SE9000927D0 - Saett att axiellt instaella baerarlivslaengden - Google Patents

Saett att axiellt instaella baerarlivslaengden

Info

Publication number
SE9000927D0
SE9000927D0 SE9000927A SE9000927A SE9000927D0 SE 9000927 D0 SE9000927 D0 SE 9000927D0 SE 9000927 A SE9000927 A SE 9000927A SE 9000927 A SE9000927 A SE 9000927A SE 9000927 D0 SE9000927 D0 SE 9000927D0
Authority
SE
Sweden
Prior art keywords
substrate
life
profile
recombination
concn
Prior art date
Application number
SE9000927A
Other languages
English (en)
Other versions
SE9000927L (sv
Inventor
F Beeler
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Publication of SE9000927D0 publication Critical patent/SE9000927D0/sv
Publication of SE9000927L publication Critical patent/SE9000927L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SE9000927A 1989-04-13 1990-03-15 Saett att axiellt instaella baerarlivslaengden SE9000927L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3912056A DE3912056A1 (de) 1989-04-13 1989-04-13 Verfahren zum axialen einstellen der traegerlebensdauer

Publications (2)

Publication Number Publication Date
SE9000927D0 true SE9000927D0 (sv) 1990-03-15
SE9000927L SE9000927L (sv) 1990-10-14

Family

ID=6378539

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9000927A SE9000927L (sv) 1989-04-13 1990-03-15 Saett att axiellt instaella baerarlivslaengden

Country Status (3)

Country Link
JP (1) JPH0341737A (sv)
DE (1) DE3912056A1 (sv)
SE (1) SE9000927L (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1153262C (zh) * 1998-08-05 2004-06-09 Memc电子材料有限公司 具有非均匀少数载流子寿命分布的单晶硅及其形成工艺
DE10217610B4 (de) 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
JP7385054B2 (ja) * 2020-09-29 2023-11-21 株式会社日立ハイテク 半導体検査装置および半導体試料の検査方法

Also Published As

Publication number Publication date
DE3912056A1 (de) 1990-10-18
JPH0341737A (ja) 1991-02-22
SE9000927L (sv) 1990-10-14

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Legal Events

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Ref document number: 9000927-5

Effective date: 19910815