SE514380C2 - Integrerad halvledardetektorteleskop med låg energitröskel - Google Patents
Integrerad halvledardetektorteleskop med låg energitröskelInfo
- Publication number
- SE514380C2 SE514380C2 SE9601235A SE9601235A SE514380C2 SE 514380 C2 SE514380 C2 SE 514380C2 SE 9601235 A SE9601235 A SE 9601235A SE 9601235 A SE9601235 A SE 9601235A SE 514380 C2 SE514380 C2 SE 514380C2
- Authority
- SE
- Sweden
- Prior art keywords
- detector
- thin
- detector part
- telescope
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 5
- 125000005842 heteroatom Chemical group 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 57
- 238000000034 method Methods 0.000 description 22
- 239000000243 solution Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 13
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 238000007598 dipping method Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000007664 blowing Methods 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005661 hydrophobic surface Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- -1 TIN Chemical class 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9601235A SE514380C2 (sv) | 1996-03-29 | 1996-03-29 | Integrerad halvledardetektorteleskop med låg energitröskel |
| AU25245/97A AU2524597A (en) | 1996-03-29 | 1997-03-20 | Integrated deltae-e detector telescope |
| EP97916687A EP0896738B1 (de) | 1996-03-29 | 1997-03-20 | INTEGRIERTES dE-E-DETEKTORTELESKOP |
| PCT/SE1997/000475 WO1997037389A1 (en) | 1996-03-29 | 1997-03-20 | Integrated δe-e detector telescope |
| DE69733555T DE69733555T2 (de) | 1996-03-29 | 1997-03-20 | INTEGRIERTES dE-E-DETEKTORTELESKOP |
| US09/159,609 US6541835B1 (en) | 1996-03-29 | 1998-09-24 | Integrated ΔE-E detector telescope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9601235A SE514380C2 (sv) | 1996-03-29 | 1996-03-29 | Integrerad halvledardetektorteleskop med låg energitröskel |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9601235D0 SE9601235D0 (sv) | 1996-03-29 |
| SE9601235L SE9601235L (sv) | 1997-09-30 |
| SE514380C2 true SE514380C2 (sv) | 2001-02-19 |
Family
ID=20402027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9601235A SE514380C2 (sv) | 1996-03-29 | 1996-03-29 | Integrerad halvledardetektorteleskop med låg energitröskel |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6541835B1 (de) |
| EP (1) | EP0896738B1 (de) |
| AU (1) | AU2524597A (de) |
| DE (1) | DE69733555T2 (de) |
| SE (1) | SE514380C2 (de) |
| WO (1) | WO1997037389A1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2845522A1 (fr) * | 2002-10-03 | 2004-04-09 | St Microelectronics Sa | Circuit integre a couche enterree fortement conductrice |
| CN101401208A (zh) * | 2006-03-15 | 2009-04-01 | 皇家飞利浦电子股份有限公司 | 用于辐射检测的半导体器件 |
| US8138583B2 (en) | 2007-02-16 | 2012-03-20 | Cree, Inc. | Diode having reduced on-resistance and associated method of manufacture |
| CN103515466A (zh) * | 2012-06-26 | 2014-01-15 | 北京大学 | 一种复合式δe-e核辐射探测器及其制备方法 |
| US9437604B2 (en) * | 2013-11-01 | 2016-09-06 | Micron Technology, Inc. | Methods and apparatuses having strings of memory cells including a metal source |
| US9341596B1 (en) | 2014-12-22 | 2016-05-17 | International Business Machines Corporation | Annular gas ionization delta E-E detector |
| US10134866B2 (en) | 2017-03-15 | 2018-11-20 | International Business Machines Corporation | Field effect transistor air-gap spacers with an etch-stop layer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1462288A (fr) * | 1965-09-24 | 1966-04-15 | Radiotechnique | Dispositif de détection pour particules |
| JPS5648180A (en) * | 1979-09-27 | 1981-05-01 | Tokyo Niyuukutoronikusu:Kk | Semiconductor detector |
