SE516361C2 - LC tank formed on a low resistivity substrate for use in resonators used in microwave filters, oscillators etc., has adjacent strips leading current in opposite directions and arranged so that substrate currents balance out - Google Patents
LC tank formed on a low resistivity substrate for use in resonators used in microwave filters, oscillators etc., has adjacent strips leading current in opposite directions and arranged so that substrate currents balance outInfo
- Publication number
- SE516361C2 SE516361C2 SE0001801A SE0001801A SE516361C2 SE 516361 C2 SE516361 C2 SE 516361C2 SE 0001801 A SE0001801 A SE 0001801A SE 0001801 A SE0001801 A SE 0001801A SE 516361 C2 SE516361 C2 SE 516361C2
- Authority
- SE
- Sweden
- Prior art keywords
- substrate
- loop
- tank
- bands
- tank according
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 239000004020 conductor Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001053 Nickel-zinc ferrite Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
- H03J3/20—Continuous tuning of single resonant circuit by varying inductance only or capacitance only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0001801A SE516361C2 (en) | 2000-05-16 | 2000-05-16 | LC tank formed on a low resistivity substrate for use in resonators used in microwave filters, oscillators etc., has adjacent strips leading current in opposite directions and arranged so that substrate currents balance out |
| PCT/SE2001/001045 WO2001088967A1 (en) | 2000-05-16 | 2001-05-11 | High-q tank |
| AU2001258978A AU2001258978A1 (en) | 2000-05-16 | 2001-05-11 | High-q tank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0001801A SE516361C2 (en) | 2000-05-16 | 2000-05-16 | LC tank formed on a low resistivity substrate for use in resonators used in microwave filters, oscillators etc., has adjacent strips leading current in opposite directions and arranged so that substrate currents balance out |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE0001801D0 SE0001801D0 (sv) | 2000-05-16 |
| SE0001801L SE0001801L (enExample) | 2001-11-17 |
| SE516361C2 true SE516361C2 (en) | 2002-01-08 |
Family
ID=20279686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0001801A SE516361C2 (en) | 2000-05-16 | 2000-05-16 | LC tank formed on a low resistivity substrate for use in resonators used in microwave filters, oscillators etc., has adjacent strips leading current in opposite directions and arranged so that substrate currents balance out |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2001258978A1 (enExample) |
| SE (1) | SE516361C2 (enExample) |
| WO (1) | WO2001088967A1 (enExample) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5173835A (en) * | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
| FI93679C (fi) * | 1991-10-23 | 1995-05-10 | Nokia Mobile Phones Ltd | Taajuusselektiivinen mikroliuskamuuntaja sekä diodisekoitin |
| US5844451A (en) * | 1994-02-25 | 1998-12-01 | Murphy; Michael T. | Circuit element having at least two physically separated coil-layers |
| US5959515A (en) * | 1997-08-11 | 1999-09-28 | Motorola, Inc. | High Q integrated resonator structure |
-
2000
- 2000-05-16 SE SE0001801A patent/SE516361C2/sv not_active IP Right Cessation
-
2001
- 2001-05-11 AU AU2001258978A patent/AU2001258978A1/en not_active Abandoned
- 2001-05-11 WO PCT/SE2001/001045 patent/WO2001088967A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| SE0001801D0 (sv) | 2000-05-16 |
| WO2001088967A1 (en) | 2001-11-22 |
| AU2001258978A1 (en) | 2001-11-26 |
| SE0001801L (enExample) | 2001-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |