SE7707114L - PROCEDURE FOR MANUFACTURE OF FIXED-MODE DEVICES - Google Patents

PROCEDURE FOR MANUFACTURE OF FIXED-MODE DEVICES

Info

Publication number
SE7707114L
SE7707114L SE7707114A SE7707114A SE7707114L SE 7707114 L SE7707114 L SE 7707114L SE 7707114 A SE7707114 A SE 7707114A SE 7707114 A SE7707114 A SE 7707114A SE 7707114 L SE7707114 L SE 7707114L
Authority
SE
Sweden
Prior art keywords
procedure
manufacture
fixed
mode devices
devices
Prior art date
Application number
SE7707114A
Other languages
Swedish (sv)
Inventor
V A K Temple
B J Baliga
Original Assignee
Electric Power Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electric Power Res Inst filed Critical Electric Power Res Inst
Publication of SE7707114L publication Critical patent/SE7707114L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
SE7707114A 1977-02-28 1977-06-20 PROCEDURE FOR MANUFACTURE OF FIXED-MODE DEVICES SE7707114L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77271277A 1977-02-28 1977-02-28

Publications (1)

Publication Number Publication Date
SE7707114L true SE7707114L (en) 1978-08-29

Family

ID=25095976

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7707114A SE7707114L (en) 1977-02-28 1977-06-20 PROCEDURE FOR MANUFACTURE OF FIXED-MODE DEVICES

Country Status (5)

Country Link
JP (1) JPS53106584A (en)
CA (1) CA1086866A (en)
DE (1) DE2738152A1 (en)
GB (1) GB1588534A (en)
SE (1) SE7707114L (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3369234D1 (en) * 1982-11-15 1987-02-19 Toshiba Kk Thyristor device protected from an overvoltage
GB8717695D0 (en) * 1987-07-25 1987-09-03 Marconi Electronic Devices Thyristors
DE3927899A1 (en) * 1989-08-24 1991-02-28 Eupec Gmbh & Co Kg Thyristor module with main and auxiliary thyristors - has higher charge carrier life in auxiliary thyristor region
EP0419898B1 (en) * 1989-09-28 2000-05-31 Siemens Aktiengesellschaft Method of enhancing the withstand voltage of a multilayered semiconductor device
DE10330571B8 (en) 2003-07-07 2007-03-08 Infineon Technologies Ag Vertical power semiconductor devices with injection damping agent in the edge area and manufacturing method therefor
CN110265510B (en) * 2019-07-10 2024-04-05 兰州大学 Deep junction avalanche multiplication light-operated thyristor and trigger control system thereof

Also Published As

Publication number Publication date
CA1086866A (en) 1980-09-30
GB1588534A (en) 1981-04-23
DE2738152A1 (en) 1978-08-31
JPS53106584A (en) 1978-09-16

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