SE9602191L - Inductors for integrated circuits - Google Patents
Inductors for integrated circuitsInfo
- Publication number
- SE9602191L SE9602191L SE9602191A SE9602191A SE9602191L SE 9602191 L SE9602191 L SE 9602191L SE 9602191 A SE9602191 A SE 9602191A SE 9602191 A SE9602191 A SE 9602191A SE 9602191 L SE9602191 L SE 9602191L
- Authority
- SE
- Sweden
- Prior art keywords
- inductor
- substrate
- quality factor
- reduced
- parasitic capacitance
- Prior art date
Links
- 239000002184 metal Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003071 parasitic effect Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
The quality factor (Q-value) of spiral inductors or coils (305) in IC-circuits is improved by partially removing the semiconducting substrate (301) under the inductor (305) by etching trenches (303), which are refilled with an isolating material. Hence, the losses caused by the substrate (301) are reduced and the quality factor is increased accordingly. The parasitic capacitance to the substrate (301) is also reduced, increasing the resonance frequency of the inductor (305) and extending the useful frequency range of operation of the inductor. Furthermore, by utilizing the uppermost metals of a multi-layer metal structure in the circuit, additional reduction of losses and parasitic capacitance are also achieved. The use of trenches (303) under metal patterns for loss and capacitance reduction is not limited to spiral inductor layouts, and can be used for any metal line, bond pad, etc.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9602191A SE510443C2 (en) | 1996-05-31 | 1996-05-31 | Inductors for integrated circuits |
PCT/SE1997/000954 WO1997045873A1 (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
CN97195081A CN1220778A (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
EP97926345A EP0902974A1 (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
AU31130/97A AU3113097A (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
JP09542247A JP2000511350A (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
KR1019980708627A KR100298480B1 (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
CA002256763A CA2256763A1 (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9602191A SE510443C2 (en) | 1996-05-31 | 1996-05-31 | Inductors for integrated circuits |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9602191D0 SE9602191D0 (en) | 1996-05-31 |
SE9602191L true SE9602191L (en) | 1997-12-01 |
SE510443C2 SE510443C2 (en) | 1999-05-25 |
Family
ID=20402861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9602191A SE510443C2 (en) | 1996-05-31 | 1996-05-31 | Inductors for integrated circuits |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0902974A1 (en) |
JP (1) | JP2000511350A (en) |
KR (1) | KR100298480B1 (en) |
CN (1) | CN1220778A (en) |
AU (1) | AU3113097A (en) |
CA (1) | CA2256763A1 (en) |
SE (1) | SE510443C2 (en) |
WO (1) | WO1997045873A1 (en) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU8369398A (en) | 1997-07-11 | 1999-02-08 | Telefonaktiebolaget Lm Ericsson (Publ) | A process for manufacturing ic-components to be used at radio frequencies |
KR19990055422A (en) * | 1997-12-27 | 1999-07-15 | 정선종 | Inductor device on silicon substrate and manufacturing method thereof |
JP3942264B2 (en) | 1998-03-11 | 2007-07-11 | 富士通株式会社 | Inductance element formed on a semiconductor substrate |
DE19810825A1 (en) * | 1998-03-12 | 1999-09-16 | Siemens Ag | Electronic integrated circuit |
EP0966040A1 (en) * | 1998-06-19 | 1999-12-22 | International Business Machines Corporation | Passive component above isolation trenches |
KR20000011585A (en) * | 1998-07-28 | 2000-02-25 | 윤덕용 | Semiconductor device and method for manufacturing the same |
US6278186B1 (en) * | 1998-08-26 | 2001-08-21 | Intersil Corporation | Parasitic current barriers |
DE19910983A1 (en) * | 1999-03-12 | 2000-09-21 | Bosch Gmbh Robert | Device and method for determining the lateral undercut of a structured surface layer |