| US4998151A (en) * | 1989-04-13 | 1991-03-05 | General Electric Company | Power field effect devices having small cell size and low contact resistance |
| US5387555A (en) * | 1992-09-03 | 1995-02-07 | Harris Corporation | Bonded wafer processing with metal silicidation |
| US5260233A (en) * | 1992-11-06 | 1993-11-09 | International Business Machines Corporation | Semiconductor device and wafer structure having a planar buried interconnect by wafer bonding |
| US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| US5654226A (en) * | 1994-09-07 | 1997-08-05 | Harris Corporation | Wafer bonding for power devices |
-
1996
- 1996-03-29 SE SE9601235A patent/SE514380C2/sv not_active IP Right Cessation
-
1997
- 1997-03-20 AU AU25245/97A patent/AU2524597A/en not_active Abandoned
- 1997-03-20 WO PCT/SE1997/000475 patent/WO1997037389A1/en active IP Right Grant
- 1997-03-20 DE DE69733555T patent/DE69733555T2/de not_active Expired - Lifetime
- 1997-03-20 EP EP97916687A patent/EP0896738B1/de not_active Expired - Lifetime
-
1998
- 1998-09-24 US US09/159,609 patent/US6541835B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| SE9601235D0 (sv) | 1996-03-29 |
| EP0896738A1 (de) | 1999-02-17 |
| EP0896738B1 (de) | 2005-06-15 |
| WO1997037389A1 (en) | 1997-10-09 |
| DE69733555D1 (de) | 2005-07-21 |
| AU2524597A (en) | 1997-10-22 |
| SE9601235L (sv) | 1997-09-30 |
| DE69733555T2 (de) | 2006-05-11 |
| US6541835B1 (en) | 2003-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4471376A (en) | Amorphous devices and interconnect system and method of fabrication | |
| US4070689A (en) | Semiconductor solar energy device | |
| TWI394283B (zh) | 電子裝置及形成電子裝置之方法 | |
| US20100096674A1 (en) | Methods and systems of thick semiconductor drift detector fabrication | |
| EP0007669B1 (de) | Herstellung eines Infrarot-Detektorelements und so hergestellte Detektorelemente | |
| US3523223A (en) | Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing | |
| SE514380C2 (sv) | Integrerad halvledardetektorteleskop med låg energitröskel | |
| SE524102C2 (sv) | Mikro-hotplate-anordning med integrerad gaskänslig fälteffektsensor | |
| TWI260778B (en) | A semiconductor device and method for manufacturing the same, a zener diode, a consumer electronic product | |
| WO2010045655A1 (en) | Thick semiconductor drift detector fabrication | |
| EP4383357A1 (de) | Lateraler fototransistor | |
| US4238762A (en) | Electrically isolated semiconductor devices on common crystalline substrate | |
| US4442592A (en) | Passivated semiconductor pn junction of high electric strength and process for the production thereof | |
| US7858425B2 (en) | Monolithic nuclear event detector and method of manufacture | |
| TWI246193B (en) | Semiconductor devices using minority carrier controlling substances | |
| US11164987B2 (en) | Si—Ge—Si phototransistor | |
| EP0103767A2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung mittels einer Ionenimplantation und nach diesem Verfahren hergestellte Anordnung | |
| US4416051A (en) | Restoration of high infrared sensitivity in extrinsic silicon detectors | |
| US4246590A (en) | Restoration of high infrared sensitivity in extrinsic silicon detectors | |
| RU2654961C1 (ru) | Способ изготовления многоплощадочного быстродействующего кремниевого pin-фоточувствительного элемента | |
| Canali et al. | Thin Pt and Pd silicide Schottky barriers for silicon solar cells | |
| RU2378738C1 (ru) | Способ изготовления детектора короткопробежных частиц | |
| US20040178461A1 (en) | Dual-sided microstructured, position-sensitive detector | |
| CN219959011U (zh) | 一种含透明电极的碳化硅探测器芯片 | |
| Barasch et al. | Gas microstrip chambers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |