SG10201507987RA - Method and apparatus for rf compensation in plasma assisted atomic layer deposition - Google Patents
Method and apparatus for rf compensation in plasma assisted atomic layer depositionInfo
- Publication number
- SG10201507987RA SG10201507987RA SG10201507987RA SG10201507987RA SG10201507987RA SG 10201507987R A SG10201507987R A SG 10201507987RA SG 10201507987R A SG10201507987R A SG 10201507987RA SG 10201507987R A SG10201507987R A SG 10201507987RA SG 10201507987R A SG10201507987R A SG 10201507987RA
- Authority
- SG
- Singapore
- Prior art keywords
- compensation
- atomic layer
- layer deposition
- plasma assisted
- assisted atomic
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/502,947 US9624578B2 (en) | 2014-09-30 | 2014-09-30 | Method for RF compensation in plasma assisted atomic layer deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201507987RA true SG10201507987RA (en) | 2016-04-28 |
Family
ID=55583796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201507987RA SG10201507987RA (en) | 2014-09-30 | 2015-09-25 | Method and apparatus for rf compensation in plasma assisted atomic layer deposition |
Country Status (6)
Country | Link |
---|---|
US (1) | US9624578B2 (en) |
JP (1) | JP6758808B2 (en) |
KR (2) | KR102489449B1 (en) |
CN (1) | CN105463408B (en) |
SG (1) | SG10201507987RA (en) |
TW (1) | TWI725000B (en) |
Families Citing this family (20)
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KR102323248B1 (en) * | 2015-03-25 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a thin film |
US10280519B2 (en) | 2016-12-09 | 2019-05-07 | Asm Ip Holding B.V. | Thermal atomic layer etching processes |
US11060189B2 (en) | 2016-12-16 | 2021-07-13 | Applied Materials, Inc. | Method to enable high temperature processing without chamber drifting |
US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
US10692724B2 (en) * | 2016-12-23 | 2020-06-23 | Lam Research Corporation | Atomic layer etching methods and apparatus |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
JP2019114692A (en) | 2017-12-25 | 2019-07-11 | 東京エレクトロン株式会社 | Film deposition method |
JP7089881B2 (en) | 2018-01-10 | 2022-06-23 | 東京エレクトロン株式会社 | Film formation method |
KR102655866B1 (en) | 2018-01-31 | 2024-04-05 | 램 리써치 코포레이션 | Electrostatic chuck (ESC) pedestal voltage isolation |
WO2019182913A1 (en) * | 2018-03-20 | 2019-09-26 | Tokyo Electron Limited | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same |
US11086233B2 (en) * | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
US10847352B2 (en) * | 2018-08-02 | 2020-11-24 | Lam Research Corporation | Compensating chamber and process effects to improve critical dimension variation for trim process |
CN108889519B (en) * | 2018-08-10 | 2021-05-25 | 广州市盛华实业有限公司 | Film forming unit, film forming system and film forming method |
EP3874914A1 (en) * | 2018-11-02 | 2021-09-08 | Technische Universiteit Eindhoven | Tunable source of intense, narrowband, fully coherent, soft x-rays |
KR20220000421A (en) * | 2019-05-24 | 2022-01-03 | 램 리써치 코포레이션 | Electrochemical Deposition System Including Optical Probes |
JP2021019201A (en) | 2019-07-18 | 2021-02-15 | エーエスエム アイピー ホールディング ビー.ブイ. | Showerhead device for semiconductor processing system |
CN114746577A (en) * | 2019-12-04 | 2022-07-12 | 朗姆研究公司 | Pressure batch compensation to stabilize CD variations for trim and deposition processes |
US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
CN113529057B (en) * | 2020-04-13 | 2023-02-28 | 长鑫存储技术有限公司 | Semiconductor manufacturing method and multi-sheet type deposition apparatus |
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JPH05121332A (en) * | 1991-10-24 | 1993-05-18 | Canon Inc | Method and apparatus for formation of functional deposition film |
US6051284A (en) * | 1996-05-08 | 2000-04-18 | Applied Materials, Inc. | Chamber monitoring and adjustment by plasma RF metrology |
JP2001007089A (en) | 1999-06-25 | 2001-01-12 | Matsushita Electric Ind Co Ltd | Plasma treatment method and apparatus |
JP2001073132A (en) | 1999-08-31 | 2001-03-21 | Matsushita Electric Ind Co Ltd | Sputtering method and system therefor |
US6350697B1 (en) * | 1999-12-22 | 2002-02-26 | Lam Research Corporation | Method of cleaning and conditioning plasma reaction chamber |
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US20140030444A1 (en) | 2012-07-30 | 2014-01-30 | Novellus Systems, Inc. | High pressure, high power plasma activated conformal film deposition |
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TWI595112B (en) * | 2012-10-23 | 2017-08-11 | 蘭姆研究公司 | Sub-saturated atomic layer deposition and conformal film deposition |
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US9677176B2 (en) | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
-
2014
- 2014-09-30 US US14/502,947 patent/US9624578B2/en active Active
-
2015
- 2015-09-24 KR KR1020150135292A patent/KR102489449B1/en active IP Right Grant
- 2015-09-24 TW TW104131525A patent/TWI725000B/en active
- 2015-09-24 JP JP2015187136A patent/JP6758808B2/en active Active
- 2015-09-25 SG SG10201507987RA patent/SG10201507987RA/en unknown
- 2015-09-30 CN CN201510642077.3A patent/CN105463408B/en active Active
-
2023
- 2023-01-12 KR KR1020230004652A patent/KR102612832B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20160090650A1 (en) | 2016-03-31 |
KR20230010807A (en) | 2023-01-19 |
TWI725000B (en) | 2021-04-21 |
KR102489449B1 (en) | 2023-01-16 |
CN105463408B (en) | 2019-11-12 |
US9624578B2 (en) | 2017-04-18 |
CN105463408A (en) | 2016-04-06 |
JP6758808B2 (en) | 2020-09-23 |
TW201631204A (en) | 2016-09-01 |
KR20160038783A (en) | 2016-04-07 |
KR102612832B1 (en) | 2023-12-11 |
JP2016072625A (en) | 2016-05-09 |
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