SG10201705326XA - Liquid doping media for the local doping of silicon wafers - Google Patents
Liquid doping media for the local doping of silicon wafersInfo
- Publication number
- SG10201705326XA SG10201705326XA SG10201705326XA SG10201705326XA SG10201705326XA SG 10201705326X A SG10201705326X A SG 10201705326XA SG 10201705326X A SG10201705326X A SG 10201705326XA SG 10201705326X A SG10201705326X A SG 10201705326XA SG 10201705326X A SG10201705326X A SG 10201705326XA
- Authority
- SG
- Singapore
- Prior art keywords
- doping
- silicon wafers
- media
- liquid
- local
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000007788 liquid Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
- H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Sustainable Energy (AREA)
- Dispersion Chemistry (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12008660 | 2012-12-28 | ||
EP13005734 | 2013-12-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201705326XA true SG10201705326XA (en) | 2017-07-28 |
Family
ID=49917636
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201504934UA SG11201504934UA (en) | 2012-12-28 | 2013-12-18 | Liquid doping media for the local doping of silicon wafers |
SG10201705326XA SG10201705326XA (en) | 2012-12-28 | 2013-12-18 | Liquid doping media for the local doping of silicon wafers |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201504934UA SG11201504934UA (en) | 2012-12-28 | 2013-12-18 | Liquid doping media for the local doping of silicon wafers |
Country Status (8)
Country | Link |
---|---|
US (1) | US20160218185A1 (de) |
EP (1) | EP2938760A1 (de) |
JP (1) | JP2016506631A (de) |
KR (1) | KR20150103162A (de) |
CN (1) | CN104870699A (de) |
SG (2) | SG11201504934UA (de) |
TW (1) | TW201439372A (de) |
WO (1) | WO2014101990A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170100628A (ko) * | 2014-12-30 | 2017-09-04 | 메르크 파텐트 게엠베하 | 반도체를 도핑하기 위한 방법 |
US20170365734A1 (en) | 2014-12-30 | 2017-12-21 | Merck Patent Gmbh | Laser doping of semiconductors |
WO2016150549A2 (de) * | 2015-03-23 | 2016-09-29 | Merck Patent Gmbh | Druckbare tinte zur verwendung als diffusions- und legierungsbarriere zur herstellung von hocheffizienten kristallinen siliziumsolarzellen |
WO2016150548A2 (de) * | 2015-03-23 | 2016-09-29 | Merck Patent Gmbh | Druckbare pastöse diffusions- und legierungsbarriere zur herstellung von hocheffizienten kristallinen siliziumsolarzellen |
EP3284110A1 (de) * | 2015-04-15 | 2018-02-21 | Merck Patent GmbH | Sol-gel-basierte druckbare und parasitär-diffusionshemmende dotiermedien zur lokalen dotierung von siliziumwafern |
KR20170137878A (ko) * | 2015-04-15 | 2017-12-13 | 메르크 파텐트 게엠베하 | 인 확산을 억제하는 인쇄가능한 도핑 매질을 이용하는 태양 전지의 제조 방법 |
CN108352413B (zh) | 2015-10-25 | 2021-11-02 | 索拉昂德有限公司 | 双面电池制造方法 |
DE102018109571B4 (de) | 2018-04-20 | 2021-09-02 | Karlsruher Institut für Technologie | Verfahren zum Dotieren von Halbleitern |
CN109325294B (zh) * | 2018-09-25 | 2023-08-11 | 云南电网有限责任公司电力科学研究院 | 一种火电机组空气预热器性能状态的证据表征构建方法 |
CN110518084B (zh) * | 2019-08-06 | 2021-03-05 | 苏州腾晖光伏技术有限公司 | 一种镓局域掺杂的perc电池及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2245407B3 (de) * | 1973-09-19 | 1977-04-08 | Texas Instruments Inc | |
JPS5534258A (en) * | 1978-09-01 | 1980-03-10 | Tokyo Denshi Kagaku Kabushiki | Coating solution for forming silica film |
JPH06181201A (ja) * | 1992-12-11 | 1994-06-28 | Kawasaki Steel Corp | 半導体装置の絶縁膜およびその絶縁膜形成用塗布液 |
DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
US7159421B2 (en) * | 2002-07-16 | 2007-01-09 | Agere Systems Inc. | Manufacture of planar waveguides using sol-gel techniques |
US7393469B2 (en) * | 2003-07-31 | 2008-07-01 | Ramazan Benrashid | High performance sol-gel spin-on glass materials |
US7297414B2 (en) * | 2003-09-30 | 2007-11-20 | Fujifilm Corporation | Gas barrier film and method for producing the same |
DE602005010747D1 (de) * | 2005-01-13 | 2008-12-11 | Cinv Ag | Kohlenstoffnanopartikel enthaltende verbundwerkstoffe |
WO2008122596A2 (en) * | 2007-04-05 | 2008-10-16 | Cinvention Ag | Curable therapeutic implant composition |
US20100035422A1 (en) * | 2008-08-06 | 2010-02-11 | Honeywell International, Inc. | Methods for forming doped regions in a semiconductor material |
US7951696B2 (en) * | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
JP2010267787A (ja) * | 2009-05-14 | 2010-11-25 | Sharp Corp | 半導体装置の製造方法 |
WO2011074467A1 (ja) * | 2009-12-18 | 2011-06-23 | 東レ株式会社 | 半導体デバイスの製造方法および裏面接合型太陽電池 |
-
2013
- 2013-12-18 CN CN201380067919.6A patent/CN104870699A/zh active Pending
- 2013-12-18 JP JP2015550009A patent/JP2016506631A/ja active Pending
- 2013-12-18 SG SG11201504934UA patent/SG11201504934UA/en unknown
- 2013-12-18 SG SG10201705326XA patent/SG10201705326XA/en unknown
- 2013-12-18 WO PCT/EP2013/003839 patent/WO2014101990A1/de active Application Filing
- 2013-12-18 KR KR1020157020436A patent/KR20150103162A/ko not_active Application Discontinuation
- 2013-12-18 EP EP13817655.7A patent/EP2938760A1/de not_active Withdrawn
- 2013-12-18 US US14/655,441 patent/US20160218185A1/en not_active Abandoned
- 2013-12-27 TW TW102148895A patent/TW201439372A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2014101990A1 (de) | 2014-07-03 |
CN104870699A (zh) | 2015-08-26 |
JP2016506631A (ja) | 2016-03-03 |
TW201439372A (zh) | 2014-10-16 |
EP2938760A1 (de) | 2015-11-04 |
US20160218185A1 (en) | 2016-07-28 |
SG11201504934UA (en) | 2015-07-30 |
KR20150103162A (ko) | 2015-09-09 |
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