SE7501587L - WAY TO IMPROVE THE LINEARITY OF EO DOUBLE-SIDED, LATERAL PHOTO DETECTOR FOR DETERMINATION - Google Patents

WAY TO IMPROVE THE LINEARITY OF EO DOUBLE-SIDED, LATERAL PHOTO DETECTOR FOR DETERMINATION

Info

Publication number
SE7501587L
SE7501587L SE7501587A SE7501587A SE7501587L SE 7501587 L SE7501587 L SE 7501587L SE 7501587 A SE7501587 A SE 7501587A SE 7501587 A SE7501587 A SE 7501587A SE 7501587 L SE7501587 L SE 7501587L
Authority
SE
Sweden
Prior art keywords
linearity
sided
determination
double
improve
Prior art date
Application number
SE7501587A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE388684B (en
Inventor
L-E Lindholm
P G Petersson
Original Assignee
Selcom Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selcom Ab filed Critical Selcom Ab
Priority to SE7501587A priority Critical patent/SE388684B/en
Priority to DE19762604558 priority patent/DE2604558C2/en
Priority to JP51014341A priority patent/JPS5936218B2/en
Publication of SE7501587L publication Critical patent/SE7501587L/en
Publication of SE388684B publication Critical patent/SE388684B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Optical Transform (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
SE7501587A 1975-02-13 1975-02-13 WAY TO IMPROVE THE LINEARITY OF A PHOTO DETECTOR SE388684B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE7501587A SE388684B (en) 1975-02-13 1975-02-13 WAY TO IMPROVE THE LINEARITY OF A PHOTO DETECTOR
DE19762604558 DE2604558C2 (en) 1975-02-13 1976-02-06 Lateral photodetector and process for its manufacture
JP51014341A JPS5936218B2 (en) 1975-02-13 1976-02-12 Method for improving linearity of dual surface lateral photodetector for position determination

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7501587A SE388684B (en) 1975-02-13 1975-02-13 WAY TO IMPROVE THE LINEARITY OF A PHOTO DETECTOR

Publications (2)

Publication Number Publication Date
SE7501587L true SE7501587L (en) 1976-08-16
SE388684B SE388684B (en) 1976-10-11

Family

ID=20323672

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7501587A SE388684B (en) 1975-02-13 1975-02-13 WAY TO IMPROVE THE LINEARITY OF A PHOTO DETECTOR

Country Status (3)

Country Link
JP (1) JPS5936218B2 (en)
DE (1) DE2604558C2 (en)
SE (1) SE388684B (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3792257A (en) * 1972-03-31 1974-02-12 Us Navy Lateral photodetectors

Also Published As

Publication number Publication date
DE2604558A1 (en) 1976-08-26
JPS5936218B2 (en) 1984-09-03
SE388684B (en) 1976-10-11
JPS51107180A (en) 1976-09-22
DE2604558C2 (en) 1986-01-23

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