SG10201503283SA - Single ald cycle thickness control in multi-station substrate deposition systems - Google Patents
Single ald cycle thickness control in multi-station substrate deposition systemsInfo
- Publication number
- SG10201503283SA SG10201503283SA SG10201503283SA SG10201503283SA SG10201503283SA SG 10201503283S A SG10201503283S A SG 10201503283SA SG 10201503283S A SG10201503283S A SG 10201503283SA SG 10201503283S A SG10201503283S A SG 10201503283SA SG 10201503283S A SG10201503283S A SG 10201503283SA
- Authority
- SG
- Singapore
- Prior art keywords
- thickness control
- ald cycle
- deposition systems
- substrate deposition
- station substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461994025P | 2014-05-15 | 2014-05-15 | |
US14/455,796 US9797042B2 (en) | 2014-05-15 | 2014-08-08 | Single ALD cycle thickness control in multi-station substrate deposition systems |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201503283SA true SG10201503283SA (en) | 2015-12-30 |
Family
ID=54539102
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201503283SA SG10201503283SA (en) | 2014-05-15 | 2015-04-27 | Single ald cycle thickness control in multi-station substrate deposition systems |
SG10202002293XA SG10202002293XA (en) | 2014-05-15 | 2015-04-27 | Single ald cycle thickness control in multi-station substrate deposition systems |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202002293XA SG10202002293XA (en) | 2014-05-15 | 2015-04-27 | Single ald cycle thickness control in multi-station substrate deposition systems |
Country Status (6)
Country | Link |
---|---|
US (2) | US9797042B2 (en) |
JP (1) | JP6567864B2 (en) |
KR (1) | KR102385553B1 (en) |
CN (1) | CN105088197B (en) |
SG (2) | SG10201503283SA (en) |
TW (1) | TWI659454B (en) |
Families Citing this family (30)
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US9797042B2 (en) | 2014-05-15 | 2017-10-24 | Lam Research Corporation | Single ALD cycle thickness control in multi-station substrate deposition systems |
KR102323248B1 (en) * | 2015-03-25 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a thin film |
JP6541599B2 (en) * | 2016-03-28 | 2019-07-10 | 東京エレクトロン株式会社 | Control device, substrate processing system, substrate processing method and program |
KR102052435B1 (en) * | 2016-03-31 | 2019-12-05 | 가부시키가이샤 코쿠사이 엘렉트릭 | Method for manufacturing semiconductor device, substrate loading method and recording medium |
US20170314129A1 (en) * | 2016-04-29 | 2017-11-02 | Lam Research Corporation | Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system |
US9966316B2 (en) | 2016-05-25 | 2018-05-08 | Toshiba Memory Corporation | Deposition supporting system, depositing apparatus and manufacturing method of a semiconductor device |
US9738977B1 (en) * | 2016-06-17 | 2017-08-22 | Lam Research Corporation | Showerhead curtain gas method and system for film profile modulation |
US9698042B1 (en) | 2016-07-22 | 2017-07-04 | Lam Research Corporation | Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge |
US10553465B2 (en) * | 2016-07-25 | 2020-02-04 | Lam Research Corporation | Control of water bow in multiple stations |
US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
US10128116B2 (en) * | 2016-10-17 | 2018-11-13 | Lam Research Corporation | Integrated direct dielectric and metal deposition |
KR20180061866A (en) * | 2016-11-30 | 2018-06-08 | 엘지디스플레이 주식회사 | Encapsulation unit and organic light emitting display including the same |
US10692724B2 (en) * | 2016-12-23 | 2020-06-23 | Lam Research Corporation | Atomic layer etching methods and apparatus |
JP6586440B2 (en) | 2017-07-11 | 2019-10-02 | 株式会社Kokusai Electric | Semiconductor device manufacturing method, substrate processing apparatus, and program |
US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
JP6714562B2 (en) | 2017-09-20 | 2020-06-24 | 株式会社Kokusai Electric | Substrate processing apparatus, semiconductor device manufacturing method and program |
TWI768849B (en) | 2017-10-27 | 2022-06-21 | 美商應用材料股份有限公司 | Single wafer processing environments with spatial separation |
US20200066572A1 (en) * | 2017-10-27 | 2020-02-27 | Applied Materials, Inc. | Methods Of Operating A Spatial Deposition Tool |
US20200090978A1 (en) * | 2017-10-27 | 2020-03-19 | Applied Materials, Inc. | Methods Of Operating A Spatial Deposition Tool |
US10109517B1 (en) | 2018-01-10 | 2018-10-23 | Lam Research Corporation | Rotational indexer with additional rotational axes |
US11823909B2 (en) | 2018-01-16 | 2023-11-21 | Lam Research Corporation | Selective processing with etch residue-based inhibitors |
KR20210070383A (en) * | 2018-10-29 | 2021-06-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods of Operating a Spatial Deposition Tool |
KR20200108240A (en) * | 2019-03-06 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Substrate carrier apparatus, substrate processing apparatus, and method of adjusting temperature of susceptor |
WO2020185539A1 (en) * | 2019-03-12 | 2020-09-17 | Lam Research Corporation | Multi-station semiconductor processing with independently adjustable pedestals |
TWI737996B (en) * | 2019-05-16 | 2021-09-01 | 華景電通股份有限公司 | Load port monitoring system and monitoring method thereof |
CN110421271A (en) * | 2019-07-04 | 2019-11-08 | 大族激光科技产业集团股份有限公司 | Loading and unloading method |
JP6766235B2 (en) * | 2019-08-06 | 2020-10-07 | 株式会社Kokusai Electric | Semiconductor device manufacturing methods, substrate processing devices and programs |
CN115244655A (en) * | 2020-01-03 | 2022-10-25 | 朗姆研究公司 | Control of backside bow compensation deposition from station to station |
WO2023059988A1 (en) * | 2021-10-07 | 2023-04-13 | Lam Research Corporation | Selective control of multi-station processing chamber components |
CN115418629B (en) * | 2022-08-17 | 2024-01-12 | 杭州富芯半导体有限公司 | Method for thin film deposition |
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US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
-
2014
- 2014-08-08 US US14/455,796 patent/US9797042B2/en active Active
-
2015
- 2015-04-27 SG SG10201503283SA patent/SG10201503283SA/en unknown
- 2015-04-27 SG SG10202002293XA patent/SG10202002293XA/en unknown
- 2015-05-08 JP JP2015095293A patent/JP6567864B2/en active Active
- 2015-05-14 TW TW104115353A patent/TWI659454B/en active
- 2015-05-14 CN CN201510245528.XA patent/CN105088197B/en active Active
- 2015-05-15 KR KR1020150068349A patent/KR102385553B1/en active IP Right Grant
-
2017
- 2017-09-13 US US15/703,694 patent/US10577691B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP6567864B2 (en) | 2019-08-28 |
KR20150133644A (en) | 2015-11-30 |
US20150332912A1 (en) | 2015-11-19 |
CN105088197A (en) | 2015-11-25 |
KR102385553B1 (en) | 2022-04-11 |
US9797042B2 (en) | 2017-10-24 |
US10577691B2 (en) | 2020-03-03 |
TWI659454B (en) | 2019-05-11 |
SG10202002293XA (en) | 2020-05-28 |
JP2015220458A (en) | 2015-12-07 |
TW201608612A (en) | 2016-03-01 |
US20180010250A1 (en) | 2018-01-11 |
CN105088197B (en) | 2019-04-02 |
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