SG10201503073QA - Hole doping of graphene - Google Patents
Hole doping of grapheneInfo
- Publication number
- SG10201503073QA SG10201503073QA SG10201503073QA SG10201503073QA SG10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA
- Authority
- SG
- Singapore
- Prior art keywords
- graphene
- hole doping
- doping
- hole
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910021389 graphene Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Formation Of Insulating Films (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34388610P | 2010-05-05 | 2010-05-05 | |
US40497510P | 2010-10-12 | 2010-10-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201503073QA true SG10201503073QA (en) | 2015-06-29 |
Family
ID=44903910
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012077046A SG184904A1 (en) | 2010-05-05 | 2011-05-05 | Hole doping of graphene |
SG10201503073QA SG10201503073QA (en) | 2010-05-05 | 2011-05-05 | Hole doping of graphene |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012077046A SG184904A1 (en) | 2010-05-05 | 2011-05-05 | Hole doping of graphene |
Country Status (9)
Country | Link |
---|---|
US (1) | US9269773B2 (en) |
EP (1) | EP2567403A4 (en) |
JP (1) | JP5814348B2 (en) |
KR (1) | KR20130098884A (en) |
CN (1) | CN103026490B (en) |
BR (1) | BR112012028292A2 (en) |
RU (1) | RU2565336C2 (en) |
SG (2) | SG184904A1 (en) |
WO (1) | WO2011139236A1 (en) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5545735B2 (en) * | 2010-07-20 | 2014-07-09 | 日本電信電話株式会社 | Magnetoelectric effect element |
KR20120134220A (en) * | 2011-06-01 | 2012-12-12 | 삼성전자주식회사 | Ferromagnetic graphene and spin valve device adopting the same |
CN103718296B (en) * | 2011-07-29 | 2016-09-07 | 富士通株式会社 | The manufacture method of graphene nano net and the manufacture method of semiconductor device |
US9202945B2 (en) * | 2011-12-23 | 2015-12-01 | Nokia Technologies Oy | Graphene-based MIM diode and associated methods |
JP5689828B2 (en) * | 2012-02-01 | 2015-03-25 | 日本電信電話株式会社 | Manufacturing method of graphene pn junction |
KR101264357B1 (en) | 2012-03-30 | 2013-05-14 | 한국전기연구원 | Transparent conductive graphene films modified by graphene oxide nanosheets |
KR101349357B1 (en) * | 2012-04-03 | 2014-01-16 | 한국전기연구원 | Transparent conductive graphene films modified by metal oxides |
US9174413B2 (en) | 2012-06-14 | 2015-11-03 | International Business Machines Corporation | Graphene based structures and methods for shielding electromagnetic radiation |
US9413075B2 (en) * | 2012-06-14 | 2016-08-09 | Globalfoundries Inc. | Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies |
ES2395949B1 (en) * | 2012-09-18 | 2013-12-26 | Fundació Institut De Ciències Fotòniques | ELECTRONIC PLATFORM THAT INCLUDES A CRYSTAL OF TYPE ABO3 AND GRAPHENE, METHOD FOR MANUFACTURING AND CHIP THAT INCLUDES THE SAME |
US20140084253A1 (en) | 2012-09-25 | 2014-03-27 | International Business Machines Corporation | Transparent conductive electrode stack containing carbon-containing material |
US8906787B2 (en) * | 2012-10-05 | 2014-12-09 | Cornell University | Thin film compositions and methods |
GB201302556D0 (en) | 2013-02-14 | 2013-03-27 | Univ Manchester | Thermoelectric materials and devices |
KR101541529B1 (en) * | 2013-02-26 | 2015-08-05 | 서울대학교산학협력단 | Graphene device and manufacturing mehtod of thereof |
WO2014146017A1 (en) * | 2013-03-15 | 2014-09-18 | University Of Utah Research Foundation | Graphene-based superconductors |
