result occurs when the multi-level sensor detects that the full sensor is "on" and the low level sensor is "off". This result suggests that the liquid has reached full levels but not depletion levels. Obviously, such a situation cannot exist.

In another embodiment, the system automatically takes other preventive steps when the lowest level sensor (eg, depletion sensor) of the multi-level sensor is "off". In various embodiments, the lowest level sensor is designed to trigger a soft shutdown when it is "off". This is because liquids below the minimum level are considered to leave the ampoule in a condition where the wafer and / or the system itself can be damaged.

(Soft shutdown)
In certain embodiments, the ALD tool or other deposition tool undergoes a "soft shutdown" when an error occurs, using the protective measures described in this section or elsewhere in this patent application. In certain embodiments, soft shutdown causes the ALD system to stop performing additional deposition steps, or other procedures normally performed during normal ALD processing. In some implementations, soft shutdown attempts to finish the current wafer processing in the chamber, remove the wafer, and put the module into OFFLINE mode. After that, no further wafers are processed until the module problem is resolved. Also, if filling is taking place, soft shutdown may stop further ampoule filling.

In certain embodiments, the soft shutdown process issues a notification to an operator or control routine within the manufacturing facility. The notification may identify the particular problem that triggered the soft shutdown. Examples of such notifications are that the depletion level sensor is in the "off" state, that the full level sensor remains "on" and the cumulative replenishment time exceeds the threshold, and that it is longer (eg, longer than the threshold). It may include that the full sensor is in the "on" state for a period of time). After receiving and reviewing such notifications, the control system and / or operator responsible for maintaining the ALD tool usually takes corrective action intended to resolve the notified problem. The operation can be restarted. For example, the operator may repair the malfunctioning sensor or manually adjust the ampoule liquid level. After taking such a corrective action, the tool may resume normal operation, such as ampoule replenishment, using the on-demand filling procedure described elsewhere herein.

(Overfill protection)
In certain implementations, the ampoule filling procedure is a problem caused by the full sensor indicating that it is not "on" when the system is operating as expected to be "on". Includes routines or other logic to deal with. As an example, a malfunctioning or malfunctioning sensor may show "off" when the liquid has actually reached the sensor's level and therefore the sensor should show "on". See sensor level 603 in FIG. To address this possible problem, the ampoule filling logic maintains a cumulative replenishment time from the end of the last round in which the ampoule was filled. For example, the cumulative timer may be reset whenever the full sensor is turned on and the liquid to the ampoule is stopped. If the cumulative replenishment time exceeds the threshold and the sensor has not yet reached the "on" state, the logic initiates a soft shutdown. That is, whenever an ampoule needs to be filled, it is assumed that the filling does not take longer than the time {T}. This time is the total time from multiple filling times (cumulative filling requests). The ampoule filling logic keeps track of the total filling time length, and if it exceeds {T}, it goes into an error state in the routine currently in progress. For example, if F ₁ = 12 seconds, F ₂ = 40 seconds, and F ₃ = 12 seconds, then (for example) T = 60 seconds, the logic goes into an error state 4 seconds before the end of F _3. ..

Thresholds for cumulative timers can be based on various parameters, typically the ampoule filling rate, ampoule volume during the subject's refilling operation, the ampoule volume (particularly the maximum volume of liquid expected to enable safe operation). ), And the rate of liquid consumption from the ampoule during the intervening ALD process step while the timer is on. It should be understood that the ALD process may be performed between the times during which each ampoule replenishment operation is performed. In certain embodiments, the timer threshold is between about 30 and 300 seconds. In certain embodiments, the timer threshold is between about 50 and 90 seconds (eg, about 60 seconds). In certain embodiments, the threshold filling time is determined based on laboratory test conditions with specific process chemical reactant consumption rates and ampoule filling rates for the manufacturing facility.

