SG10201707559TA - Ceramic electrostatic chuck including embedded faraday cage for rf delivery and associated methods for operation, monitoring, and control - Google Patents

Ceramic electrostatic chuck including embedded faraday cage for rf delivery and associated methods for operation, monitoring, and control

Info

Publication number
SG10201707559TA
SG10201707559TA SG10201707559TA SG10201707559TA SG10201707559TA SG 10201707559T A SG10201707559T A SG 10201707559TA SG 10201707559T A SG10201707559T A SG 10201707559TA SG 10201707559T A SG10201707559T A SG 10201707559TA SG 10201707559T A SG10201707559T A SG 10201707559TA
Authority
SG
Singapore
Prior art keywords
ceramic
power delivery
electrode
delivery
monitoring
Prior art date
Application number
SG10201707559TA
Inventor
Martin Paul Benjamin Neil
Povolny Henry
J Ricci Anthony
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201707559TA publication Critical patent/SG10201707559TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Gripping On Spindles (AREA)
  • Plasma Technology (AREA)

Abstract

Ceramic Electrostatic Chuck Including Embedded Faraday Cage for RF Delivery and Associated Methods for Operation, Monitoring, and Control A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic assembly. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic 10 assembly at a location vertically below the at least one clamp electrode such that a region of the ceramic assembly between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic assembly. Each of the 15 RF power delivery connection modules is configured to form an electrical connection from the lower support structure to the primary RF power delivery electrode at its respective location. Fig. 1 20 52
SG10201707559TA 2016-11-08 2017-09-14 Ceramic electrostatic chuck including embedded faraday cage for rf delivery and associated methods for operation, monitoring, and control SG10201707559TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662419299P 2016-11-08 2016-11-08
US15/690,203 US10079168B2 (en) 2016-11-08 2017-08-29 Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control

Publications (1)

Publication Number Publication Date
SG10201707559TA true SG10201707559TA (en) 2018-06-28

Family

ID=62064102

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201707559TA SG10201707559TA (en) 2016-11-08 2017-09-14 Ceramic electrostatic chuck including embedded faraday cage for rf delivery and associated methods for operation, monitoring, and control

Country Status (5)

Country Link
US (2) US10079168B2 (en)
JP (3) JP6976138B2 (en)
KR (1) KR102449986B1 (en)
CN (2) CN108074791B (en)
SG (1) SG10201707559TA (en)

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0478133A (en) * 1990-07-20 1992-03-12 Tokyo Electron Ltd Plasma treating device
JP3297771B2 (en) * 1993-11-05 2002-07-02 ソニー株式会社 Semiconductor manufacturing equipment
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
GB9715409D0 (en) * 1997-07-23 1997-09-24 Aea Technology Plc Gas purification
KR100281241B1 (en) * 1998-11-19 2001-06-01 하대규 Plasma etching by changing the lattice plane of the top of Faraday box
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
JP2005197393A (en) * 2004-01-06 2005-07-21 Ibiden Co Ltd Electrode-burying member for plasma generator
JP2005277335A (en) * 2004-03-26 2005-10-06 Kyocera Corp Wafer support member
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
JP5069452B2 (en) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド Substrate support with electrostatic chuck having dual temperature zones
JP5068070B2 (en) * 2006-12-21 2012-11-07 グンゼ株式会社 Substrate film for dicing
JP5029257B2 (en) * 2007-01-17 2012-09-19 東京エレクトロン株式会社 Mounting table structure and processing device
JP5759177B2 (en) 2008-02-08 2015-08-05 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Plasma processing apparatus, method for processing semiconductor substrate, and axis perpendicular displacement bellows unit
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9706605B2 (en) 2012-03-30 2017-07-11 Applied Materials, Inc. Substrate support with feedthrough structure
US10049948B2 (en) * 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US9668373B2 (en) * 2013-03-15 2017-05-30 Applied Materials, Inc. Substrate support chuck cooling for deposition chamber
US10002782B2 (en) * 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
US9673025B2 (en) * 2015-07-27 2017-06-06 Lam Research Corporation Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control

Also Published As

Publication number Publication date
CN111092010B (en) 2022-12-13
US20180130690A1 (en) 2018-05-10
KR20180051361A (en) 2018-05-16
CN111092010A (en) 2020-05-01
US10192767B2 (en) 2019-01-29
JP2024026298A (en) 2024-02-28
CN108074791B (en) 2019-11-29
JP2022025137A (en) 2022-02-09
CN108074791A (en) 2018-05-25
JP6976138B2 (en) 2021-12-08
US10079168B2 (en) 2018-09-18
US20180358254A1 (en) 2018-12-13
KR102449986B1 (en) 2022-09-30
JP2018098492A (en) 2018-06-21

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