IL225976A (en) | 2013-04-25 | 2015-02-26 | Rafi Kalish | Molybdenum trioxide-coated hydrogen-terminated diamond surface and uses thereof |
CN103280398B (en) * | 2013-05-30 | 2016-02-03 | 中国电子科技集团公司第十三研究所 | A kind of method preparing horizontal graphene PN junction |
CN103515535A (en) * | 2013-10-10 | 2014-01-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparing method of phase-changing memory contact electrode and phase-changing memory contact electrode |
US20160284811A1 (en) * | 2013-11-04 | 2016-09-29 | Massachusetts Institute Of Technology | Electronics including graphene-based hybrid structures |
WO2015126139A1 (en) * | 2014-02-19 | 2015-08-27 | Samsung Electronics Co., Ltd. | Wiring structure and electronic device employing the same |
JP6178267B2 (en) * | 2014-03-13 | 2017-08-09 | 株式会社東芝 | wiring |
KR102255301B1 (en) | 2014-05-19 | 2021-05-24 | 삼성전자주식회사 | Optoelectronic device including ferroelectric material |
WO2016043123A1 (en) * | 2014-09-16 | 2016-03-24 | 国立研究開発法人産業技術総合研究所 | Organic light-emitting element and positive electrode material thereof |
KR102374118B1 (en) | 2014-10-31 | 2022-03-14 | 삼성전자주식회사 | Graphene layer, method of forming the same, device including graphene layer and method of manufacturing the device |
KR102412965B1 (en) * | 2014-12-30 | 2022-06-24 | 삼성전자주식회사 | Electronic device having two dimensional material layer and method of manufacturing the electronic device using inkjet printing |
JP6073530B2 (en) * | 2015-01-28 | 2017-02-01 | 三菱電機株式会社 | Electromagnetic wave detector and electromagnetic wave detector array |
CN106549077B (en) * | 2015-09-18 | 2018-03-02 | 中国科学院物理研究所 | A kind of photoelectric diode device and a kind of method for producing rectifying effect |
CN105355651B (en) * | 2015-10-12 | 2018-02-16 | 河南师范大学 | A kind of negative differential resistance atomic scale nano-device based on boron nitrogen-atoms chain |
CN108701737B (en) * | 2016-02-24 | 2021-10-08 | 三菱电机株式会社 | Electromagnetic wave detector |
CN109417106B (en) * | 2016-07-12 | 2022-04-26 | 三菱电机株式会社 | Electromagnetic wave detector and electromagnetic wave detector array |
JP6799247B2 (en) * | 2016-08-09 | 2020-12-16 | 富士通株式会社 | Semiconductor device |
CN110402373B (en) * | 2017-03-22 | 2021-07-30 | 三菱电机株式会社 | Electromagnetic wave detector, electromagnetic wave detector array, and electromagnetic wave detection method |
CN107316804B (en) * | 2017-07-07 | 2019-07-23 | 西安交通大学 | A kind of preparation method of metal atom doped large area rule epitaxial graphene |
JP6957310B2 (en) * | 2017-10-24 | 2021-11-02 | 東京エレクトロン株式会社 | Semiconductor devices and CMOS transistors |
GB2568110B (en) | 2017-11-07 | 2019-12-04 | Emberion Oy | Photosensitive field-effect transistor |
JP6985596B2 (en) * | 2017-11-30 | 2021-12-22 | 富士通株式会社 | Electronic devices, manufacturing methods and electronic devices for electronic devices |
CN108198746B (en) * | 2017-12-29 | 2020-06-19 | 重庆墨希科技有限公司 | CVD graphene composite doping structure and preparation method thereof |
US20200108584A1 (en) * | 2018-10-04 | 2020-04-09 | Hanwha Aerospace Co.,Ltd | Graphene-based laminate, method of preparing the same, and transparent electrode and electronic device each including the graphene-based laminate |
CN109573995A (en) * | 2018-11-15 | 2019-04-05 | 南京邮电大学 | A kind of method that basic anhydride are grapheme modified |
CN109613030A (en) * | 2018-12-21 | 2019-04-12 | 四川聚创石墨烯科技有限公司 | A method of determining whether carbon material is doping graphene oxide |
CN109801990A (en) * | 2018-12-29 | 2019-05-24 | 山东大学 | A method of photodetector is made using SiC pyrolytic graphite alkene |
