SG10201706424RA - Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications - Google Patents
Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applicationsInfo
- Publication number
- SG10201706424RA SG10201706424RA SG10201706424RA SG10201706424RA SG10201706424RA SG 10201706424R A SG10201706424R A SG 10201706424RA SG 10201706424R A SG10201706424R A SG 10201706424RA SG 10201706424R A SG10201706424R A SG 10201706424RA SG 10201706424R A SG10201706424R A SG 10201706424RA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- applications
- materials
- methods
- components
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Optical Elements Other Than Lenses (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
- Financial Or Insurance-Related Operations Such As Payment And Settlement (AREA)
- Optical Filters (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261588601P | 2012-01-19 | 2012-01-19 | |
PCT/US2013/022297 WO2013109986A1 (en) | 2012-01-19 | 2013-01-18 | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201706424RA true SG10201706424RA (en) | 2017-09-28 |
Family
ID=48796997
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201406666RA SG11201406666RA (en) | 2012-01-19 | 2013-01-18 | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
SG10201706424RA SG10201706424RA (en) | 2012-01-19 | 2013-01-18 | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201406666RA SG11201406666RA (en) | 2012-01-19 | 2013-01-18 | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
Country Status (8)
Country | Link |
---|---|
US (1) | US9322964B2 (en) |
EP (1) | EP2807522A4 (en) |
JP (4) | JP2015510688A (en) |
KR (3) | KR101930926B1 (en) |
CN (2) | CN104254789B (en) |
IN (1) | IN2014DN06889A (en) |
SG (2) | SG11201406666RA (en) |
WO (1) | WO2013109986A1 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013174656A2 (en) * | 2012-05-21 | 2013-11-28 | Asml Netherlands B.V. | Lithographic apparatus |
KR102059130B1 (en) * | 2013-02-14 | 2019-12-24 | 삼성전자주식회사 | Nanostructure, optical device including nanostructure and methods of manufacturing the same |
TWI494616B (en) * | 2014-01-28 | 2015-08-01 | Univ Nat Taiwan | Multilayer mirror structure |
KR102527501B1 (en) * | 2014-11-26 | 2023-05-02 | 수프리야 자이스왈 | Materials, components and methods for use with EUV radiation in lithography and other applications |
JP6731415B2 (en) * | 2015-02-10 | 2020-07-29 | カール・ツァイス・エスエムティー・ゲーエムベーハー | EUV multilayer mirror, optical system including multilayer mirror, and method for manufacturing multilayer mirror |
TWI769137B (en) * | 2015-06-30 | 2022-07-01 | 蘇普利亞 傑西瓦爾 | Coatings for an optical element in the uv, euv and soft x-ray bands and methods of preparing same |
NL2017692A (en) * | 2015-11-19 | 2017-06-02 | Asml Netherlands Bv | Euv source chamber and gas flow regime for lithographic apparatus, multi-layer mirror and lithographic apparatus |
CA3012825C (en) * | 2016-02-01 | 2024-02-13 | Supriya JAISWAL | Extreme ultraviolet radiation in genomic sequencing and other applications |
DE102016213839A1 (en) | 2016-07-27 | 2016-12-15 | Carl Zeiss Smt Gmbh | Mirror for a microlithographic projection exposure system and method for processing a mirror |
JP6763243B2 (en) * | 2016-09-07 | 2020-09-30 | ウシオ電機株式会社 | Light irradiator |
DE102016224200A1 (en) * | 2016-12-06 | 2018-06-07 | Carl Zeiss Smt Gmbh | Method of repairing reflective optical elements for EUV lithography |
DE102017206256A1 (en) | 2017-04-11 | 2018-10-11 | Carl Zeiss Smt Gmbh | Wavefront correction element for use in an optical system |
KR102456578B1 (en) * | 2017-07-14 | 2022-10-20 | 삼성전자주식회사 | Hardmask composition, method of manufacturing the same and method of forming patterned layer using hardmask composition |
