SE9302222L - Mikrovågsapparat för plasmaprocesser - Google Patents

Mikrovågsapparat för plasmaprocesser

Info

Publication number
SE9302222L
SE9302222L SE9302222A SE9302222A SE9302222L SE 9302222 L SE9302222 L SE 9302222L SE 9302222 A SE9302222 A SE 9302222A SE 9302222 A SE9302222 A SE 9302222A SE 9302222 L SE9302222 L SE 9302222L
Authority
SE
Sweden
Prior art keywords
plasma
microwave
generation
functions
vacuum
Prior art date
Application number
SE9302222A
Other languages
English (en)
Other versions
SE9302222D0 (sv
SE500740C2 (sv
Inventor
Ladislav Bardos
Soeren Berg
Original Assignee
Ladislav Bardos
Soeren Berg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ladislav Bardos, Soeren Berg filed Critical Ladislav Bardos
Priority to SE9302222A priority Critical patent/SE500740C2/sv
Publication of SE9302222D0 publication Critical patent/SE9302222D0/sv
Publication of SE9302222L publication Critical patent/SE9302222L/sv
Publication of SE500740C2 publication Critical patent/SE500740C2/sv

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/274Diamond only using microwave discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/277Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C23F4/04Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by physical dissolution
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
SE9302222A 1993-06-28 1993-06-28 Mikrovågsapparat för plasmaprocesser SE500740C2 (sv)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE9302222A SE500740C2 (sv) 1993-06-28 1993-06-28 Mikrovågsapparat för plasmaprocesser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9302222A SE500740C2 (sv) 1993-06-28 1993-06-28 Mikrovågsapparat för plasmaprocesser

Publications (3)

Publication Number Publication Date
SE9302222D0 SE9302222D0 (sv) 1993-06-28
SE9302222L true SE9302222L (sv) 1994-08-22
SE500740C2 SE500740C2 (sv) 1994-08-22

Family

ID=20390435

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9302222A SE500740C2 (sv) 1993-06-28 1993-06-28 Mikrovågsapparat för plasmaprocesser

Country Status (1)

Country Link
SE (1) SE500740C2 (sv)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
US9637838B2 (en) 2010-12-23 2017-05-02 Element Six Limited Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021865D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
CN114457323B (zh) * 2022-04-12 2022-08-02 成都纽曼和瑞微波技术有限公司 一种反应腔装置及微波等离子体气相沉积系统

Also Published As

Publication number Publication date
SE9302222D0 (sv) 1993-06-28
SE500740C2 (sv) 1994-08-22

Similar Documents

Publication Publication Date Title
US5262610A (en) Low particulate reliability enhanced remote microwave plasma discharge device
US3108900A (en) Apparatus and process for producing coatings on metals
KR100219873B1 (ko) 플라즈마 가공을 위한 장치 및 방법
US5415819A (en) Low pressure plasma treatment method
SE9302222L (sv) Mikrovågsapparat för plasmaprocesser
KR900005854A (ko) 플라즈마 처리방법 및 장치
JPS6417870A (en) Manufacture of carbon
EP0376546A3 (en) Processes depending on plasma generation
KR970021370A (ko) 플라즈마 cvd장치 및 방법과 드라이에칭장치 및 방법
KR960015761A (ko) 플라즈마처리장치
CA2303260A1 (en) Plasma enhanced chemical deposition with low vapor pressure compounds
EP0343602A3 (en) Microwave plasma treating apparatus
Belkind et al. Plasma cleaning of surfaces
KR960035860A (ko) 스퍼터링 공정 웨이퍼 세척 방법
WO1995006762A3 (de) Dampfphasenreinigung
TW353204B (en) Method of treating semiconductor substrate
US6773776B2 (en) Components having enhanced adhesion between parts
JPS5647572A (en) Etching method of indium oxide film
JPS55101853A (en) Method of fabricating comparison electrode with fet
WO2002078749A2 (en) Atmospheric pressure rf plasma source using ambient air and complex molecular gases
EP1681367A4 (en) FIMBILDUNGSVORRICHTUNG AND FILMBILDUNGSverfahrens
Mozetič et al. Atomic oxygen concentration in a flowing post-discharge reactor
JPS5647569A (en) Plasma etching method
JPS6124467B2 (sv)
JPS5732637A (en) Dry etching apparatus