SE9904798D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SE9904798D0
SE9904798D0 SE9904798A SE9904798A SE9904798D0 SE 9904798 D0 SE9904798 D0 SE 9904798D0 SE 9904798 A SE9904798 A SE 9904798A SE 9904798 A SE9904798 A SE 9904798A SE 9904798 D0 SE9904798 D0 SE 9904798D0
Authority
SE
Sweden
Prior art keywords
terminals
surface portion
semiconductor device
diamond layer
voltage
Prior art date
Application number
SE9904798A
Other languages
Swedish (sv)
Other versions
SE515494C2 (en
SE9904798L (en
Inventor
Hans Bernhoff
Johan Hammersberg
Olof Hjortstam
Mark Irwin
Jan Isberg
Erik Johansson
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE9904798A priority Critical patent/SE515494C2/en
Publication of SE9904798D0 publication Critical patent/SE9904798D0/en
Priority to PCT/SE2000/002591 priority patent/WO2001048796A1/en
Priority to AU25652/01A priority patent/AU2565201A/en
Publication of SE9904798L publication Critical patent/SE9904798L/en
Publication of SE515494C2 publication Critical patent/SE515494C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Abstract

A high voltage semiconductor device comprises two terminals (9, 10) on opposite sides of and interconnected by a solid layer comprising at least a first diamond layer (6, 7, 8), said device being able to block a voltage for at least one direction of a voltage applied across its terminals (9, 10, 15, 16). At least a surface portion (11) of the diamond layer between the terminals is terminated, the termination being such that the Fermi level at said surface portion is at least 0.3 eV above the valence band and at least 0.3 eV below the conduction band, said surface portion (11) surrounding the device between the terminals.
SE9904798A 1999-12-28 1999-12-28 High voltage semiconductor device and method for manufacturing a passivation layer on a high voltage semiconductor device SE515494C2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE9904798A SE515494C2 (en) 1999-12-28 1999-12-28 High voltage semiconductor device and method for manufacturing a passivation layer on a high voltage semiconductor device
PCT/SE2000/002591 WO2001048796A1 (en) 1999-12-28 2000-12-20 Semiconductor device and method for manufacturing a passivation layer on a semiconductor device
AU25652/01A AU2565201A (en) 1999-12-28 2000-12-20 Semiconductor device and method for manufacturing a passivation layer on a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9904798A SE515494C2 (en) 1999-12-28 1999-12-28 High voltage semiconductor device and method for manufacturing a passivation layer on a high voltage semiconductor device

Publications (3)

Publication Number Publication Date
SE9904798D0 true SE9904798D0 (en) 1999-12-28
SE9904798L SE9904798L (en) 2001-06-29
SE515494C2 SE515494C2 (en) 2001-08-13

Family

ID=20418320

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9904798A SE515494C2 (en) 1999-12-28 1999-12-28 High voltage semiconductor device and method for manufacturing a passivation layer on a high voltage semiconductor device

Country Status (3)

Country Link
AU (1) AU2565201A (en)
SE (1) SE515494C2 (en)
WO (1) WO2001048796A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2169709B1 (en) * 2007-07-04 2017-12-20 National Institute for Materials Science Diamond semiconductor device
JP6444718B2 (en) * 2014-12-15 2018-12-26 株式会社東芝 Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2913765B2 (en) * 1990-05-21 1999-06-28 住友電気工業株式会社 Method of forming shot key junction
JP3364119B2 (en) * 1996-09-02 2003-01-08 東京瓦斯株式会社 Hydrogen-terminated diamond MISFET and method for manufacturing the same

Also Published As

Publication number Publication date
WO2001048796A1 (en) 2001-07-05
SE515494C2 (en) 2001-08-13
AU2565201A (en) 2001-07-09
SE9904798L (en) 2001-06-29

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