US20190049634A1 (en) * | 2017-08-08 | 2019-02-14 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
US11173545B2 (en) | 2017-10-23 | 2021-11-16 | Lawrence Livermore National Security, Llc | Hierarchical porous metals with deterministic 3D morphology and shape via de-alloying of 3D printed alloys |
WO2020081842A1 (en) | 2018-10-17 | 2020-04-23 | Astrileux Corporation | Photomask having reflective layer with non-reflective regions |
WO2020187713A1 (en) * | 2019-03-18 | 2020-09-24 | Asml Holding N.V. | Micromanipulator devices and metrology system |
WO2023163077A1 (en) | 2022-02-25 | 2023-08-31 | 三ツ星ベルト株式会社 | Belt transmission mechanism |
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US5151819A (en) * | 1988-12-12 | 1992-09-29 | General Atomics | Barrier for scattering electromagnetic radiation |
EP0496323B2 (en) * | 1991-01-22 | 2002-12-11 | Toray Industries, Inc. | Reflector for a surface light source |
JPH07240364A (en) * | 1994-03-02 | 1995-09-12 | Canon Inc | Reflecting mask and its manufacturing method as well as exposure device using the mask |
US5855753A (en) * | 1996-11-26 | 1999-01-05 | The Trustees Of Princeton University | Method for electrohydrodynamically assembling patterned colloidal structures |
EP1356476B1 (en) * | 2001-01-26 | 2006-08-23 | Carl Zeiss SMT AG | Narrow-band spectral filter and the use thereof |
US6920199B2 (en) * | 2002-02-20 | 2005-07-19 | Gkss-Forschungszentrum Geesthacht Gmbh | Mirror element for the reflection of x-rays |
JP2003318094A (en) * | 2002-04-24 | 2003-11-07 | Shin Etsu Handotai Co Ltd | Reflector for aligner, aligner, and semiconductor device manufactured by using the same |
US6999669B2 (en) * | 2002-08-19 | 2006-02-14 | Georgia Tech Research Corporation | Photonic crystals |
JP2005536900A (en) * | 2002-08-26 | 2005-12-02 | カール・ツァイス・エスエムティー・アーゲー | A grating-based spectral filter that removes a band of radiation within an extreme ultraviolet lithography system |
US6825988B2 (en) * | 2002-09-04 | 2004-11-30 | Intel Corporation | Etched silicon diffraction gratings for use as EUV spectral purity filters |
AU2003297714A1 (en) * | 2002-12-09 | 2004-06-30 | Gregory D. Cooper | Programmable photolithographic mask based on nano-sized semiconductor particles |
WO2005038886A1 (en) | 2003-10-15 | 2005-04-28 | Nikon Corporation | Multilayer film reflection mirror, production method for multilayer film reflection mirror, and exposure system |
CN100449690C (en) * | 2003-10-15 | 2009-01-07 | 株式会社尼康 | Multilayer mirror, method for manufacturing the same, and exposure equipment |
KR100542464B1 (en) * | 2003-11-20 | 2006-01-11 | 학교법인 한양학원 | Fabrication method of extreme ultraviolet radiation mask mirror using atomic force microscope lithography |
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JP2005302963A (en) * | 2004-04-09 | 2005-10-27 | Canon Inc | Exposure device |
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JP5193454B2 (en) * | 2005-10-31 | 2013-05-08 | 株式会社東芝 | Short wavelength polarizing element and polarizing element manufacturing method |
CN101467090A (en) * | 2006-06-16 | 2009-06-24 | 卡尔蔡司Smt股份公司 | Projection objective of a microlithographic projection exposure apparatus |
JP2008053464A (en) * | 2006-08-24 | 2008-03-06 | Tokyo Electron Ltd | Applicator and developer, resist pattern formation apparatus, application and development method, method of forming resist pattern, and storage medium |
EP1930771A1 (en) * | 2006-12-04 | 2008-06-11 | Carl Zeiss SMT AG | Projection objectives having mirror elements with reflective coatings |
JP2008151983A (en) * | 2006-12-18 | 2008-07-03 | Canon Inc | Multilayer film reflection mirror |
