SG10201908369VA - Negative-working photoresist compositions for laser ablation and use thereof - Google Patents

Negative-working photoresist compositions for laser ablation and use thereof

Info

Publication number
SG10201908369VA
SG10201908369VA SG10201908369VA SG10201908369VA SG 10201908369V A SG10201908369V A SG 10201908369VA SG 10201908369V A SG10201908369V A SG 10201908369VA SG 10201908369V A SG10201908369V A SG 10201908369VA
Authority
SG
Singapore
Prior art keywords
coating
pattern
cross
composition
encompasses
Prior art date
Application number
Inventor
Chunwei Chen
Weihong Liu
Pinghung Lu
Original Assignee
Az Electronic Mat Luxembourg Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Mat Luxembourg Sarl filed Critical Az Electronic Mat Luxembourg Sarl
Publication of SG10201908369VA publication Critical patent/SG10201908369VA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

NEGATIVEWORKING PHOTORESIST COMPOSITIONS FOR LASER ABLATION AND USE THEREOF A composition crosslinkable by broad band UV radiation, which after cross- linking is capable of cold ablation by a UV Excimer Laser emitting between nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm. The present invention also encompasses a process comprising steps a), b) and c) a) coating the composition of claim 1 on a substrate; b) cross-linking the entire coating by irradiation with broadband UV exposure; c) forming a pattern in the cross-linked coating by cold laser ablating with a UV excimer laser emitting between 222 nm and 308 nm. Finally, the present invention also encompasses The present invention also encompasses a process comprising steps a’), b’) c’) and d’) a) coating the composition of claim 1 on a substrate; b) cross-linking part of the coating by irradiation with broadband UV exposure through a mask; c) developing the coating with aqueous base removing the unexposed areas of the film, thereby forming a first pattern; d) forming a second pattern in the first pattern by laser cold laser ablating of the first pattern with a UV excimer laser emitting between 222 nm and 308 nm. (No suitable Figure)
SG10201908369V 2015-12-21 2016-12-20 Negative-working photoresist compositions for laser ablation and use thereof SG10201908369VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/976,498 US20170176856A1 (en) 2015-12-21 2015-12-21 Negative-working photoresist compositions for laser ablation and use thereof

Publications (1)

Publication Number Publication Date
SG10201908369VA true SG10201908369VA (en) 2019-10-30

Family

ID=57589048

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201908369V SG10201908369VA (en) 2015-12-21 2016-12-20 Negative-working photoresist compositions for laser ablation and use thereof

Country Status (11)

Country Link
US (2) US20170176856A1 (en)
EP (2) EP3394674B1 (en)
JP (2) JP6810754B2 (en)
KR (2) KR102432437B1 (en)
CN (2) CN110032042B (en)
IL (1) IL257598A (en)
PH (1) PH12018500813A1 (en)
PT (2) PT3394674T (en)
SG (1) SG10201908369VA (en)
TW (2) TWI717435B (en)
WO (1) WO2017108778A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11762294B2 (en) * 2020-08-31 2023-09-19 Rohm And Haas Electronic Materials Llc Coating composition for photoresist underlayer
CN114805684A (en) * 2021-01-29 2022-07-29 广州微纳光刻材料科技有限公司 Ternary ordered photoresist resin and chemically amplified photoresist as well as preparation and application methods thereof

