SE9903481D0 - Magnetic field sensor - Google Patents
Magnetic field sensorInfo
- Publication number
- SE9903481D0 SE9903481D0 SE9903481A SE9903481A SE9903481D0 SE 9903481 D0 SE9903481 D0 SE 9903481D0 SE 9903481 A SE9903481 A SE 9903481A SE 9903481 A SE9903481 A SE 9903481A SE 9903481 D0 SE9903481 D0 SE 9903481D0
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- layers
- ferromagnetic
- substrate
- magnetic field
- Prior art date
Links
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
A magnetoresistive sensor is disclosed, which comprises of at least set of film layers, which set in turn comprises of a substrate layer (NM1), a first ferromagnetic layer (FM1), an intermediate layer (NM2) and a second ferromagnetic layer (FM4) placed on top of each other in a superlattice structure. The first ferromagnetic layer (FM1), preferably formed of iron, has a magnetisation parallel to the layer, in-plane, while the second ferromagnetic layer (FM4), formed of cobalt, has a magnetisation substantially perpendicular to the layer, out-of-plane. The ferromagnetic layers (FM1, FM4) are preferably tetragonally distorted epitaxially grown crystals, which are grown on the substrate and intermediate layers (NM1, NM2), respectively. The substrate and intermediate layers (NM1, NM2) are preferably crystalline layers of V, Cu, Ag, Au, Pd, Pt, Rh, Ru or Ir, which causes a distortion of the Fe layer corresponding to a c/a ratio of between 0.80 and 0.96 and of the Co layer corresponding to a c/a ratio of between 0.78 and 0.96. All layers are preferably very thin, most preferably less than 6-7 atomic layers.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9903481A SE9903481D0 (en) | 1999-09-27 | 1999-09-27 | Magnetic field sensor |
| PCT/SE2000/001828 WO2001023903A1 (en) | 1999-09-27 | 2000-09-20 | Magnetic field sensor |
| AU76964/00A AU7696400A (en) | 1999-09-27 | 2000-09-20 | Magnetic field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9903481A SE9903481D0 (en) | 1999-09-27 | 1999-09-27 | Magnetic field sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE9903481D0 true SE9903481D0 (en) | 1999-09-27 |
Family
ID=20417159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9903481A SE9903481D0 (en) | 1999-09-27 | 1999-09-27 | Magnetic field sensor |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU7696400A (en) |
| SE (1) | SE9903481D0 (en) |
| WO (1) | WO2001023903A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002099905A1 (en) * | 2001-05-31 | 2002-12-12 | National Institute Of Advanced Industrial Science And Technology | Tunnel magnetoresistance element |
| US6801412B2 (en) | 2002-04-19 | 2004-10-05 | International Business Machines Corporation | Method and apparatus for improved pinning strength for self-pinned giant magnetoresistive heads |
| US6781798B2 (en) | 2002-07-15 | 2004-08-24 | International Business Machines Corporation | CPP sensor with dual self-pinned AP pinned layer structures |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3320079B2 (en) * | 1991-03-22 | 2002-09-03 | ティーディーケイ株式会社 | Magnetic laminate and magnetoresistive element |
| EP0506433B2 (en) * | 1991-03-29 | 2007-08-01 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| JP3285937B2 (en) * | 1992-06-23 | 2002-05-27 | ティーディーケイ株式会社 | Magnetic multilayer film, magnetoresistive variable element, and manufacturing method thereof |
| US5858455A (en) * | 1997-10-09 | 1999-01-12 | International Business Machines Corporation | Method for forming a lateral giant magnetoresistance multilayer for a magnetoresistive sensor |
-
1999
- 1999-09-27 SE SE9903481A patent/SE9903481D0/en unknown
-
2000
- 2000-09-20 AU AU76964/00A patent/AU7696400A/en not_active Abandoned
- 2000-09-20 WO PCT/SE2000/001828 patent/WO2001023903A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| AU7696400A (en) | 2001-04-30 |
| WO2001023903A1 (en) | 2001-04-05 |
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