JP2008288299A (en) * | 2007-05-16 | 2008-11-27 | Nikon Corp | Multilayer-film reflecting mirror, illuminator, exposure apparatus, and manufacturing method for device |
CN101149442B (en) * | 2007-09-18 | 2010-10-20 | 栾玉成 | Reflection-proof film with nano pore, its preparation method and uses |
JP5162200B2 (en) * | 2007-10-10 | 2013-03-13 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the same |
JP5065082B2 (en) * | 2008-02-25 | 2012-10-31 | 東京エレクトロン株式会社 | Substrate processing method, program, computer storage medium, and substrate processing system |
NL1036469A1 (en) * | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured. |
TWI380136B (en) * | 2008-02-29 | 2012-12-21 | Nanya Technology Corp | Exposing system, mask and design method thereof |
JP5511818B2 (en) * | 2008-08-06 | 2014-06-04 | エーエスエムエル ネザーランズ ビー.ブイ. | Optical element for a lithographic apparatus, lithographic apparatus comprising such an optical element, and method for manufacturing such an optical element |
JP5257066B2 (en) * | 2008-12-26 | 2013-08-07 | ソニー株式会社 | Optical element, display device, optical component with antireflection function, and master |
WO2010094696A2 (en) * | 2009-02-18 | 2010-08-26 | European Nano Invest Ab | Nano plasmonic parallel lithography |
NL2005460A (en) | 2009-11-20 | 2011-05-23 | Asml Netherlands Bv | Multilayer mirror, lithographic apparatus, and methods for manufacturing a multilayer mirror and a product. |
US9594306B2 (en) * | 2011-03-04 | 2017-03-14 | Asml Netherlands B.V. | Lithographic apparatus, spectral purity filter and device manufacturing method |
JP5641994B2 (en) * | 2011-03-18 | 2014-12-17 | 株式会社東芝 | Coating apparatus and coating method |
JP6444909B2 (en) * | 2016-02-22 | 2018-12-26 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing apparatus, and computer-readable recording medium |
-
2013
- 2013-01-18 JP JP2014553485A patent/JP2015510688A/en active Pending
- 2013-01-18 WO PCT/US2013/022297 patent/WO2013109986A1/en active Application Filing
- 2013-01-18 SG SG11201406666RA patent/SG11201406666RA/en unknown
- 2013-01-18 CN CN201380014923.6A patent/CN104254789B/en active Active
- 2013-01-18 US US13/745,618 patent/US9322964B2/en not_active Expired - Fee Related
- 2013-01-18 SG SG10201706424RA patent/SG10201706424RA/en unknown
- 2013-01-18 EP EP13738584.5A patent/EP2807522A4/en active Pending
- 2013-01-18 KR KR1020147023034A patent/KR101930926B1/en active IP Right Grant
- 2013-01-18 KR KR1020187036297A patent/KR102176709B1/en active IP Right Grant
- 2013-01-18 KR KR1020207031806A patent/KR102258969B1/en active IP Right Grant
- 2013-01-18 CN CN201710706564.0A patent/CN107367900A/en active Pending
-
2014
- 2014-08-16 IN IN6889DEN2014 patent/IN2014DN06889A/en unknown
-
2019
- 2019-05-22 JP JP2019096307A patent/JP2019179246A/en active Pending
-
2021
- 2021-07-02 JP JP2021110754A patent/JP2021170123A/en active Pending
-
2022
- 2022-10-14 JP JP2022165696A patent/JP2023017775A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR102258969B1 (en) | 2021-06-02 |
JP2021170123A (en) | 2021-10-28 |
KR20180135127A (en) | 2018-12-19 |
EP2807522A4 (en) | 2015-11-25 |
US20130188245A1 (en) | 2013-07-25 |
CN104254789B (en) | 2017-07-28 |
JP2023017775A (en) | 2023-02-07 |
CN104254789A (en) | 2014-12-31 |
US9322964B2 (en) | 2016-04-26 |
KR20200128207A (en) | 2020-11-11 |
JP2015510688A (en) | 2015-04-09 |
KR20140129031A (en) | 2014-11-06 |
CN107367900A (en) | 2017-11-21 |
EP2807522A1 (en) | 2014-12-03 |
WO2013109986A1 (en) | 2013-07-25 |
SG11201406666RA (en) | 2014-12-30 |
JP2019179246A (en) | 2019-10-17 |
KR102176709B1 (en) | 2020-11-10 |
KR101930926B1 (en) | 2019-03-11 |
IN2014DN06889A (en) | 2015-05-15 |
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