SG10201401259UA - Grounded confinement ring having large surface area - Google Patents
Grounded confinement ring having large surface areaInfo
- Publication number
- SG10201401259UA SG10201401259UA SG10201401259UA SG10201401259UA SG10201401259UA SG 10201401259U A SG10201401259U A SG 10201401259UA SG 10201401259U A SG10201401259U A SG 10201401259UA SG 10201401259U A SG10201401259U A SG 10201401259UA SG 10201401259U A SG10201401259U A SG 10201401259UA
- Authority
- SG
- Singapore
- Prior art keywords
- surface area
- large surface
- confinement ring
- grounded confinement
- grounded
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16698009P | 2009-04-06 | 2009-04-06 | |
US12/570,359 US9337004B2 (en) | 2009-04-06 | 2009-09-30 | Grounded confinement ring having large surface area |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201401259UA true SG10201401259UA (en) | 2014-05-29 |
Family
ID=42825211
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201401259UA SG10201401259UA (en) | 2009-04-06 | 2010-04-06 | Grounded confinement ring having large surface area |
SG2011068277A SG174502A1 (en) | 2009-04-06 | 2010-04-06 | Grounded confinement ring having large surface area |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2011068277A SG174502A1 (en) | 2009-04-06 | 2010-04-06 | Grounded confinement ring having large surface area |
Country Status (8)
Country | Link |
---|---|
US (1) | US9337004B2 (en) |
EP (1) | EP2417627B1 (en) |
JP (1) | JP5629757B2 (en) |
KR (1) | KR101727337B1 (en) |
CN (1) | CN102379029B (en) |
SG (2) | SG10201401259UA (en) |
TW (1) | TWI524415B (en) |
WO (1) | WO2010117971A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102240849B1 (en) * | 2009-08-31 | 2021-04-14 | 램 리써치 코포레이션 | Radio frequency (rf) ground return arrangements |
US20130122711A1 (en) * | 2011-11-10 | 2013-05-16 | Alexei Marakhtanov | System, method and apparatus for plasma sheath voltage control |
US20140273538A1 (en) | 2013-03-15 | 2014-09-18 | Tokyo Electron Limited | Non-ambipolar electric pressure plasma uniformity control |
CN106920724B (en) * | 2015-12-24 | 2019-05-03 | 中微半导体设备(上海)股份有限公司 | Improve the plasma treatment appts and adjusting method of etching symmetry |
CN114664622B (en) * | 2020-12-23 | 2024-07-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and adjusting method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5641375A (en) * | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
US6863835B1 (en) * | 2000-04-25 | 2005-03-08 | James D. Carducci | Magnetic barrier for plasma in chamber exhaust |
JP2002270598A (en) * | 2001-03-13 | 2002-09-20 | Tokyo Electron Ltd | Plasma treating apparatus |
US6842147B2 (en) * | 2002-07-22 | 2005-01-11 | Lam Research Corporation | Method and apparatus for producing uniform processing rates |
US7972467B2 (en) * | 2003-04-17 | 2011-07-05 | Applied Materials Inc. | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor |
KR101001743B1 (en) | 2003-11-17 | 2010-12-15 | 삼성전자주식회사 | Ionized physical vapor deposition apparatus using helical self-resonant coil |
WO2005104203A1 (en) * | 2004-03-31 | 2005-11-03 | Fujitsu Limited | Substrate processing system and process for fabricating semiconductor device |
KR100790392B1 (en) * | 2004-11-12 | 2008-01-02 | 삼성전자주식회사 | Device for making semiconductor |
US7837825B2 (en) * | 2005-06-13 | 2010-11-23 | Lam Research Corporation | Confined plasma with adjustable electrode area ratio |
US8980049B2 (en) * | 2007-04-02 | 2015-03-17 | Charm Engineering Co., Ltd. | Apparatus for supporting substrate and plasma etching apparatus having the same |
KR102240849B1 (en) * | 2009-08-31 | 2021-04-14 | 램 리써치 코포레이션 | Radio frequency (rf) ground return arrangements |
SG10201405040PA (en) * | 2009-08-31 | 2014-10-30 | Lam Res Corp | A local plasma confinement and pressure control arrangement and methods thereof |
-
2009
- 2009-09-30 US US12/570,359 patent/US9337004B2/en active Active
-
2010
- 2010-04-06 JP JP2012504756A patent/JP5629757B2/en active Active
- 2010-04-06 SG SG10201401259UA patent/SG10201401259UA/en unknown
- 2010-04-06 KR KR1020117023459A patent/KR101727337B1/en active IP Right Grant
- 2010-04-06 WO PCT/US2010/030021 patent/WO2010117971A2/en active Application Filing
- 2010-04-06 EP EP10762276.3A patent/EP2417627B1/en active Active
- 2010-04-06 SG SG2011068277A patent/SG174502A1/en unknown
- 2010-04-06 CN CN201080014577.8A patent/CN102379029B/en active Active
- 2010-04-06 TW TW099110612A patent/TWI524415B/en active
Also Published As
Publication number | Publication date |
---|---|
CN102379029A (en) | 2012-03-14 |
KR101727337B1 (en) | 2017-04-14 |
WO2010117971A3 (en) | 2011-01-13 |
US20100252200A1 (en) | 2010-10-07 |
TWI524415B (en) | 2016-03-01 |
EP2417627B1 (en) | 2018-08-15 |
CN102379029B (en) | 2014-04-02 |
SG174502A1 (en) | 2011-11-28 |
US9337004B2 (en) | 2016-05-10 |
EP2417627A2 (en) | 2012-02-15 |
EP2417627A4 (en) | 2015-09-23 |
JP5629757B2 (en) | 2014-11-26 |
WO2010117971A2 (en) | 2010-10-14 |
JP2012523135A (en) | 2012-09-27 |
TW201108325A (en) | 2011-03-01 |
KR20120014892A (en) | 2012-02-20 |
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