SG10201906930VA - Etching method and etching apparatus - Google Patents

Etching method and etching apparatus

Info

Publication number
SG10201906930VA
SG10201906930VA SG10201906930VA SG10201906930VA SG10201906930VA SG 10201906930V A SG10201906930V A SG 10201906930VA SG 10201906930V A SG10201906930V A SG 10201906930VA SG 10201906930V A SG10201906930V A SG 10201906930VA SG 10201906930V A SG10201906930V A SG 10201906930VA
Authority
SG
Singapore
Prior art keywords
etching
etching method
etching apparatus
Prior art date
Application number
SG10201906930VA
Other languages
English (en)
Inventor
Abe Takuya
Miyoshi Hidenori
Shimizu Akitaka
Nagakura Koichi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201906930VA publication Critical patent/SG10201906930VA/en

Links

SG10201906930VA 2018-07-30 2019-07-26 Etching method and etching apparatus SG10201906930VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018142005 2018-07-30
JP2019055846A JP7209567B2 (ja) 2018-07-30 2019-03-25 エッチング方法およびエッチング装置

Publications (1)

Publication Number Publication Date
SG10201906930VA true SG10201906930VA (en) 2020-02-27

Family

ID=69619511

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201906930VA SG10201906930VA (en) 2018-07-30 2019-07-26 Etching method and etching apparatus

Country Status (3)

Country Link
JP (1) JP7209567B2 (https=)
SG (1) SG10201906930VA (https=)
TW (1) TWI850239B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7738439B2 (ja) * 2020-12-15 2025-09-12 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US20220293430A1 (en) * 2021-03-12 2022-09-15 Applied Materials, Inc. Isotropic silicon nitride removal
KR102779338B1 (ko) * 2021-10-06 2025-03-12 주식회사 테스 기판 처리 방법
TWI836713B (zh) * 2021-11-12 2024-03-21 南韓商Ｔｅｓ股份有限公司 基板處理方法
KR20250162513A (ko) * 2023-03-17 2025-11-18 가부시키가이샤 코쿠사이 엘렉트릭 에칭 방법, 반도체 장치의 제조 방법, 처리 장치 및 프로그램

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19706682C2 (de) 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
JP4221859B2 (ja) 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
JP5206311B2 (ja) 2008-10-24 2013-06-12 株式会社デンソー 半導体装置の製造方法
US8501630B2 (en) * 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
US8999856B2 (en) * 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
KR20140022917A (ko) 2011-08-25 2014-02-25 다이니폰 스크린 세이조우 가부시키가이샤 패턴 형성 방법
US9263283B2 (en) * 2011-09-28 2016-02-16 Tokyo Electron Limited Etching method and apparatus
US9093389B2 (en) * 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
JP6456131B2 (ja) 2014-12-18 2019-01-23 キヤノン株式会社 基板の加工方法及び液体吐出ヘッドの製造方法
JP2018022830A (ja) 2016-08-05 2018-02-08 東京エレクトロン株式会社 被処理体を処理する方法
US10062579B2 (en) * 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US10692880B2 (en) 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures

Also Published As

Publication number Publication date
TWI850239B (zh) 2024-08-01
JP7209567B2 (ja) 2023-01-20
JP2020025070A (ja) 2020-02-13
TW202032656A (zh) 2020-09-01

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