FIG. 7 is a flow chart relating to a particular implementation of overfill protection. The blocks shown in this flow diagram represent execution steps in a program or other logic for performing ampoule filling control in the deposition module. In the illustrated embodiment, the ampoule control logic is represented as a loop starting with start operation 703. During execution, at each iteration, no specific operation is performed on block 703. At each iteration, process logic determines at decision point 705 whether the full sensor is on. When on, the overfill protection portion of the routine is not performed and the process proceeds as described with respect to FIG. In the overfilled protection part of the routine, the full sensor is not on and, as shown in FIG. 7, logic provides instructions for filling the ampoule with precursors as shown in block 707. At the same time, the process resets the cycle count that may be used in depletion protection mode, as described further with respect to FIG. See block 709. As the filling progresses, the filling timer tracks the cumulative filling time from the last round when the filling timer was reset. See block 711. The ampoule filling logic then determines if the total cumulative filling time is longer than the threshold (such as 60 seconds). See decision block 713. If long, the logic puts the system in an error state and stops execution, as shown in block 715. The system may then enter a soft shutdown as described above and the process terminates as indicated by block 717. If the cumulative time recorded by the fill timer does not exceed the threshold, control logic proceeds from block 713 to subsequent decision block 719, where the system determines if deposition should be performed. If not, the routine ends smoothly at block 717. However, if logic determines that deposition should proceed, the process suspends precursor filling and at the same time suspends the timer, as shown in block 721. As mentioned above, it should be understood that during the course of the deposition process, the repetitive deposition of material on the substrate may be paused for wafer indexing, exhaust to base pressure, and other operations. Is. Each time this pause occurs, ampoule filling may be resumed and the filling timer restarted.

In the embodiment shown in FIG. 7, the full sensor remains off, so ampoule replenishment is always performed, if possible, according to the underlying on-demand filling logic, thereby risking ampoule overfilling. Remains. Returning to block 721 in process flow logic, the system begins to make deposits and then increments the cycle counter as shown in blocks 723 and 725. This will be described in more detail with reference to FIG. Process control then returns to block 703 and the full sensor is checked again.

As described, the logic shown in FIG. 7 indicates the operation of the overfill protection mode and assumes that the full sensor remains on at all times. In this state, as shown in block 711, the filling timer continues to increase and is never reset. Therefore, even if the filling timer is repeatedly paused while filling is stopped during the on-demand filling algorithm described above, the cumulative filling time is even closer to the threshold and is final, as shown in blocks 713 and 715. Induces a transition to an error state.

The protection described in this section is in the context of overfill protection when the full sensor is malfunctioning or malfunctioning, but the full sensor has not been turned "on" but is actually working properly. Protection may extend to other situations. For example, the full sensor can remain in the "off" state when the liquid has not reached the level of the full sensor due to malfunction or other problems with the delivery of the liquid to the ampoule. Examples of such problems include improper operation of the refill valve to the ampoule and slow or absent delivery of liquid from the manufacturing facility to the ampoule. In each of these cases, the fact that the full sensor remains "off" for a longer period of time, perhaps while ampoule replenishment is taking place, suggests that there is a problem, and therefore ampoule control logic has this problem. May be identified as an error and a soft shutdown may be initiated.

(Low ampoule liquid level protection)
Ampoule control logic in certain embodiments addresses the potential problem caused by liquid level sensors, which indicates that the liquid is actually "on" when it has not reached the level of the liquid level sensor. May be designed to. In such cases, the sensor should correctly indicate "off". This malfunction of the sensor may prevent the ampoule from being refilled when the liquid level drops dangerously. Primary protection against underfilling relies on the sensor indicating "off" when the liquid level drops below the sensor's read level. In certain implementations, control logic provides secondary protection by tracking the precursor cycle from the last round in which ampoule filling was performed. If the number of such cycles is greater than the number of thresholds, the system may perform a soft shutdown.

In certain embodiments, the ampoule depletion protection logic may include the following features:
-During steady-state operation, it is assumed that the ampoule is filled at least once every {N} deposition cycle.
-Control logic keeps track of the number of cycles since the last filling.
-The process module proceeds to soft shutdown when the count exceeds {N}.
-If the filling is actually performed, the count is reset to zero (0).
{N} is estimated to be 5000 cycles (this value is process specific and can be adjusted based on the actual tool).