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL296772A (en) 1962-03-21
GB1248036A (en) 1968-01-12 1971-09-29 Agfa Gevaert Photopolymerisation of ethylenically unsaturated organic compounds
JPS5514044B1 (en) * 1970-12-26 1980-04-14
US4252887A (en) 1979-08-14 1981-02-24 E. I. Du Pont De Nemours And Company Dimers derived from unsymmetrical 2,4,5-triphenylimidazole compounds as photoinitiators
US4311783A (en) 1979-08-14 1982-01-19 E. I. Du Pont De Nemours And Company Dimers derived from unsymmetrical 2,4,5,-triphenylimidazole compounds as photoinitiators
US4459349A (en) 1981-03-27 1984-07-10 Toyo Boseki Kabushiki Kaisha Photosensitive resin composition
US4410621A (en) 1981-04-03 1983-10-18 Toyo Boseki Kabushiki Kaisha Photosensitive resin containing a combination of diphenyl-imiazolyl dimer and a heterocyclic mercaptan
JPS59195237A (en) 1983-04-20 1984-11-06 Fuji Photo Film Co Ltd Heat-developable photosensitive material
US4540598A (en) 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
US4622286A (en) 1985-09-16 1986-11-11 E. I. Du Pont De Nemours And Company Photoimaging composition containing admixture of leuco dye and 2,4,5-triphenylimidazolyl dimer
US5314709A (en) * 1991-03-20 1994-05-24 International Business Machines Corporation Unzippable polymer mask for screening operations
DE59309494D1 (en) 1992-05-22 1999-05-12 Ciba Geigy Ag High-resolution I-line photoresist with higher sensitivity
JP3367991B2 (en) * 1993-05-21 2003-01-20 キヤノン株式会社 Method of manufacturing ink jet recording head
US6756181B2 (en) * 1993-06-25 2004-06-29 Polyfibron Technologies, Inc. Laser imaged printing plates
DE4339010C2 (en) * 1993-06-25 2000-05-18 Pt Sub Inc Photohardenable product for printing plates
US5460921A (en) * 1993-09-08 1995-10-24 International Business Machines Corporation High density pattern template: materials and processes for the application of conductive pastes
US5705570A (en) * 1995-06-07 1998-01-06 International Business Machines Corporation Ablatively photodecomposable compositions
JP3831981B2 (en) * 1996-07-05 2006-10-11 大日本インキ化学工業株式会社 Resist material for excimer laser ablation
EP0927726B1 (en) 1996-09-19 2004-11-10 Nippon Soda Co., Ltd. Photocatalytic composition
US7282240B1 (en) * 1998-04-21 2007-10-16 President And Fellows Of Harvard College Elastomeric mask and use in fabrication of devices
JP4165780B2 (en) * 1998-09-08 2008-10-15 凸版印刷株式会社 Photosensitive black resin composition and method for forming black matrix
SG90732A1 (en) * 1999-06-30 2002-08-20 Canon Kk Laser processing method, method for manufacturing ink jet recording head using such method of manufacture, and ink jet recording head manufactured by such method of manufacture
JP4806486B2 (en) * 2000-02-28 2011-11-02 日東電工株式会社 Ultraviolet crosslinking adhesive composition and method for producing the same, and adhesive sheet and method for producing the same
JP4352578B2 (en) * 2000-05-16 2009-10-28 Ｊｓｒ株式会社 Negative radiation sensitive resin composition
US6576394B1 (en) 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
JP4042142B2 (en) * 2000-09-08 2008-02-06 Ｊｓｒ株式会社 Radiation-sensitive resin composition for forming partition of EL display element, partition and EL display element
JP4190167B2 (en) * 2000-09-26 2008-12-03 富士フイルム株式会社 Positive resist composition
US7264912B2 (en) * 2001-04-13 2007-09-04 Sumitomo Chemical Company, Limited Method of producing photoresist
JP3878451B2 (en) * 2001-10-22 2007-02-07 富士フイルムホールディングス株式会社 Photosensitive resin transfer material, image forming method, color filter and manufacturing method thereof, photomask and manufacturing method thereof
US7543592B2 (en) * 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US6989225B2 (en) 2002-07-18 2006-01-24 3D Systems, Inc. Stereolithographic resins with high temperature and high impact resistance
JP4251612B2 (en) * 2003-01-30 2009-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Negative photosensitive resin composition containing epoxy-containing substance
JP2004252201A (en) * 2003-02-20 2004-09-09 Fuji Photo Film Co Ltd Lithographic printing original plate
US7078157B2 (en) 2003-02-27 2006-07-18 Az Electronic Materials Usa Corp. Photosensitive composition and use thereof
TWI276929B (en) 2003-12-16 2007-03-21 Showa Denko Kk Photosensitive composition remover
JP4448381B2 (en) * 2004-05-26 2010-04-07 東京応化工業株式会社 Photosensitive composition
US7279362B2 (en) * 2005-03-31 2007-10-09 Intel Corporation Semiconductor wafer coat layers and methods therefor
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
US8114567B2 (en) * 2006-04-21 2012-02-14 Ndsu Research Foundation Polyol photosensitizers, carrier gas UV laser ablation sensitizers, and other additives and methods for making and using same
US7867688B2 (en) * 2006-05-30 2011-01-11 Eastman Kodak Company Laser ablation resist
JP2008013809A (en) * 2006-07-05 2008-01-24 Az Electronic Materials Kk Method of manufacturing functional film by laser ablation, and composition for laser ablation used therefor
JP2008081720A (en) * 2006-08-30 2008-04-10 Fujifilm Corp Decomposable resin composition and pattern-forming material using the same
JP2008106213A (en) 2006-09-25 2008-05-08 Fujifilm Corp Laser-decomposable resin composition and pattern-forming material using the same
US8288078B2 (en) 2007-01-24 2012-10-16 Tokyo Ohka Kogyo Co., Ltd. Photosensitive resin composition, and pattern formation method using the same
JP2008276167A (en) 2007-03-30 2008-11-13 Fujifilm Corp Lithographic printing plate original plate
WO2010095385A1 (en) 2009-02-20 2010-08-26 サンアプロ株式会社 Sulfonium salt, photo-acid generator, and photosensitive resin composition
WO2011002247A2 (en) 2009-07-02 2011-01-06 동우화인켐 주식회사 Colored photosensitive resin composition for preparation of color filter of solid-state image sensing device using 300 nm or less ultrashort wave exposure equipment, color filter using same, and solid-state image sensing device containing same
KR101995185B1 (en) 2009-12-17 2019-07-01 디에스엠 아이피 어셋츠 비.브이. Liquid radiation curable resins for additive fabrication comprising a triaryl sulfonium borate cationic photoinitiator
JP5621039B2 (en) * 2010-05-11 2014-11-05 スリーエム イノベイティブプロパティズカンパニー Curable composition, pressure-sensitive adhesive, method for producing the same, and adhesive article
JP5514044B2 (en) 2010-08-31 2014-06-04 住友化学株式会社 Method for producing antiglare film and method for producing mold for production of antiglare film
KR20130073367A (en) * 2011-12-23 2013-07-03 금호석유화학 주식회사 Novel acryl monomer, polymer and resist composition comprising same
US8524442B1 (en) * 2012-02-13 2013-09-03 David A. Recchia Integrated membrane lamination and UV exposure system and method of the same
CN202576612U (en) * 2012-04-23 2012-12-05 中国矿业大学 Microtextured device manufactured by laser photoetching assisted electrochemical deposition
US9012126B2 (en) * 2012-06-15 2015-04-21 Az Electronic Materials (Luxembourg) S.A.R.L. Positive photosensitive material
US8906594B2 (en) * 2012-06-15 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working thick film photoresist
US8906595B2 (en) 2012-11-01 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving resist pattern peeling
JP2016539201A (en) * 2013-10-02 2016-12-15 東洋合成工業株式会社 Chemical species generation improvement agent