WO2001004953A1 (en) * | 1999-07-08 | 2001-01-18 | Korea Advanced Institute Of Science And Technology | Method for manufacturing a semiconductor device having a metal layer floating over a substrate |
DE19944306B4 (en) * | 1999-09-15 | 2005-05-19 | Infineon Technologies Ag | Integrated semiconductor integrated coil circuit and method of making the same |
SG98398A1 (en) | 2000-05-25 | 2003-09-19 | Inst Of Microelectronics | Integrated circuit inductor |
FR2810451A1 (en) * | 2000-06-20 | 2001-12-21 | Koninkl Philips Electronics Nv | INTEGRATED CIRCUIT INCLUDING A HIGH QUALITY FACTOR INDUCTIVE ELEMENT AND HAVING HIGH COMPACITY |
KR20020014225A (en) * | 2000-08-17 | 2002-02-25 | 박종섭 | Integrated device having insulator layer in trench overlapped with fine inductor and method for foming the same |
DE10041084A1 (en) * | 2000-08-22 | 2002-03-14 | Infineon Technologies Ag | Method for forming a dielectric region in a semiconductor substrate |
DE10041691A1 (en) | 2000-08-24 | 2002-03-14 | Infineon Technologies Ag | A semiconductor device |
EP1213762A1 (en) * | 2000-12-05 | 2002-06-12 | Koninklijke Philips Electronics N.V. | Electrical device isolation structure |
DE10163460B4 (en) * | 2001-12-21 | 2010-05-27 | Austriamicrosystems Ag | Silicon substrate with an insulating layer and arrangement with a silicon substrate with an insulating layer |
AU2002342925A1 (en) | 2001-12-13 | 2003-07-09 | Austriamicrosystems Ag | Silicon substrate having an insulating layer with partial regions and a corresponding assembly |
DE102004022139B4 (en) * | 2004-05-05 | 2007-10-18 | Atmel Germany Gmbh | A method for producing a spiral inductance on a substrate and a device produced by such a method |
JP3927565B2 (en) * | 2004-06-25 | 2007-06-13 | インターナショナル・ビジネス・マシーンズ・コーポレーション | On-chip inductor with magnetic core |
CN101149761B (en) * | 2006-09-20 | 2012-02-08 | 爱斯泰克(上海)高频通讯技术有限公司 | Double pi asymmetrical model parameter extraction method for silicon base spiral inductor equivalent circuit |
CN102208405B (en) * | 2010-08-24 | 2015-11-25 | 华东师范大学 | planar spiral inductor |
CN102456612A (en) * | 2010-10-27 | 2012-05-16 | 上海华虹Nec电子有限公司 | Manufacturing method and structure of semiconductor integrated inductor |
JP5699905B2 (en) * | 2011-10-28 | 2015-04-15 | 株式会社デンソー | Semiconductor device |
CN114823638A (en) * | 2022-04-27 | 2022-07-29 | 电子科技大学 | Integrated inductance structure with low parasitic capacitance |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0377360A (en) * | 1989-08-18 | 1991-04-02 | Mitsubishi Electric Corp | Semiconductor device |
US5336921A (en) * | 1992-01-27 | 1994-08-09 | Motorola, Inc. | Vertical trench inductor |
WO1994017558A1 (en) * | 1993-01-29 | 1994-08-04 | The Regents Of The University Of California | Monolithic passive component |
WO1996002070A2 (en) * | 1994-07-12 | 1996-01-25 | National Semiconductor Corporation | Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit |
US5446311A (en) * | 1994-09-16 | 1995-08-29 | International Business Machines Corporation | High-Q inductors in silicon technology without expensive metalization |
-
1996
- 1996-05-31 SE SE9602191A patent/SE510443C2/en not_active IP Right Cessation
-
1997
- 1997-05-30 WO PCT/SE1997/000954 patent/WO1997045873A1/en not_active Application Discontinuation
- 1997-05-30 CN CN97195081A patent/CN1220778A/en active Pending
- 1997-05-30 CA CA002256763A patent/CA2256763A1/en not_active Abandoned
- 1997-05-30 JP JP09542247A patent/JP2000511350A/en not_active Abandoned
- 1997-05-30 EP EP97926345A patent/EP0902974A1/en not_active Withdrawn
- 1997-05-30 KR KR1019980708627A patent/KR100298480B1/en not_active IP Right Cessation
- 1997-05-30 AU AU31130/97A patent/AU3113097A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CA2256763A1 (en) | 1997-12-04 |
KR100298480B1 (en) | 2001-08-07 |
SE510443C2 (en) | 1999-05-25 |
WO1997045873A1 (en) | 1997-12-04 |
JP2000511350A (en) | 2000-08-29 |
AU3113097A (en) | 1998-01-05 |
SE9602191D0 (en) | 1996-05-31 |
KR20000010660A (en) | 2000-02-25 |
CN1220778A (en) | 1999-06-23 |
EP0902974A1 (en) | 1999-03-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed | ||
NUG | Patent has lapsed |