SG10201502024UA - System for directly measuring the depth of a high aspect ratio etched feature on a wafer - Google Patents

System for directly measuring the depth of a high aspect ratio etched feature on a wafer

Info

Publication number
SG10201502024UA
SG10201502024UA SG10201502024UA SG10201502024UA SG10201502024UA SG 10201502024U A SG10201502024U A SG 10201502024UA SG 10201502024U A SG10201502024U A SG 10201502024UA SG 10201502024U A SG10201502024U A SG 10201502024UA SG 10201502024U A SG10201502024U A SG 10201502024UA
Authority
SG
Singapore
Prior art keywords
wafer
depth
aspect ratio
high aspect
directly measuring
Prior art date
Application number
SG10201502024UA
Other languages
English (en)
Inventor
David S Marx
David L Grant
Original Assignee
Rudolph Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rudolph Technologies Inc filed Critical Rudolph Technologies Inc
Publication of SG10201502024UA publication Critical patent/SG10201502024UA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/22—Measuring arrangements characterised by the use of optical techniques for measuring depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG10201502024UA 2009-06-23 2010-06-14 System for directly measuring the depth of a high aspect ratio etched feature on a wafer SG10201502024UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/456,781 US20100321671A1 (en) 2009-06-23 2009-06-23 System for directly measuring the depth of a high aspect ratio etched feature on a wafer

Publications (1)

Publication Number Publication Date
SG10201502024UA true SG10201502024UA (en) 2015-05-28

Family

ID=43354057

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201502024UA SG10201502024UA (en) 2009-06-23 2010-06-14 System for directly measuring the depth of a high aspect ratio etched feature on a wafer
SG2011095718A SG176973A1 (en) 2009-06-23 2010-06-14 System for directly measuring the depth of a high aspect ratio etched feature on a wafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2011095718A SG176973A1 (en) 2009-06-23 2010-06-14 System for directly measuring the depth of a high aspect ratio etched feature on a wafer

Country Status (6)

Country Link
US (1) US20100321671A1 (fr)
EP (1) EP2446468B1 (fr)
KR (1) KR101815325B1 (fr)
CN (1) CN102460672B (fr)
SG (2) SG10201502024UA (fr)
WO (1) WO2010151290A1 (fr)

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* Cited by examiner, † Cited by third party
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WO2011162566A2 (fr) * 2010-06-24 2011-12-29 한국표준과학연구원 Dispositif et procédé pour mesurer un trou d'interconnexion dans une plaquette de silicium
US9305341B2 (en) * 2011-01-21 2016-04-05 Christopher L. Claypool System and method for measurement of through silicon structures
GB2489722B (en) * 2011-04-06 2017-01-18 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
US9714825B2 (en) * 2011-04-08 2017-07-25 Rudolph Technologies, Inc. Wafer shape thickness and trench measurement
JP5252026B2 (ja) * 2011-05-10 2013-07-31 パナソニック株式会社 レーザ溶接装置及びレーザ溶接方法
DE102011051146B3 (de) 2011-06-17 2012-10-04 Precitec Optronik Gmbh Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben
US9252060B2 (en) * 2012-04-01 2016-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of OCD measurement noise by way of metal via slots
DE102012111008B4 (de) 2012-11-15 2014-05-22 Precitec Optronik Gmbh Optisches Messverfahren und optische Messvorrichtung zum Erfassen einer Oberflächentopographie
CN103824788A (zh) * 2012-11-19 2014-05-28 上海华虹宏力半导体制造有限公司 沟槽底部颗粒的检测方法
KR102389680B1 (ko) * 2013-01-23 2022-04-21 루돌프 테크놀로지스 인코퍼레이티드 Tsv 마이크로 제조 프로세스 및 제품들의 특성화
TWI638131B (zh) 2013-06-17 2018-10-11 普雷茨特光電有限公司 用於獲取距離差之光學量測裝置及光學量測方法
CN104576428B (zh) * 2013-10-16 2017-10-24 上海华虹宏力半导体制造有限公司 膜厚度的检测方法
US20160139032A1 (en) * 2014-11-19 2016-05-19 Kla-Tencor Corporation Inspection system and method using an off-axis unobscured objective lens
TWI600876B (zh) * 2015-11-23 2017-10-01 財團法人工業技術研究院 量測系統
CN105891157B (zh) * 2016-03-30 2019-03-12 哈尔滨工业大学 固体材料逆向反射特性测量装置
US10234265B2 (en) 2016-12-12 2019-03-19 Precitec Optronik Gmbh Distance measuring device and method for measuring distances
DE102017126310A1 (de) 2017-11-09 2019-05-09 Precitec Optronik Gmbh Abstandsmessvorrichtung
CN107976151A (zh) * 2017-12-27 2018-05-01 天津中净能源工程股份有限公司 一种地源热泵地理井实际埋深自动检测仪
DE102018130901A1 (de) 2018-12-04 2020-06-04 Precitec Optronik Gmbh Optische Messeinrichtung
CN114791605B (zh) * 2021-01-26 2023-08-22 南京大量数控科技有限公司 印刷电路板内层深度测量光学系统
CN113670204A (zh) * 2021-08-28 2021-11-19 西南石油大学 一种酸液刻蚀体积及支撑剂嵌入深度的测量装置及方法
TWI805083B (zh) 2021-11-18 2023-06-11 財團法人工業技術研究院 異質整合檢測方法與異質整合檢測裝置
WO2023122851A1 (fr) * 2021-12-30 2023-07-06 南京大量数控科技有限公司 Système de fibre optique de profondeur de couche interne destiné à une carte de circuit imprimé
US20240027186A1 (en) * 2022-07-22 2024-01-25 Onto Innovation Inc. Apparatus to characterize substrates and films