FIG. 8, which is a flow diagram of FIG. 7, shows a depletion protection mode constructed on the on-demand filling ampoule logic. As mentioned above, the iterative process determines if the full sensor is on, as indicated by decision block 705. In this example, the full sensor is assumed to be malfunctioning because it indicates that it is on when it should actually be off. As shown, the ampoule filling logic stops the current precursor filling when the logic determines that the full sensor is on at block 705. See block 801. At the same time, logic resets the filling timer associated with the overfill protection routine described with respect to FIG. After stopping precursor filling at block 801 the process then determines if it is time to make a deposit, as shown in determination block 719 described above. Assuming that deposition should take place, process logic instructs the system to do the deposition as shown in block 721. As the deposition progresses, each cycle is counted, or at least the cycles in which the precursor is consumed. See block 723. When the cycle count increments over one or more sequential deposition cycles, which may be paused periodically for wafer indexing, etc., the cycle counter is indicated by decision block 725. Compare the current cycle count with some threshold cycle count. As described, the cycle count is determined to prevent the ampoule from being dangerously underfilled. When the cycle count eventually exceeds the threshold (perhaps because the full sensor is failing or malfunctioning), process control is advanced to block 715, where it puts the system in an error state and ends routine execution. However, it typically involves a soft shutdown. The process loops back to repeating blocks 703 and 705 until the cycle count exceeds the threshold, and the full sensor is checked again. Again, assuming the full sensor remains on, the process proceeds through the branch containing block 801 and deposition continues without additional ampoule filling.

The cycle threshold chosen is an ampoule of a certain amount of precursor that will deplete the liquid level in the ampoule to a point where it adversely affects the process (eg, the properties of the deposited coating are adversely affected). It may be based on the number of cycles determined to be consumed from. The threshold may be determined based on the size of the ampoule, and thus the responsiveness of the ampoule to changes in levels during replenishment, and the consumption of liquid precursors per ALD cycle. In certain embodiments, the cycle threshold is between about 3000-8000 cycles. In certain embodiments, the cycle threshold is between about 4000-6000 cycles (eg, about 5000 cycles). The number of cycles may correspond to a particular number of wafers to be processed (eg, between about 50 and 100 wafers).

In certain ALD processes, not all cycles consume liquid precursors from ampoules. For example, one or more ALD cycles during a particular deposition process do not deliberately withdraw precursors from ampoules. Such a "doseless" cycle may be used to check the proper functioning of the process and the occurrence of notable particulates or other problems. During such a cycle, the liquid level in the ampoule is not reduced. Therefore, in such an implementation, the ampoule control logic recognizes the cycle as a cycle that does not consume the liquid precursor from the ampoule and therefore does not count it into the number of cycles compared to the error condition threshold.

(Control device configuration)
In some implementations, the controller is part of a system that may be part of the examples described herein. The control device may include "logic" such as ampoule filling logic, or other control logic discussed herein. Such a system may include semiconductor processing equipment including processing tools, chambers, processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, ampoules, etc.). These systems may be integrated with electronic circuits to control their operation before, during, and after processing the semiconductor wafer or substrate. Electronic circuits may be referred to as "control devices", which may control various components or subparts of the system. The control device may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system, such processes: delivery of processing gas, temperature setting ( For example heating and / or cooling), pressure setting, vacuum setting, output setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid feeding setting, position and operation setting, ampoules. Replenishment, transfer of wafers in and out of the tool, and transfer of wafers in and out of other transfer tools and / or load locks connected or interfaced to a particular system.

Broadly speaking, the control device is, for example, various integrated circuits, logic, memory, which enable instruction reception, instruction transmission, operation control, cleaning operation, and endpoint measurement. And / or may be defined as an electronic circuit with software. An integrated circuit is a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or It may include one or more microprocessors that execute program instructions (eg, software). Program instructions may be instructions that are communicated to the controller in the form of various individual settings (or program files) to perform a particular process on, for, or for a system on a semiconductor wafer. Define the operating parameters of. In some implementations, the operating parameters are one or more processes during the manufacture of one or more layers of wafers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies. It may be part of a recipe defined by a process engineer to accomplish the step.

In some implementations, the control unit may be part of a computer or may be coupled to a computer, which is integrated with the system, coupled to the system, or otherwise networked to the system. It is made or consists of a combination thereof. For example, the controller may be a "cloud" or all or part of a factory host computer system, allowing remote access to wafer processing. Computers may allow remote access to the system, monitor the current progress of manufacturing operations, inspect the history of past manufacturing operations, inspect trends or performance criteria from multiple manufacturing operations, and currently Change processing parameters, set processing steps to follow the current processing, or start a new process. In some examples, a remote computer (eg, a server) can provide process recipes to the system over a local network or a network that may include the Internet. The remote computer may include a user interface, which allows input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controls may be distributed, for example by including one or more discrete controls, which are networked together and are common to the processes and controls described herein. Collaborate towards the purpose of. An example of a distributed controller for such a purpose is one or in a chamber that communicates with one or more remotely located integrated circuits (eg, at the platform level or as part of a remote computer). Multiple integrated circuits that combine to control the process in the chamber.

