WO2010117971A3 - Grounded confinement ring having large surface area - Google Patents

Grounded confinement ring having large surface area Download PDF

Info

Publication number
WO2010117971A3
WO2010117971A3 PCT/US2010/030021 US2010030021W WO2010117971A3 WO 2010117971 A3 WO2010117971 A3 WO 2010117971A3 US 2010030021 W US2010030021 W US 2010030021W WO 2010117971 A3 WO2010117971 A3 WO 2010117971A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber portion
confinement chamber
confinement
upper
inner surface
Prior art date
Application number
PCT/US2010/030021
Other languages
French (fr)
Other versions
WO2010117971A2 (en
Inventor
Alexei Marakhtanov
Rajinder Dhindsa
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US16698009P priority Critical
Priority to US61/166,980 priority
Priority to US12/570,359 priority patent/US9337004B2/en
Priority to US12/570,359 priority
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Publication of WO2010117971A2 publication Critical patent/WO2010117971A2/en
Publication of WO2010117971A3 publication Critical patent/WO2010117971A3/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422Arrangement for selecting ions or species in the plasma
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means

Abstract

A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are arranged such that the upper confinement chamber portion inner surface, the lower confinement chamber portion inner surface, the confinement ring inner surface and the electro-static chuck upper surface surround a plasma-forming space that is capable of receiving the material. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are operable to transform the material into a plasma when the electro-static chuck receives the driving signal. The confinement ring has a non-rectangular cross section.
PCT/US2010/030021 2009-04-06 2010-04-06 Grounded confinement ring having large surface area WO2010117971A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US16698009P true 2009-04-06 2009-04-06
US61/166,980 2009-04-06
US12/570,359 US9337004B2 (en) 2009-04-06 2009-09-30 Grounded confinement ring having large surface area
US12/570,359 2009-09-30

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP10762276.3A EP2417627B1 (en) 2009-04-06 2010-04-06 Confinement ring, and wafer processing system comprising the same
CN201080014577.8A CN102379029B (en) 2009-04-06 2010-04-06 Grounded confinement ring having large surface area
JP2012504756A JP5629757B2 (en) 2009-04-06 2010-04-06 Ground confinement ring and wafer processing system with large surface area
KR1020117023459A KR101727337B1 (en) 2009-04-06 2010-04-06 Grounded confinement ring having large surface area
SG2011068277A SG174502A1 (en) 2009-04-06 2010-04-06 Grounded confinement ring having large surface area

Publications (2)

Publication Number Publication Date
WO2010117971A2 WO2010117971A2 (en) 2010-10-14
WO2010117971A3 true WO2010117971A3 (en) 2011-01-13

Family

ID=42825211

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/030021 WO2010117971A2 (en) 2009-04-06 2010-04-06 Grounded confinement ring having large surface area

Country Status (8)

Country Link
US (1) US9337004B2 (en)
EP (1) EP2417627B1 (en)
JP (1) JP5629757B2 (en)
KR (1) KR101727337B1 (en)
CN (1) CN102379029B (en)
SG (2) SG10201401259UA (en)
TW (1) TWI524415B (en)
WO (1) WO2010117971A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4744084A (en) 1986-02-27 1988-05-10 Mentor Graphics Corporation Hardware modeling system and method for simulating portions of electrical circuits
US20130122711A1 (en) * 2011-11-10 2013-05-16 Alexei Marakhtanov System, method and apparatus for plasma sheath voltage control
US20140273538A1 (en) 2013-03-15 2014-09-18 Tokyo Electron Limited Non-ambipolar electric pressure plasma uniformity control
CN106920724B (en) * 2015-12-24 2019-05-03 中微半导体设备(上海)股份有限公司 Improve the plasma treatment appts and adjusting method of etching symmetry

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060102283A1 (en) * 2004-11-12 2006-05-18 Kwon Tae Y Apparatus to manufacture semiconductor
US20060278340A1 (en) * 2005-06-13 2006-12-14 Lam Research Corporation, A Delaware Corporation Confined plasma with adjustable electrode area ratio
US20080314522A1 (en) * 2003-04-17 2008-12-25 Kallol Bera Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6863835B1 (en) * 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
JP2002270598A (en) * 2001-03-13 2002-09-20 Tokyo Electron Ltd Plasma treating apparatus
US6842147B2 (en) * 2002-07-22 2005-01-11 Lam Research Corporation Method and apparatus for producing uniform processing rates
KR101001743B1 (en) 2003-11-17 2010-12-15 삼성전자주식회사 Ionized physical vapor deposition apparatus using helical self-resonant coil
WO2005104203A1 (en) * 2004-03-31 2005-11-03 Fujitsu Limited Substrate processing system and process for fabricating semiconductor device
JP2010524225A (en) * 2007-04-02 2010-07-15 ソースル シーオー エルティディー Substrate support apparatus and plasma etching apparatus including the same
WO2011026126A2 (en) * 2009-08-31 2011-03-03 Lam Research Corporation A multi-peripheral ring arrangement for performing plasma confinement
KR20190102098A (en) * 2009-08-31 2019-09-02 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080314522A1 (en) * 2003-04-17 2008-12-25 Kallol Bera Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
US20060102283A1 (en) * 2004-11-12 2006-05-18 Kwon Tae Y Apparatus to manufacture semiconductor
US20060278340A1 (en) * 2005-06-13 2006-12-14 Lam Research Corporation, A Delaware Corporation Confined plasma with adjustable electrode area ratio

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2417627A4 *

Also Published As

Publication number Publication date
JP5629757B2 (en) 2014-11-26
TWI524415B (en) 2016-03-01
SG10201401259UA (en) 2014-05-29
TW201108325A (en) 2011-03-01
KR101727337B1 (en) 2017-04-14
JP2012523135A (en) 2012-09-27
CN102379029B (en) 2014-04-02
KR20120014892A (en) 2012-02-20
EP2417627B1 (en) 2018-08-15
EP2417627A2 (en) 2012-02-15
US9337004B2 (en) 2016-05-10
SG174502A1 (en) 2011-11-28
US20100252200A1 (en) 2010-10-07
WO2010117971A2 (en) 2010-10-14
CN102379029A (en) 2012-03-14
EP2417627A4 (en) 2015-09-23

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