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US6909500B2 (en) * 2001-03-26 2005-06-21 Candela Instruments Method of detecting and classifying scratches, particles and pits on thin film disks or wafers
US6885444B2 (en) * 1998-06-10 2005-04-26 Boxer Cross Inc Evaluating a multi-layered structure for voids
US6582619B1 (en) * 1999-09-30 2003-06-24 Lam Research Corporation Methods and apparatuses for trench depth detection and control
US6340602B1 (en) * 1999-12-10 2002-01-22 Sensys Instruments Method of measuring meso-scale structures on wafers
JP2004502954A (ja) * 2000-07-07 2004-01-29 ローベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング 干渉測定装置
WO2002088683A1 (fr) * 2001-04-30 2002-11-07 The Board Of Trustees Of The University Of Illinois Procede et dispositif permettant la caracterisation de couches d'oxyde de silicium ultra-minces au moyen d'une spectroscopie infrarouge a transformee de fourier, a reflectance et polarisation assistee par miroir
US6971791B2 (en) * 2002-03-01 2005-12-06 Boxer Cross, Inc Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough
JP4055527B2 (ja) * 2002-09-20 2008-03-05 日立金属株式会社 焼結体へのマーキング方法及び磁気ヘッド用基板の製造方法
DE102004018454A1 (de) * 2004-04-16 2005-11-03 Infineon Technologies Ag Verfahren und Vorrichtung zum Überwachen des Ätzvorgangs einer regelmässigen Tiefenstruktur in einem Halbleitersubstrat
US7884024B2 (en) * 2005-02-24 2011-02-08 Dcg Systems, Inc. Apparatus and method for optical interference fringe based integrated circuit processing
US20070148792A1 (en) * 2005-12-27 2007-06-28 Marx David S Wafer measurement system and apparatus
WO2008027362A1 (fr) * 2006-08-28 2008-03-06 Advanced Metrology Systems Llc Mesure de structures diffractives par parametrage de caracteristiques spectrales
US8002946B2 (en) * 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US7616328B2 (en) * 2006-11-07 2009-11-10 Rudolph Technologies, Inc. Method and system for providing a high definition triangulation system

Also Published As

Publication number Publication date
CN102460672A (zh) 2012-05-16
KR20120104079A (ko) 2012-09-20
WO2010151290A1 (fr) 2010-12-29
EP2446468A4 (fr) 2016-01-20
US20100321671A1 (en) 2010-12-23
CN102460672B (zh) 2016-04-20
EP2446468B1 (fr) 2020-04-22
SG176973A1 (en) 2012-02-28
EP2446468A1 (fr) 2012-05-02
KR101815325B1 (ko) 2018-01-04

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