Exemplary systems include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition. (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE) chamber or module, ion injection chamber or module, track chamber or module, and , May include any other semiconductor processing system that may be associated with or used in the fabrication and / or production of semiconductor wafers.

As mentioned above, depending on the process steps to be taken by the tool, the controller can be another tool circuit or module, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, all factories. With a tool located within, a main computer, another controller, or one or more of the tools used in material transport that direct a container of wafers to / from a tool location within a semiconductor manufacturing plant and / or a loading port. You may communicate.
The present invention can also be realized, for example, in the following aspects.
Application example 1:
A method for filling ampoules in substrate processing equipment.
(A) A step of determining whether the ampoule filling start condition for filling the ampoule with the liquid precursor is satisfied, and
(B) A step of filling the ampoule with a precursor, wherein the ampoule is filled with the precursor at the same time as at least one other substrate processing operation.
(C) A step of reading the sensor level in the ampoule, indicating that the filling is not yet complete.
(D) A step of determining whether the secondary filling stop condition is satisfied, and
(E) A method including a step of stopping filling of the precursor into the ampoule in response to a determination that the secondary filling stop condition is satisfied.
Application example 2:
This is the method of application example 1.
In addition, it comprises the step of maintaining a cumulative filling time starting at the end of the last round in which the ampoule received the precursor.
A method comprising determining that the secondary filling stop condition exceeds the threshold for the cumulative filling time.
Application example 3:
This is the method of application example 2.
A method in which the cumulative filling time is temporarily stopped when ampoule replenishment is temporarily stopped and deposition begins one or more times, but the cumulative filling time is restarted when filling is resumed. ..
Application example 4:
This is the method of application example 1.
A method in which the threshold is between about 50 seconds and 90 seconds.
Application example 5:
This is the method of application example 1.
A method further comprising a step of initiating a soft shutdown when the filling is stopped in step (e).
Application example 6:
This is the method of application example 1.
A method in which the sensor that produces the sensor level in the ampoule is malfunctioning.
Application example 7:
This is the method of application example 1.
A method in which a system that provides the liquid precursor to the ampoule is malfunctioning.
Application example 8:
This is the method of application example 1.
At a stage where the agitation of the liquid precursor caused by filling the ampoule with the precursor has minimal effect on the consistency of the substrate processed by the substrate processing apparatus. A method in which the ampoule filling start condition includes a determination that the ampoule is or is about to arrive.
Application example 9:
This is the method of application example 1.
A method comprising determining that the ampoule filling start condition completes a sequence of deposition operations on a substrate included within the substrate processing apparatus.
Application example 10:
The method of application example 9
A method, wherein said sequence of deposition operations is a deposition operation associated with atomic layer deposition.
Application example 11:
This is the method of application example 1.
A method, wherein the ampoule filling start condition comprises determining that the volume of the precursor is less than the threshold volume.
Application example 12:
This is the method of application example 1.
A method comprising determining that the ampoule filling start condition has been set up for a deposition operation.
Application example 13:
This is the method of application example 1.
A method in which the at least one other substrate processing operation performed at the same time as filling the ampoule comprises a wafer indexing operation.
Application example 14:
This is the method of application example 1.
A method in which the at least one other substrate processing operation performed at the same time as filling the ampoule comprises a temperature soak of the precursor and / or substrate.
Application example 15:
This is the method of application example 1.
A method in which the at least one other substrate processing operation performed at the same time as filling the ampoule comprises an exhaust operation to the base pressure.
Application example 16:
