SE9800246L - Process for forming an oxide on sic - Google Patents

Process for forming an oxide on sic

Info

Publication number
SE9800246L
SE9800246L SE9800246A SE9800246A SE9800246L SE 9800246 L SE9800246 L SE 9800246L SE 9800246 A SE9800246 A SE 9800246A SE 9800246 A SE9800246 A SE 9800246A SE 9800246 L SE9800246 L SE 9800246L
Authority
SE
Sweden
Prior art keywords
oxide
sic
forming
gas
substrate
Prior art date
Application number
SE9800246A
Other languages
Swedish (sv)
Other versions
SE9800246D0 (en
SE511626C2 (en
Inventor
Christopher I Harris
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE9800246A priority Critical patent/SE511626C2/en
Publication of SE9800246D0 publication Critical patent/SE9800246D0/en
Publication of SE9800246L publication Critical patent/SE9800246L/en
Publication of SE511626C2 publication Critical patent/SE511626C2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/18—Quartz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

An oxide layer is formed on a silicon carbide substrate by heating the substrate first in a reducing gas and then in an oxidizing gas. The reducing gas is preferably hydrogen and the temperature is above 700 deg C. The oxidizing gas is preferably (wet) oxygen.
SE9800246A 1998-01-29 1998-01-29 Forming an oxide layer on a silicon carbide substrate SE511626C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE9800246A SE511626C2 (en) 1998-01-29 1998-01-29 Forming an oxide layer on a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9800246A SE511626C2 (en) 1998-01-29 1998-01-29 Forming an oxide layer on a silicon carbide substrate

Publications (3)

Publication Number Publication Date
SE9800246D0 SE9800246D0 (en) 1998-01-29
SE9800246L true SE9800246L (en) 1999-07-30
SE511626C2 SE511626C2 (en) 1999-11-01

Family

ID=20410015

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9800246A SE511626C2 (en) 1998-01-29 1998-01-29 Forming an oxide layer on a silicon carbide substrate

Country Status (1)

Country Link
SE (1) SE511626C2 (en)

Also Published As

Publication number Publication date
SE9800246D0 (en) 1998-01-29
SE511626C2 (en) 1999-11-01

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Legal Events

Date Code Title Description
NUG Patent has lapsed