SE7412776L - - Google Patents
Info
- Publication number
- SE7412776L SE7412776L SE7412776A SE7412776A SE7412776L SE 7412776 L SE7412776 L SE 7412776L SE 7412776 A SE7412776 A SE 7412776A SE 7412776 A SE7412776 A SE 7412776A SE 7412776 L SE7412776 L SE 7412776L
- Authority
- SE
- Sweden
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/028—Dicing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/405,490 US3943013A (en) | 1973-10-11 | 1973-10-11 | Triac with gold diffused boundary |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7412776L true SE7412776L (xx) | 1975-04-14 |
Family
ID=23603919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7412776A SE7412776L (xx) | 1973-10-11 | 1974-10-10 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3943013A (xx) |
JP (1) | JPS5080088A (xx) |
DE (1) | DE2448015C2 (xx) |
FR (1) | FR2247823B1 (xx) |
GB (1) | GB1480116A (xx) |
IE (1) | IE41527B1 (xx) |
SE (1) | SE7412776L (xx) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583386B2 (ja) * | 1975-10-11 | 1983-01-21 | 株式会社日立製作所 | ソウホウコウセイホトサイリスタ |
US4148672A (en) * | 1976-02-02 | 1979-04-10 | General Electric Company | Glass passivated gold diffused rectifier pellet and method for making |
US4043836A (en) * | 1976-05-03 | 1977-08-23 | General Electric Company | Method of manufacturing semiconductor devices |
US4066483A (en) * | 1976-07-07 | 1978-01-03 | Western Electric Company, Inc. | Gate-controlled bidirectional switching device |
US4040877A (en) * | 1976-08-24 | 1977-08-09 | Westinghouse Electric Corporation | Method of making a transistor device |
US4117505A (en) * | 1976-11-19 | 1978-09-26 | Mitsubishi Denki Kabushiki Kaisha | Thyristor with heat sensitive switching characteristics |
JPS5392676A (en) * | 1977-01-25 | 1978-08-14 | Nec Home Electronics Ltd | Semiconductor device |
US4134778A (en) * | 1977-09-02 | 1979-01-16 | General Electric Company | Selective irradiation of thyristors |
KR930003555B1 (ko) * | 1988-12-16 | 1993-05-06 | 산켄 덴끼 가부시끼가이샤 | 반도체 장치의 제조방법 |
GB2292252A (en) * | 1994-08-05 | 1996-02-14 | Texas Instruments Ltd | Rapid turn off semiconductor devices |
DE4439012A1 (de) * | 1994-11-02 | 1996-05-09 | Abb Management Ag | Zweirichtungsthyristor |
US7179475B1 (en) * | 1998-12-04 | 2007-02-20 | Johnson & Johnson Consumer Companies, Inc. | Anhydrous topical skin preparations |
US6238683B1 (en) * | 1998-12-04 | 2001-05-29 | Johnson & Johnson Consumer Companies, Inc. | Anhydrous topical skin preparations |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3275909A (en) * | 1963-12-19 | 1966-09-27 | Gen Electric | Semiconductor switch |
US3350611A (en) * | 1965-02-04 | 1967-10-31 | Gen Electric | Gate fired bidirectional switch |
US3440113A (en) * | 1966-09-19 | 1969-04-22 | Westinghouse Electric Corp | Process for diffusing gold into semiconductor material |
US3617398A (en) * | 1968-10-22 | 1971-11-02 | Ibm | A process for fabricating semiconductor devices having compensated barrier zones between np-junctions |
US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
US3640783A (en) * | 1969-08-11 | 1972-02-08 | Trw Semiconductors Inc | Semiconductor devices with diffused platinum |
US3579815A (en) * | 1969-08-20 | 1971-05-25 | Gen Electric | Process for wafer fabrication of high blocking voltage silicon elements |
US3701696A (en) * | 1969-08-20 | 1972-10-31 | Gen Electric | Process for simultaneously gettering,passivating and locating a junction within a silicon crystal |
JPS5019437B1 (xx) * | 1970-06-08 | 1975-07-07 | ||
JPS5117028B1 (xx) * | 1970-06-15 | 1976-05-29 |
-
1973
- 1973-10-11 US US05/405,490 patent/US3943013A/en not_active Expired - Lifetime
-
1974
- 1974-09-09 IE IE1871/74A patent/IE41527B1/en unknown
- 1974-09-30 GB GB42449/74A patent/GB1480116A/en not_active Expired
- 1974-10-09 DE DE2448015A patent/DE2448015C2/de not_active Expired
- 1974-10-10 SE SE7412776A patent/SE7412776L/xx unknown
- 1974-10-11 FR FR7434265A patent/FR2247823B1/fr not_active Expired
- 1974-10-11 JP JP49116221A patent/JPS5080088A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IE41527B1 (en) | 1980-01-30 |
FR2247823B1 (xx) | 1979-03-16 |
DE2448015A1 (de) | 1975-04-17 |
GB1480116A (en) | 1977-07-20 |
US3943013A (en) | 1976-03-09 |
FR2247823A1 (xx) | 1975-05-09 |
DE2448015C2 (de) | 1984-04-19 |
JPS5080088A (xx) | 1975-06-28 |
IE41527L (en) | 1975-04-01 |