CN110426429A (en) * | 2019-08-01 | 2019-11-08 | 电子科技大学 | A kind of chemical sensor array based on two-dimentional glass graphite alkene |
CN114622178B (en) * | 2022-03-15 | 2024-08-06 | 山西师范大学 | Method for regulating and controlling optical and electrical properties of metal oxide and application thereof |
WO2023237561A1 (en) | 2022-06-08 | 2023-12-14 | Paragraf Limited | A thermally stable graphene-containing laminate |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69728410T2 (en) | 1996-08-08 | 2005-05-04 | William Marsh Rice University, Houston | MACROSCOPICALLY MANIPULATED DEVICES MANUFACTURED FROM NANOROE ASSEMBLIES |
RU2228900C1 (en) * | 2003-02-11 | 2004-05-20 | Физико-технический институт им. А.Ф. Иоффе РАН | Method for producing carbon nanostructures |
US8044472B2 (en) | 2003-03-25 | 2011-10-25 | Kulite Semiconductor Products, Inc. | Nanotube and graphene semiconductor structures with varying electrical properties |
US7105390B2 (en) * | 2003-12-30 | 2006-09-12 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
BRPI0402338B1 (en) | 2004-06-16 | 2015-01-06 | Universidad De La República | PROCESS FOR PREPARING MAGNETIC GRAPHIC MATERIALS AND PREPARED MATERIALS |
US8378329B2 (en) | 2007-03-02 | 2013-02-19 | Brookhaven Science Associates, Llc | Nanodevices for spintronics and methods of using same |
JP4669957B2 (en) * | 2007-03-02 | 2011-04-13 | 日本電気株式会社 | Semiconductor device using graphene and method for manufacturing the same |
US7732859B2 (en) | 2007-07-16 | 2010-06-08 | International Business Machines Corporation | Graphene-based transistor |
KR101344493B1 (en) | 2007-12-17 | 2013-12-24 | 삼성전자주식회사 | Single crystalline graphene sheet and process for preparing the same |
US20110104700A1 (en) * | 2008-05-30 | 2011-05-05 | Halloran Philip F | Molecular signature for fibrosis and atrophy |
WO2009158552A1 (en) * | 2008-06-26 | 2009-12-30 | Carben Semicon Limited | Patterned integrated circuit and method of production thereof |
US7952088B2 (en) | 2008-07-11 | 2011-05-31 | International Business Machines Corporation | Semiconducting device having graphene channel |
WO2010008399A1 (en) * | 2008-07-15 | 2010-01-21 | Curtin Lawrence F | Dye doped graphite graphene solar cell on aluminum |
US8257867B2 (en) * | 2008-07-28 | 2012-09-04 | Battelle Memorial Institute | Nanocomposite of graphene and metal oxide materials |
US8698226B2 (en) * | 2008-07-31 | 2014-04-15 | University Of Connecticut | Semiconductor devices, methods of manufacture thereof and articles comprising the same |
US9346680B2 (en) | 2008-09-09 | 2016-05-24 | Battelle Memorial Institute | Mesoporous metal oxide graphene nanocomposite materials |
JP5453045B2 (en) * | 2008-11-26 | 2014-03-26 | 株式会社日立製作所 | Substrate on which graphene layer is grown and electronic / optical integrated circuit device using the same |
US8440496B2 (en) * | 2009-07-08 | 2013-05-14 | Solarmer Energy, Inc. | Solar cell with conductive material embedded substrate |
US8053782B2 (en) * | 2009-08-24 | 2011-11-08 | International Business Machines Corporation | Single and few-layer graphene based photodetecting devices |
US20110070495A1 (en) * | 2009-09-23 | 2011-03-24 | Alliance For Sustainable Energy, Llc | Method of fabricating electrodes including high-capacity, binder-free anodes for lithium-ion batteries |
US9640334B2 (en) * | 2010-01-25 | 2017-05-02 | Nanotek Instruments, Inc. | Flexible asymmetric electrochemical cells using nano graphene platelet as an electrode material |
