SG10201401259UA - Grounded confinement ring having large surface area - Google Patents

Grounded confinement ring having large surface area

Info

Publication number
SG10201401259UA
SG10201401259UA SG10201401259UA SG10201401259UA SG10201401259UA SG 10201401259U A SG10201401259U A SG 10201401259UA SG 10201401259U A SG10201401259U A SG 10201401259UA SG 10201401259U A SG10201401259U A SG 10201401259UA SG 10201401259U A SG10201401259U A SG 10201401259UA
Authority
SG
Singapore
Prior art keywords
surface area
large surface
confinement ring
grounded confinement
grounded
Prior art date
Application number
SG10201401259UA
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201401259UA publication Critical patent/SG10201401259UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422Arrangement for selecting ions or species in the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
SG10201401259UA 2009-04-06 2010-04-06 Grounded confinement ring having large surface area SG10201401259UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16698009P 2009-04-06 2009-04-06
US12/570,359 US9337004B2 (en) 2009-04-06 2009-09-30 Grounded confinement ring having large surface area

Publications (1)

Publication Number Publication Date
SG10201401259UA true SG10201401259UA (en) 2014-05-29

Family

ID=42825211

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2011068277A SG174502A1 (en) 2009-04-06 2010-04-06 Grounded confinement ring having large surface area
SG10201401259UA SG10201401259UA (en) 2009-04-06 2010-04-06 Grounded confinement ring having large surface area

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2011068277A SG174502A1 (en) 2009-04-06 2010-04-06 Grounded confinement ring having large surface area

Country Status (8)

Country Link
US (1) US9337004B2 (en)
EP (1) EP2417627B1 (en)
JP (1) JP5629757B2 (en)
KR (1) KR101727337B1 (en)
CN (1) CN102379029B (en)
SG (2) SG174502A1 (en)
TW (1) TWI524415B (en)
WO (1) WO2010117971A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102201934B1 (en) * 2009-08-31 2021-01-11 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements
US20130122711A1 (en) * 2011-11-10 2013-05-16 Alexei Marakhtanov System, method and apparatus for plasma sheath voltage control
US20140273538A1 (en) 2013-03-15 2014-09-18 Tokyo Electron Limited Non-ambipolar electric pressure plasma uniformity control
CN106920724B (en) * 2015-12-24 2019-05-03 中微半导体设备(上海)股份有限公司 Improve the plasma treatment appts and adjusting method of etching symmetry
CN114664622A (en) * 2020-12-23 2022-06-24 中微半导体设备(上海)股份有限公司 Plasma processing device and adjusting method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6863835B1 (en) * 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
JP2002270598A (en) * 2001-03-13 2002-09-20 Tokyo Electron Ltd Plasma treating apparatus
US6842147B2 (en) * 2002-07-22 2005-01-11 Lam Research Corporation Method and apparatus for producing uniform processing rates
US7972467B2 (en) * 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
KR101001743B1 (en) 2003-11-17 2010-12-15 삼성전자주식회사 Ionized physical vapor deposition apparatus using helical self-resonant coil
CN1914714B (en) * 2004-03-31 2011-09-28 富士通半导体股份有限公司 Substrate processing system and process for fabricating semiconductor device
KR100790392B1 (en) * 2004-11-12 2008-01-02 삼성전자주식회사 Device for making semiconductor
US7837825B2 (en) * 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
WO2008120946A1 (en) * 2007-04-02 2008-10-09 Sosul Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
KR102201934B1 (en) * 2009-08-31 2021-01-11 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements
KR20120068847A (en) * 2009-08-31 2012-06-27 램 리써치 코포레이션 A multi-peripheral ring arrangement for performing plasma confinement

Also Published As

Publication number Publication date
TWI524415B (en) 2016-03-01
JP2012523135A (en) 2012-09-27
WO2010117971A3 (en) 2011-01-13
CN102379029B (en) 2014-04-02
TW201108325A (en) 2011-03-01
KR20120014892A (en) 2012-02-20
SG174502A1 (en) 2011-11-28
US9337004B2 (en) 2016-05-10
JP5629757B2 (en) 2014-11-26
CN102379029A (en) 2012-03-14
EP2417627A2 (en) 2012-02-15
KR101727337B1 (en) 2017-04-14
EP2417627B1 (en) 2018-08-15
EP2417627A4 (en) 2015-09-23
US20100252200A1 (en) 2010-10-07
WO2010117971A2 (en) 2010-10-14

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