A method for controlling the filling of ampoules in a substrate processing apparatus.
(A) A step of starting a counter for the number of deposition cycles in which the precursor stored in the liquid state in the ampoule is fed to the reaction chamber of the substrate processing apparatus.
(B) A step of determining whether the ampoule filling start condition is satisfied, and
(C) A step of reading the sensor level in the ampoule, indicating that the ampoule is full enough that the liquid precursor should not be provided to the ampoule.
(D) A step of determining whether the number of deposition cycles counted by the counter exceeds the threshold value, and
(E) A step of stopping the deposition cycle in response to the determination that the number of deposition cycles counted by the counter exceeds the threshold.
How to include.
Application example 17:
The method of application example 16
A method in which the threshold comprises a deposition cycle of about 3000-6000.
Application example 18:
The method of application example 16
The step of starting the counter in step (a) is performed when the liquid precursor is fed to the ampoule, and the counter counts until the liquid precursor is fed to the ampoule again. How to continue.
Application example 19:
The method of application example 16
A method further comprising the step of initiating a soft shutdown when the deposition cycle is aborted in step (e).
Application example 20:
The method of application example 16
A method in which the sensor that produces the sensor level in the ampoule is malfunctioning.
Application example 21:
The method of application example 16
The substrate processing apparatus is at a stage where the agitation of the liquid precursor caused by filling the ampoule with the precursor has a minimal effect on the consistency of the substrate processed by the substrate processing apparatus. A method in which the ampoule filling start condition includes a determination that the ampoule is or is about to arrive.
Application 22:
The method of application example 16
A method comprising determining that the ampoule filling start condition completes a sequence of deposition operations on a substrate included within the substrate processing apparatus.
Application example 23:
The method of application example 16
A method, wherein said sequence of deposition operations is a deposition operation associated with atomic layer deposition.
Application example 24:
The method of application example 16
A method comprising determining that the ampoule filling start condition has been set up for a deposition operation.
Application example 25:
The method of application example 16
The ampoule filling condition includes one other substrate processing operation performed at the same time as the filling of the ampoule, and the substrate processing operation is performed on a wafer indexing operation, a temperature soak of the precursor and / or the substrate, and a base pressure. A method selected from the group consisting of exhaust operations.
Application example 26:
Precursor replenishment system
Ampoules configured to fluidly connect to the precursor feeding system and precursor source and to accommodate liquid precursors,
With one or more control devices,
The one or more control devices
(A) A counter for the number of deposition cycles in which the precursor stored in the liquid state in the ampoule is fed to the reaction chamber of the substrate processing apparatus is started.
(B) Judging whether the ampoule filling start condition is satisfied,
(C) Read the sensor level in the ampoule, indicating that the ampoule is full enough that the liquid precursor should not be provided to the ampoule.
(D) Judging whether the number of deposition cycles counted by the counter exceeds the threshold value,
(E) The deposition cycle is stopped in response to the determination that the number of deposition cycles counted by the counter exceeds the threshold.
Precursor replenishment system configured as.
Application 27:
The precursor replenishment system of Application Example 26.
A precursor replenishment system, wherein the threshold comprises a deposition cycle of about 3000-6000.
Application example 28:
The precursor replenishment system of Application Example 26.
The one or more controllers further activate the counter in step (a) when the liquid precursor is fed to the ampoule until the liquid precursor is fed back to the ampoule. A precursor replenishment system configured to keep counting.
Application 29:
The precursor replenishment system of Application Example 26.
A precursor replenishment system in which the one or more controls are further configured to initiate a soft shutdown when the deposition cycle is aborted in step (e).
Application example 30:
The precursor replenishment system of Application Example 26.