US8278643B2 (en) * | 2010-02-02 | 2012-10-02 | Searete Llc | Doped graphene electronic materials |
US8344358B2 (en) * | 2010-09-07 | 2013-01-01 | International Business Machines Corporation | Graphene transistor with a self-aligned gate |
US9266738B2 (en) * | 2010-10-15 | 2016-02-23 | The Regents Of The University Of California | Organometallic chemistry of extended periodic II-electron systems |
US8878120B2 (en) * | 2010-12-13 | 2014-11-04 | The Trustees Of The Stevens Institute Of Technology | Active bandgap tuning of graphene for tunable photodetection applications |
US8758947B2 (en) * | 2011-01-11 | 2014-06-24 | Battelle Memorial Institute | Graphene-based battery electrodes having continuous flow paths |
US20130332120A1 (en) * | 2012-06-06 | 2013-12-12 | University Of Southern California | System and method for aggregating reservoir connectivities |
-
2011
- 2011-05-05 KR KR1020127031860A patent/KR20130098884A/en not_active Application Discontinuation
- 2011-05-05 JP JP2013509032A patent/JP5814348B2/en not_active Expired - Fee Related
- 2011-05-05 SG SG2012077046A patent/SG184904A1/en unknown
- 2011-05-05 BR BR112012028292A patent/BR112012028292A2/en not_active IP Right Cessation
- 2011-05-05 EP EP11777667.4A patent/EP2567403A4/en not_active Withdrawn
- 2011-05-05 US US13/696,189 patent/US9269773B2/en active Active
- 2011-05-05 WO PCT/SG2011/000177 patent/WO2011139236A1/en active Application Filing
- 2011-05-05 SG SG10201503073QA patent/SG10201503073QA/en unknown
- 2011-05-05 CN CN201180022146.0A patent/CN103026490B/en not_active Expired - Fee Related
- 2011-05-05 RU RU2012149561/28A patent/RU2565336C2/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
RU2565336C2 (en) | 2015-10-20 |
SG184904A1 (en) | 2012-11-29 |
JP2013537700A (en) | 2013-10-03 |
KR20130098884A (en) | 2013-09-05 |
WO2011139236A1 (en) | 2011-11-10 |
JP5814348B2 (en) | 2015-11-17 |
US20130048952A1 (en) | 2013-02-28 |
EP2567403A4 (en) | 2014-11-19 |
US9269773B2 (en) | 2016-02-23 |
RU2012149561A (en) | 2014-06-10 |
CN103026490A (en) | 2013-04-03 |
CN103026490B (en) | 2016-06-22 |
BR112012028292A2 (en) | 2016-11-01 |
EP2567403A1 (en) | 2013-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201503073QA (en) | Hole doping of graphene | |
GB201104096D0 (en) | Production of graphene | |
EP2709950A4 (en) | Chemically modified graphene | |
SG11201405573WA (en) | Production of graphene | |
GB201016925D0 (en) | Graphene oxide | |
EP2652264A4 (en) | Well perforating with determination of well characteristics | |
EP2780281A4 (en) | Graphene compositions | |
ZA201207252B (en) | Can manufacture | |
TWI562960B (en) | Segmented graphene nanoribbons | |
EP2613071A4 (en) | Hole plug | |
ZA201208514B (en) | Can manufacture | |
GB201215633D0 (en) | Use of autotransformer-like atennas for downhole applications | |
GB201112745D0 (en) | New uses | |
ZA201205621B (en) | Can manufacture | |
GB201004096D0 (en) | Production of polyhydroalkanoates | |
EP2524296A4 (en) | Extending view functionality of application | |
GB201003846D0 (en) | Cablehead | |
ZA201207234B (en) | Combination of organic compounds | |
TWM388611U (en) | Improved structure of light-emitting device | |
TWM388994U (en) | Improved structure of screwdriver | |
TWM401316U (en) | Socks structure | |
GB201011285D0 (en) | Uses of carpet | |
TWM386036U (en) | Structure of freshness-maintaining box | |
TWM401317U (en) | Improved multi-weave structure of socks | |
TWM401294U (en) | Hoe with effect of increasing stability |