Also Published As

Publication number Publication date
US20170285475A1 (en) 2017-10-05
IL257598A (en) 2018-06-28
EP3394674A1 (en) 2018-10-31
JP6933705B2 (en) 2021-09-08
TW202014801A (en) 2020-04-16
EP3394674B1 (en) 2020-05-06
JP6810754B2 (en) 2021-01-06
PT3511774T (en) 2022-01-25
PH12018500813A1 (en) 2018-10-29
CN110032042B (en) 2022-05-27
KR102432437B1 (en) 2022-08-12
CN108139670B (en) 2021-07-09
US10705424B2 (en) 2020-07-07
WO2017108778A1 (en) 2017-06-29
KR20220081382A (en) 2022-06-15
KR102407076B1 (en) 2022-06-08
US20170176856A1 (en) 2017-06-22
EP3511774A1 (en) 2019-07-17
JP2020060785A (en) 2020-04-16
PT3394674T (en) 2020-08-20
KR20180091811A (en) 2018-08-16
TWI717435B (en) 2021-02-01
CN110032042A (en) 2019-07-19
TWI737067B (en) 2021-08-21
TW201736951A (en) 2017-10-16
CN108139670A (en) 2018-06-08
EP3511774B1 (en) 2021-10-27
JP2019508752A (en) 2019-03-28

Similar Documents

Publication Publication Date Title
TWI590304B (en) Critical dimension control in photo-sensitized chemically-amplified resist
KR102052032B1 (en) Sulfonic Derivative Compounds as Photoacid Generators in Resist Applications
TWI265381B (en) Method for coating a substrate for EUV lithography and substrate with photoresist layer
TWI459440B (en) Flood exposure process for dual tone development in lithographic applications
US8124319B2 (en) Semiconductor lithography process
TW200600969A (en) Pattern forming method and material for forming underlayer film
TW200608152A (en) Method for manufacturing a microstructure, exposure device, and electronic apparatus
JP2019517137A5 (en)
TW200721260A (en) Substrate processing method, photomask manufacturing method, photomask and device manufacturing method
EP2397900A4 (en) Photomask and methods for manufacturing and correcting photomask
MY190719A (en) Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element
PH12018500813A1 (en) Negative-working photoresist compositions for laser ablation and use thereof
GB2517324A (en) Developable bottom antireflective coating composition and pattern forming method using thereof
JP2009545774A5 (en)
WO2008083197A3 (en) Imaging post structures using x and y dipole optics and a single mask
EP3761114A4 (en) Active light sensitive or radiation sensitive resin composition, resist film, pattern forming method, method for producing electronic device, and resin
TWI596148B (en) Lithography method, chemically amplified resist material and copolymer
JP2014211478A5 (en)
JP2018534608A5 (en)
KR20130099338A (en) Chemically amplified positive-imageable, high photo-sensitive organic insulator composition with high thermal stability and method of forming organic insulator using thereof
ES2896049T3 (en) Photosensitive printing preform and a method for producing a photosensitive relief image printing element
WO2011014011A3 (en) Photoresist composition comprising a crosslinkable curing substance
JP5559976B2 (en) Image forming method, photocured image, and photocurable composition used in the method
US20150253674A1 (en) Exposure apparatus, exposure method and manufacturing method of semiconductor device
TW201612166A (en) Ultraviolet absorber, composition for forming a resist under layer film, and patterning process