At a stage where the agitation of the liquid precursor caused by filling the ampoule with the precursor has minimal effect on the consistency of the substrate processed by the substrate processing apparatus. A precursor replenishment system, wherein the ampoule filling start condition includes a determination that the ampoule is or is about to arrive.
Application example 31:
The precursor replenishment system of Application Example 26.
A precursor replenishment system comprising determining that the ampoule filling start condition completes a sequence of deposition operations on a substrate contained within the substrate processing apparatus.
Application example 32:
The precursor replenishment system of Application Example 26.
The ampoule filling condition includes one other substrate processing operation performed at the same time as the filling of the ampoule, and the substrate processing operation includes a wafer indexing operation, a temperature soak of the precursor and / or the substrate, and a base pressure. A precursor replenishment system selected from the group consisting of exhaust operations to.
Application 33:
The substrate processing apparatus of Application Example 26.
further,
With the deposition chamber,
A substrate processing station housed in the deposition chamber.
The substrate processing station includes a substrate holder configured to receive the substrate, and the precursor feeding system is configured to deliver the precursor during processing of the substrate received by the substrate processing station. Substrate processing equipment.
Application example 34:
Ampoules configured to fluidly connect to the precursor feeding system and precursor source and to accommodate liquid precursors,
A precursor replenishment system comprising one or more controllers.
The one or more control devices
(A) It is determined whether the ampoule filling start condition for filling the ampoule with the liquid precursor is satisfied.
(B) At the same time as at least one other substrate processing operation, the ampoule is filled with the precursor.
(C) Read the sensor level in the ampoule, indicating that the filling is not yet complete.
(D) Judging whether the secondary filling stop condition is satisfied,
(E) In response to the determination that the secondary filling stop condition is satisfied, the filling of the precursor into the ampoule is stopped.
Precursor replenishment system configured as.
Application example 35:
The substrate processing apparatus of Application Example 34.
The one or more controllers are further configured to maintain a cumulative filling time beginning at the end of the last round in which the ampoule received the precursor.
A substrate processing apparatus including the determination that the secondary filling stop condition exceeds the threshold value of the cumulative filling time.
Application example 36:
Claim that the one or more controllers are further configured such that the cumulative filling time is temporarily stopped at one or more times when ampoule replenishment is temporarily stopped and deposition begins. 35 substrate processing devices.
Application example 37:
The substrate processing apparatus of Application Example 34.
A substrate processing apparatus in which the threshold value is between about 50 seconds and 90 seconds.
Application example 38:
The substrate processing apparatus of Application Example 34.
A substrate processing apparatus in which the one or more control devices are further configured to initiate a soft shutdown when the filling is aborted in step (e).
Application 39:
The substrate processing apparatus of Application Example 34.
The substrate processing apparatus is in a stage where the agitation of the liquid precursor caused by filling the ampoule with the precursor has minimal effect on the consistency of the substrate processed by the substrate processing apparatus. The substrate processing apparatus, wherein the ampoule filling start condition includes the determination that the ampoule is or is about to arrive.
Application example 40:
The substrate processing apparatus of Application Example 34.
A substrate processing apparatus, wherein the ampoule filling start condition includes a determination that the volume of the precursor is less than the threshold volume.
Application example 41:
The substrate processing apparatus of Application Example 34.
A substrate processing apparatus in which the at least one other substrate processing operation performed at the same time as filling the ampoule comprises a temperature soak of the precursor and / or the substrate.
Application example 42:
The substrate processing apparatus of Application Example 34.
further,
With the deposition chamber,
A substrate processing station housed in the deposition chamber.
The substrate processing station includes a substrate holder configured to receive the substrate, and the precursor feeding system is configured to deliver the precursor during processing of the substrate received by the substrate processing station. Be done
The substrate processing apparatus according to claim 34.

