SG10201708239YA - Method for separating a nanoimprint template from a substrate - Google Patents

Method for separating a nanoimprint template from a substrate

Info

Publication number
SG10201708239YA
SG10201708239YA SG10201708239YA SG10201708239YA SG10201708239YA SG 10201708239Y A SG10201708239Y A SG 10201708239YA SG 10201708239Y A SG10201708239Y A SG 10201708239YA SG 10201708239Y A SG10201708239Y A SG 10201708239YA SG 10201708239Y A SG10201708239Y A SG 10201708239YA
Authority
SG
Singapore
Prior art keywords
separating
substrate
nanoimprint template
nanoimprint
template
Prior art date
Application number
SG10201708239YA
Inventor
Choi Byung-Jin
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG10201708239YA publication Critical patent/SG10201708239YA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
SG10201708239YA 2016-10-31 2017-10-06 Method for separating a nanoimprint template from a substrate SG10201708239YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/338,735 US10627715B2 (en) 2016-10-31 2016-10-31 Method for separating a nanoimprint template from a substrate

Publications (1)

Publication Number Publication Date
SG10201708239YA true SG10201708239YA (en) 2018-05-30

Family

ID=62020180

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201708239YA SG10201708239YA (en) 2016-10-31 2017-10-06 Method for separating a nanoimprint template from a substrate

Country Status (6)

Country Link
US (2) US10627715B2 (en)
JP (1) JP6929196B2 (en)
KR (1) KR102210834B1 (en)
CN (1) CN108020986B (en)
SG (1) SG10201708239YA (en)
TW (1) TWI716644B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11454883B2 (en) 2016-11-14 2022-09-27 Canon Kabushiki Kaisha Template replication
US10288999B2 (en) 2016-12-20 2019-05-14 Canon Kabushiki Kaisha Methods for controlling extrusions during imprint template replication processes
US10444624B1 (en) 2018-11-30 2019-10-15 Canon Kabushiki Kaisha Active metrology frame and thermal frame temperature control in imprint lithography
US11442359B2 (en) 2019-03-11 2022-09-13 Canon Kabushiki Kaisha Method of separating a template from a shaped film on a substrate
JP7284639B2 (en) * 2019-06-07 2023-05-31 キヤノン株式会社 Molding apparatus and article manufacturing method
JP2023510449A (en) * 2019-12-02 2023-03-14 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Method and apparatus for stripping stamp
US20230229076A1 (en) * 2020-07-06 2023-07-20 Ev Group E. Thallner Gmbh Method and device for producing micro- and/or nanostructures
TW202211363A (en) * 2020-09-01 2022-03-16 美商伊路米納有限公司 Fixtures and related systems and methods

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
WO2002067055A2 (en) * 2000-10-12 2002-08-29 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
US6673287B2 (en) * 2001-05-16 2004-01-06 International Business Machines Corporation Vapor phase surface modification of composite substrates to form a molecularly thin release layer
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7591641B2 (en) * 2005-03-22 2009-09-22 Canon Kabushiki Kaisha Mold and process of production thereof
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US8361371B2 (en) 2008-02-08 2013-01-29 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US8652393B2 (en) 2008-10-24 2014-02-18 Molecular Imprints, Inc. Strain and kinetics control during separation phase of imprint process
JP4940262B2 (en) 2009-03-25 2012-05-30 株式会社東芝 Imprint pattern forming method
JP5363165B2 (en) * 2009-03-31 2013-12-11 富士フイルム株式会社 Method and apparatus for forming fine uneven pattern
JP2011103362A (en) 2009-11-10 2011-05-26 Toshiba Corp Pattern forming method
US20110189329A1 (en) 2010-01-29 2011-08-04 Molecular Imprints, Inc. Ultra-Compliant Nanoimprint Lithography Template
JP5438578B2 (en) * 2010-03-29 2014-03-12 富士フイルム株式会社 Method and apparatus for forming fine uneven pattern
WO2011139782A1 (en) * 2010-04-27 2011-11-10 Molecular Imprints, Inc. Separation control substrate/template for nanoimprint lithography
JP6028413B2 (en) * 2012-06-27 2016-11-16 大日本印刷株式会社 Method for producing nanoimprint template and template
JP6127517B2 (en) * 2013-01-08 2017-05-17 大日本印刷株式会社 Manufacturing method of imprint mold
SG11201604407WA (en) * 2013-12-31 2016-07-28 Canon Nanotechnologies Inc Asymmetric template shape modulation for partial field imprinting
US11454883B2 (en) 2016-11-14 2022-09-27 Canon Kabushiki Kaisha Template replication
US10969680B2 (en) 2016-11-30 2021-04-06 Canon Kabushiki Kaisha System and method for adjusting a position of a template
US10288999B2 (en) 2016-12-20 2019-05-14 Canon Kabushiki Kaisha Methods for controlling extrusions during imprint template replication processes

Also Published As

Publication number Publication date
TWI716644B (en) 2021-01-21
US20200225575A1 (en) 2020-07-16
KR20180048367A (en) 2018-05-10
TW201833667A (en) 2018-09-16
US11143957B2 (en) 2021-10-12
US20180117805A1 (en) 2018-05-03
JP6929196B2 (en) 2021-09-01
US10627715B2 (en) 2020-04-21
JP2018074159A (en) 2018-05-10
CN108020986A (en) 2018-05-11
KR102210834B1 (en) 2021-02-02
CN108020986B (en) 2021-08-03

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