SE9901026D0 - Capacitor for integrated circuits - Google Patents

Capacitor for integrated circuits

Info

Publication number
SE9901026D0
SE9901026D0 SE9901026A SE9901026A SE9901026D0 SE 9901026 D0 SE9901026 D0 SE 9901026D0 SE 9901026 A SE9901026 A SE 9901026A SE 9901026 A SE9901026 A SE 9901026A SE 9901026 D0 SE9901026 D0 SE 9901026D0
Authority
SE
Sweden
Prior art keywords
capacitor
region
active
substrate
manufacturing
Prior art date
Application number
SE9901026A
Other languages
Swedish (sv)
Other versions
SE9901026L (en
SE522038C2 (en
Inventor
Hans Norstroem
Stefan Nygren
Ola Tylstedt
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9901026A priority Critical patent/SE522038C2/en
Publication of SE9901026L publication Critical patent/SE9901026L/en
Publication of SE9901026D0 publication Critical patent/SE9901026D0/en
Publication of SE522038C2 publication Critical patent/SE522038C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7687—Thin films associated with contacts of capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier

Abstract

A semiconductor component, in particular an NPN bipolar transistor, comprises an active surface region surrounded by thick field oxide and which is partly covered by an electrically isolating surface layer different from the field oxide. A base region within the active region is defined by a lithographically defined opening in the isolating layer. Also claimed are: (i) a process for manufacturing a transistor as above; (ii) a capacitor at the surface of a substrate comprising a dielectric layer over a highly doped buried region; (iii) a process of manufacturing the capacitor above; (iv) a process for producing a free area at a surface of a substrate which is limited by a nitride layer; (v) a side-string structure having conductive silicon contact a border of an active area; and (vi) an integrated circuit, bipolar device and process.
SE9901026A 1999-03-22 1999-03-22 NPN bipolar transistors for radio frequency use SE522038C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE9901026A SE522038C2 (en) 1999-03-22 1999-03-22 NPN bipolar transistors for radio frequency use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9901026A SE522038C2 (en) 1999-03-22 1999-03-22 NPN bipolar transistors for radio frequency use

Publications (3)

Publication Number Publication Date
SE9901026L SE9901026L (en) 1999-03-22
SE9901026D0 true SE9901026D0 (en) 1999-03-22
SE522038C2 SE522038C2 (en) 2004-01-07

Family

ID=20414942

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9901026A SE522038C2 (en) 1999-03-22 1999-03-22 NPN bipolar transistors for radio frequency use

Country Status (1)

Country Link
SE (1) SE522038C2 (en)

Also Published As

Publication number Publication date
SE9901026L (en) 1999-03-22
SE522038C2 (en) 2004-01-07

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Legal Events

Date Code Title Description
NUG Patent has lapsed