Claims (40)

A method for filling ampoules in substrate processing equipment.
(A) A step of determining whether the ampoule filling start condition for filling the ampoule with the liquid precursor is satisfied, and
(B) A step of filling the ampoule with a precursor, wherein the ampoule is filled with the precursor at the same time as at least one other substrate processing operation.
(C) a step of the sensor levels in the ampoule to determine whether indicating that the ampule is not full, when the sensor level in the ampoule indicates that the ampoule is full, primary filling stop condition And the steps that are met
(D) A step of maintaining the cumulative filling time of the ampoule filling, wherein the cumulative filling time of the ampoule filling is the precursor after the cumulative filling time of the ampoule filling is finally reset. The cumulative filling time of the ampoule filling is reset when the body is all the time flowing into the ampoule and the sensor level in the ampoule indicates that the ampoule is full.
( E ) A step of determining whether the secondary filling stop condition is satisfied , wherein the secondary filling stop condition includes a determination that the cumulative filling time of filling exceeds a threshold value .
( F ) The said to the ampoule in response to the determination that the secondary filling stop condition is met and that the sensor level in the ampoule indicates that the ampoule is not full. A method comprising a step of discontinuing filling of the precursor. The method according to claim 1 .
A method in which the cumulative filling time is temporarily stopped when ampoule replenishment is temporarily stopped and deposition begins one or more times, but the cumulative filling time is restarted when filling is resumed. .. The method according to claim 1 .
A method in which the threshold is between about 50 seconds and 90 seconds. The method according to claim 1.
A method further comprising a step of initiating a soft shutdown when the filling is stopped in step (e). The method according to claim 1.
A method in which the sensor that produces the sensor level in the ampoule is malfunctioning. The method according to claim 1.
A method in which a system that provides the liquid precursor to the ampoule is malfunctioning. The method according to claim 1.
At a stage where the agitation of the liquid precursor caused by filling the ampoule with the precursor has minimal effect on the consistency of the substrate processed by the substrate processing apparatus. A method in which the ampoule filling start condition includes a determination that the ampoule is or is about to arrive. The method according to claim 1.
A method comprising determining that the ampoule filling start condition completes a sequence of deposition operations on a substrate included within the substrate processing apparatus. The method according to claim 8.
A method, wherein said sequence of deposition operations is a deposition operation associated with atomic layer deposition. The method according to claim 1.
A method, wherein the ampoule filling start condition comprises determining that the volume of the precursor is less than the threshold volume. The method according to claim 1.
A method comprising determining that the ampoule filling start condition has been set up for a deposition operation. The method according to claim 1.
A method in which the at least one other substrate processing operation performed at the same time as filling the ampoule comprises a wafer indexing operation. The method according to claim 1.
A method in which the at least one other substrate processing operation performed at the same time as filling the ampoule comprises a temperature soak of the precursor and / or substrate. The method according to claim 1.
A method in which the at least one other substrate processing operation performed at the same time as filling the ampoule comprises an exhaust operation to the base pressure. A method for controlling the filling of ampoules in a substrate processing apparatus.
(A) A step of starting a counter for the number of deposition cycles in which the precursor stored in the liquid state in the ampoule is fed to the reaction chamber of the substrate processing apparatus.
(B) A step of determining whether the ampoule filling start condition is satisfied, and
(C) A step of reading the sensor level in the ampoule, indicating that the ampoule is full so that the liquid precursor should not be provided to the ampoule.
(D) A step of determining whether the number of deposition cycles counted by the counter exceeds the threshold value, and
(E) A method including a step of discontinuing the deposition cycle in response to a determination that the number of deposition cycles counted by the counter exceeds a threshold. The method according to claim 15.
A method in which the threshold comprises a deposition cycle of about 3000-6000. The method according to claim 15.
The step of starting the counter in step (a) is performed when the liquid precursor is fed to the ampoule, and the counter counts until the liquid precursor is fed to the ampoule again. How to continue. The method according to claim 15.
A method further comprising the step of initiating a soft shutdown when the deposition cycle is aborted in step (e). The method according to claim 15.
A method in which the sensor that produces the sensor level in the ampoule is malfunctioning. The method according to claim 15.
The substrate processing apparatus is at a stage where the agitation of the liquid precursor caused by filling the ampoule with the precursor has a minimal effect on the consistency of the substrate processed by the substrate processing apparatus. A method in which the ampoule filling start condition includes a determination that the ampoule is, or is about to arrive. The method according to claim 15.
A method comprising determining that the ampoule filling start condition completes a sequence of deposition operations on a substrate included within the substrate processing apparatus. The method according to claim 21 .
A method in which the sequence of deposition operations is the deposition operation associated with atomic layer deposition. The method according to claim 15.
A method comprising determining that the ampoule filling start condition has been set up for a deposition operation. The method according to claim 15.
The ampoule filling start condition includes one other substrate processing operation performed at the same time as the ampoule filling, and the substrate processing operation includes a wafer indexing operation, a temperature soak of the precursor and / or substrate, and a base pressure. A method selected from the group consisting of exhaust operations to. Precursor replenishment system
