JPS51107180A - - Google Patents
Info
- Publication number
- JPS51107180A JPS51107180A JP1434176A JP1434176A JPS51107180A JP S51107180 A JPS51107180 A JP S51107180A JP 1434176 A JP1434176 A JP 1434176A JP 1434176 A JP1434176 A JP 1434176A JP S51107180 A JPS51107180 A JP S51107180A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Optical Transform (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE7501587A SE388684B (en) | 1975-02-13 | 1975-02-13 | WAY TO IMPROVE THE LINEARITY OF A PHOTO DETECTOR |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51107180A true JPS51107180A (en) | 1976-09-22 |
JPS5936218B2 JPS5936218B2 (en) | 1984-09-03 |
Family
ID=20323672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51014341A Expired JPS5936218B2 (en) | 1975-02-13 | 1976-02-12 | Method for improving linearity of dual surface lateral photodetector for position determination |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5936218B2 (en) |
DE (1) | DE2604558C2 (en) |
SE (1) | SE388684B (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3792257A (en) * | 1972-03-31 | 1974-02-12 | Us Navy | Lateral photodetectors |
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1975
- 1975-02-13 SE SE7501587A patent/SE388684B/en not_active IP Right Cessation
-
1976
- 1976-02-06 DE DE19762604558 patent/DE2604558C2/en not_active Expired
- 1976-02-12 JP JP51014341A patent/JPS5936218B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2604558A1 (en) | 1976-08-26 |
JPS5936218B2 (en) | 1984-09-03 |
SE388684B (en) | 1976-10-11 |
DE2604558C2 (en) | 1986-01-23 |
SE7501587L (en) | 1976-08-16 |