SG10201503073QA - Hole doping of graphene - Google Patents

Hole doping of graphene

Info

Publication number
SG10201503073QA
SG10201503073QA SG10201503073QA SG10201503073QA SG10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA
Authority
SG
Singapore
Prior art keywords
graphene
hole doping
doping
hole
Prior art date
Application number
SG10201503073QA
Inventor
Wei Chen
Zhenyu Chen
Thye Shen Andrew Wee
Lanfei Xie
Xiao Wang
Jiatao Sun
Ariando
Original Assignee
Univ Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Singapore filed Critical Univ Singapore
Publication of SG10201503073QA publication Critical patent/SG10201503073QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
SG10201503073QA 2010-05-05 2011-05-05 Hole doping of graphene SG10201503073QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34388610P 2010-05-05 2010-05-05
US40497510P 2010-10-12 2010-10-12

Publications (1)

Publication Number Publication Date
SG10201503073QA true SG10201503073QA (en) 2015-06-29

Family

ID=44903910

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012077046A SG184904A1 (en) 2010-05-05 2011-05-05 Hole doping of graphene
SG10201503073QA SG10201503073QA (en) 2010-05-05 2011-05-05 Hole doping of graphene

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012077046A SG184904A1 (en) 2010-05-05 2011-05-05 Hole doping of graphene

Country Status (9)

Country Link
US (1) US9269773B2 (en)
EP (1) EP2567403A4 (en)
JP (1) JP5814348B2 (en)
KR (1) KR20130098884A (en)
CN (1) CN103026490B (en)
BR (1) BR112012028292A2 (en)
RU (1) RU2565336C2 (en)
SG (2) SG184904A1 (en)
WO (1) WO2011139236A1 (en)

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CN105355651B (en) * 2015-10-12 2018-02-16 河南师范大学 A kind of negative differential resistance atomic scale nano-device based on boron nitrogen-atoms chain
CN108701737B (en) * 2016-02-24 2021-10-08 三菱电机株式会社 Electromagnetic wave detector
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Also Published As

Publication number Publication date
RU2565336C2 (en) 2015-10-20
SG184904A1 (en) 2012-11-29
JP2013537700A (en) 2013-10-03
KR20130098884A (en) 2013-09-05
WO2011139236A1 (en) 2011-11-10
JP5814348B2 (en) 2015-11-17
US20130048952A1 (en) 2013-02-28
EP2567403A4 (en) 2014-11-19
US9269773B2 (en) 2016-02-23
RU2012149561A (en) 2014-06-10
CN103026490A (en) 2013-04-03
CN103026490B (en) 2016-06-22
BR112012028292A2 (en) 2016-11-01
EP2567403A1 (en) 2013-03-13

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