Ampoules configured to fluidly connect to the precursor feeding system and precursor source and to accommodate liquid precursors,
With one or more control devices,
The one or more control devices
(A) A counter for the number of deposition cycles in which the precursor stored in the liquid state in the ampoule is fed to the reaction chamber of the substrate processing apparatus is started.
(B) Judging whether the ampoule filling start condition is satisfied,
(C) Read the sensor level in the ampoule, indicating that the ampoule is full enough that the liquid precursor should not be provided to the ampoule.
(D) Judging whether the number of deposition cycles counted by the counter exceeds the threshold value,
(E) A precursor replenishment system configured to abort the deposition cycle in response to a determination that the number of deposition cycles counted by the counter exceeds a threshold. 25. The precursor replenishment system according to claim 25.
A precursor replenishment system, wherein the threshold comprises a deposition cycle of about 3000-6000. 25. The precursor replenishment system according to claim 25.
The one or more controllers further activate the counter in step (a) when the liquid precursor is fed to the ampoule until the liquid precursor is fed back to the ampoule. A precursor replenishment system configured to keep counting. 25. The precursor replenishment system according to claim 25.
A precursor replenishment system in which the one or more controls are further configured to initiate a soft shutdown when the deposition cycle is aborted in step (e). 25. The precursor replenishment system according to claim 25.
At a stage where the agitation of the liquid precursor caused by filling the ampoule with the precursor has minimal effect on the consistency of the substrate processed by the substrate processing apparatus. A precursor replenishment system, wherein the ampoule filling start condition includes a determination that the ampoule is or is about to arrive. 25. The precursor replenishment system according to claim 25.
A precursor replenishment system comprising determining that the ampoule filling start condition completes a sequence of deposition operations on a substrate contained within the substrate processing apparatus. 25. The precursor replenishment system according to claim 25.
The ampoule filling start condition includes one other substrate processing operation performed at the same time as the ampoule filling, and the substrate processing operation includes a wafer indexing operation, a temperature soak of the precursor and / or substrate, and a base pressure. A precursor replenishment system selected from the group consisting of exhaust operations to. 25. The precursor replenishment system according to claim 25.
further,
With the deposition chamber,
A substrate processing station housed in the deposition chamber.
The substrate processing station includes a substrate holder configured to receive the substrate, and the precursor feeding system is configured to deliver the precursor during processing of the substrate received by the substrate processing station. Precursor replenishment system. Ampoules configured to fluidly connect to the precursor feeding system and precursor source and to accommodate liquid precursors,
A substrate processing device including one or more control devices.
The one or more control devices
(A) It is determined whether the ampoule filling start condition for filling the ampoule with the liquid precursor is satisfied.
(B) At the same time as at least one other substrate processing operation, the ampoule is filled with the precursor.
(C) a process sensor level in the ampoule to determine whether indicating that the ampule is not full, when the sensor level in the ampoule indicates that the ampoule is full, primary filling stop condition Is satisfied, process ,
(D) A process for maintaining the cumulative filling time of the ampoule filling, wherein the cumulative filling time of the ampoule filling is the precursor after the cumulative filling time of the ampoule filling is finally reset. If the sensor level in the ampoule indicates that the ampoule is full, then the cumulative filling time of the ampoule filling is reset, the process is performed.
( E ) A process for determining whether or not the secondary filling stop condition is satisfied , wherein the secondary filling stop condition includes a determination that the cumulative filling time of filling exceeds a threshold value .
( F ) The said to the ampoule in response to the determination that the secondary filling stop condition is met and that the sensor level in the ampoule indicates that the ampoule is not full. A substrate processing device configured to discontinue filling of precursors. It said one or more control devices, further claims configured such that the accumulated filling time when one or more times ampoule refill temporarily aborted by deposition begins is temporarily stopped 33. The substrate processing apparatus according to 33 . The substrate processing apparatus according to claim 33 .
A substrate processing apparatus in which the threshold value is between about 50 seconds and 90 seconds. The substrate processing apparatus according to claim 33.
A substrate processing apparatus in which the one or more control devices are further configured to initiate a soft shutdown when the filling is aborted in step (e). The substrate processing apparatus according to claim 33.
The substrate processing apparatus is in a stage where the agitation of the liquid precursor caused by filling the ampoule with the precursor has minimal effect on the consistency of the substrate processed by the substrate processing apparatus. The substrate processing apparatus, wherein the ampoule filling start condition includes the determination that the ampoule is or is about to arrive. The substrate processing apparatus according to claim 33.
A substrate processing apparatus, wherein the ampoule filling start condition includes a determination that the volume of the precursor is less than the threshold volume. The substrate processing apparatus according to claim 33.
A substrate processing apparatus in which the at least one other substrate processing operation performed at the same time as filling the ampoule comprises a temperature soak of the precursor and / or the substrate. The substrate processing apparatus according to claim 33.
further,
With the deposition chamber,
A substrate processing station housed in the deposition chamber.
The substrate processing station includes a substrate holder configured to receive the substrate, and the precursor feeding system is configured to deliver the precursor during processing of the substrate received by the substrate processing station. Substrate processing equipment.