SE9904710D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SE9904710D0
SE9904710D0 SE9904710A SE9904710A SE9904710D0 SE 9904710 D0 SE9904710 D0 SE 9904710D0 SE 9904710 A SE9904710 A SE 9904710A SE 9904710 A SE9904710 A SE 9904710A SE 9904710 D0 SE9904710 D0 SE 9904710D0
Authority
SE
Sweden
Prior art keywords
material layer
terminals
semiconductor device
opposite sides
layer
Prior art date
Application number
SE9904710A
Other languages
Swedish (sv)
Other versions
SE9904710L (en
Inventor
Hans Bernhoff
Jan Isberg
Erik Johansson
Mark Irwin
Per Skytt
Peter Isberg
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE9904710A priority Critical patent/SE9904710L/en
Publication of SE9904710D0 publication Critical patent/SE9904710D0/en
Priority to PCT/SE2000/002590 priority patent/WO2001047023A1/en
Priority to AU24194/01A priority patent/AU2419401A/en
Publication of SE9904710L publication Critical patent/SE9904710L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide

Abstract

A high voltage semiconductor device comprises a material layer and two terminals (4, 5, 10, 11, 27, 28) on opposite sides of and interconnected by the material layer. The material layer has at least a first layer (2, 8, 21) of semiconducting material of a first type, which has an energy gap between the valence band and the conduction band exceeding 2 eV. The device is able to block a voltage for at least one direction of a voltage applied across its terminals (4, 5, 10, 11, 27, 28). The device comprises an edge portion extending beyond the extension of at least one of the terminals (4, 5, 10, 11, 27, 28), said edge portion comprising a first region (6, 14, 25) of essentially undoped semiconducting material being in contact with and surrounding an edge between the opposite sides of said material layer and having a breakdown field being at least essentially as high as that of the first semiconducting material.
SE9904710A 1999-12-22 1999-12-22 semiconductor device SE9904710L (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE9904710A SE9904710L (en) 1999-12-22 1999-12-22 semiconductor device
PCT/SE2000/002590 WO2001047023A1 (en) 1999-12-22 2000-12-20 High voltage semiconductor
AU24194/01A AU2419401A (en) 1999-12-22 2000-12-20 High voltage semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9904710A SE9904710L (en) 1999-12-22 1999-12-22 semiconductor device

Publications (2)

Publication Number Publication Date
SE9904710D0 true SE9904710D0 (en) 1999-12-22
SE9904710L SE9904710L (en) 2001-06-23

Family

ID=20418242

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9904710A SE9904710L (en) 1999-12-22 1999-12-22 semiconductor device

Country Status (3)

Country Link
AU (1) AU2419401A (en)
SE (1) SE9904710L (en)
WO (1) WO2001047023A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2834828B1 (en) * 2002-01-17 2005-04-29 Alstom MATRIX CONVERTER FOR ELECTRIC POWER TRANSFORMATION
WO2010129804A1 (en) * 2009-05-07 2010-11-11 Lawrence Livermore National Security, Llc Photoconductive switch package

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69219405T2 (en) * 1991-06-21 1997-09-11 Toshiba Kawasaki Kk Semiconductor device with high breakdown voltage
JP2616565B2 (en) * 1994-09-12 1997-06-04 日本電気株式会社 Electronic component assembly
SE9500013D0 (en) * 1995-01-03 1995-01-03 Abb Research Ltd Semiconductor device having a passivation layer
SE9702220D0 (en) * 1997-06-11 1997-06-11 Abb Research Ltd A semiconductor device with a junction termination and a method of production thereof
US5932894A (en) * 1997-06-26 1999-08-03 Abb Research Ltd. SiC semiconductor device comprising a pn junction

Also Published As

Publication number Publication date
WO2001047023A1 (en) 2001-06-28
SE9904710L (en) 2001-06-23
AU2419401A (en) 2001-07-03

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