SE505753C3 - Strukturer foer temperatursensorer och infraroeddetektorer - Google Patents
Strukturer foer temperatursensorer och infraroeddetektorerInfo
- Publication number
- SE505753C3 SE505753C3 SE9600097A SE9600097A SE505753C3 SE 505753 C3 SE505753 C3 SE 505753C3 SE 9600097 A SE9600097 A SE 9600097A SE 9600097 A SE9600097 A SE 9600097A SE 505753 C3 SE505753 C3 SE 505753C3
- Authority
- SE
- Sweden
- Prior art keywords
- quantum well
- substrate
- contact layer
- layers
- membrane
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 230000001419 dependent effect Effects 0.000 claims abstract description 4
- 239000012528 membrane Substances 0.000 claims description 25
- 230000004913 activation Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 210000000988 bone and bone Anatomy 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000007707 calorimetry Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Fire-Detection Mechanisms (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9600097A SE505753C2 (sv) | 1996-01-11 | 1996-01-11 | Strukturer för temperatursensorer och infraröddetektorer |
| AU13256/97A AU1325697A (en) | 1996-01-11 | 1997-01-10 | Structures for temperature sensors and infrared detectors |
| AT97900835T ATE398279T1 (de) | 1996-01-11 | 1997-01-10 | Strukturen für temperaturfühler und ir-detektoren |
| JP52514897A JP3573754B2 (ja) | 1996-01-11 | 1997-01-10 | 温度センサー構造体 |
| US09/101,597 US6292089B1 (en) | 1996-01-11 | 1997-01-10 | Structures for temperature sensors and infrared detectors |
| PCT/SE1997/000025 WO1997025600A1 (en) | 1996-01-11 | 1997-01-10 | Structures for temperature sensors and infrared detectors |
| EP97900835A EP0873500B1 (en) | 1996-01-11 | 1997-01-10 | Structures for temperature sensors and infrared detectors |
| DE69738759T DE69738759D1 (de) | 1996-01-11 | 1997-01-10 | Strukturen für temperaturfühler und ir-detektoren |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9600097A SE505753C2 (sv) | 1996-01-11 | 1996-01-11 | Strukturer för temperatursensorer och infraröddetektorer |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| SE9600097D0 SE9600097D0 (sv) | 1996-01-11 |
| SE9600097L SE9600097L (sv) | 1997-07-12 |
| SE505753C3 true SE505753C3 (sv) | 1997-10-06 |
| SE505753C2 SE505753C2 (sv) | 1997-10-06 |
Family
ID=20400991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9600097A SE505753C2 (sv) | 1996-01-11 | 1996-01-11 | Strukturer för temperatursensorer och infraröddetektorer |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6292089B1 (ja) |
| EP (1) | EP0873500B1 (ja) |
| JP (1) | JP3573754B2 (ja) |
| AT (1) | ATE398279T1 (ja) |
| AU (1) | AU1325697A (ja) |
| DE (1) | DE69738759D1 (ja) |
| SE (1) | SE505753C2 (ja) |
| WO (1) | WO1997025600A1 (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0964230A3 (de) * | 1998-06-09 | 2000-01-26 | Heraeus Electro-Nite International N.V. | Elektrischer Widerstand mit wenigstens zwei Anschlusskontaktfeldern auf einem Keramik-Substrat sowie Verfahren zu dessen Herstellung |
| US20070295713A1 (en) * | 2006-06-15 | 2007-12-27 | John Carlton-Foss | System and method for measuring core body temperature |
| EP1912259A1 (en) * | 2006-10-13 | 2008-04-16 | Acreo AB | A quantum dot thermistor structure and use thereof |
| EP1912260B1 (en) * | 2006-10-13 | 2016-12-14 | Acreo Swedish ICT AB | A quantum dot thermistor structure and use thereof |
| SE533025C2 (sv) | 2008-06-25 | 2010-06-08 | Acreo Ab | Strukturer för temperatursensorer och infraröddetektorer |
| SE533944C2 (sv) * | 2008-12-19 | 2011-03-08 | Henry H Radamson | En flerlagersstruktur |
| EP2363887A1 (en) | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Focal plane array and method for manufacturing the same |
| EP2363888A1 (en) | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Focal plane array and method for manufacturing the same |
| JP5110107B2 (ja) * | 2010-03-11 | 2012-12-26 | 株式会社デンソー | 温度センサ及び温度センサの製造方法 |
| JP2013539053A (ja) * | 2010-10-11 | 2013-10-17 | ユーディー ホールディングス，エルエルシー | 超格子量子井戸赤外線検出器 |
| TWI447365B (zh) * | 2011-05-24 | 2014-08-01 | Univ Nat Kaohsiung Applied Sci | Single crystal silicon thermal sensor and its preparation method |
| CN103630247B (zh) * | 2012-08-27 | 2016-04-20 | 南京理工大学 | 非制冷红外探测阵列用自掺杂硅锗/硅多量子阱热敏材料 |
| US10134881B1 (en) | 2017-05-18 | 2018-11-20 | Qualcomm Incorporated | Quantum well thermal sensing for power amplifier |
| CN113739949A (zh) * | 2021-09-06 | 2021-12-03 | 中国工程物理研究院激光聚变研究中心 | 一种基于多层量子阱结构的深低温温度传感器及其制备方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5450053A (en) * | 1985-09-30 | 1995-09-12 | Honeywell Inc. | Use of vanadium oxide in microbolometer sensors |
| US5300915A (en) * | 1986-07-16 | 1994-04-05 | Honeywell Inc. | Thermal sensor |
| US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
| FR2640044B1 (fr) * | 1988-12-06 | 1993-02-12 | Thomson Csf | Dispositif de detection de rayonnements optiques |
| EP0526551B1 (en) * | 1990-04-26 | 1996-12-11 | The Commonwealth Of Australia | Semiconductor film bolometer thermal infrared detector |
| FR2670006B1 (fr) | 1990-11-29 | 1993-03-12 | Thomson Csf | Bolometre electronique a puits quantique et application a un detecteur de rayonnements. |
| US5182670A (en) * | 1991-08-30 | 1993-01-26 | Apa Optics, Inc. | Narrow band algan filter |
| DE69221054T2 (de) * | 1991-09-27 | 1998-01-22 | Texas Instruments Inc | Lese-System und Verfahren für Infrarotdetektoranordnungen |
| US5260225A (en) * | 1991-12-20 | 1993-11-09 | Honeywell Inc. | Integrated infrared sensitive bolometers |
| US5300789A (en) * | 1991-12-24 | 1994-04-05 | At&T Bell Laboratories | Article comprising means for modulating the optical transparency of a semiconductor body, and method of operating the article |
| FR2686456A1 (fr) * | 1992-01-22 | 1993-07-23 | Picogiga Sa | Detecteur infrarouge a puits quantiques. |
| FR2693594B1 (fr) * | 1992-07-07 | 1994-08-26 | Thomson Csf | Détecteur d'ondes électromagnétiques à puits quantiques. |
| US5426412A (en) * | 1992-10-27 | 1995-06-20 | Matsushita Electric Works, Ltd. | Infrared detecting device and infrared detecting element for use in the device |
| JPH06347734A (ja) * | 1993-06-11 | 1994-12-22 | Nec Corp | 面型光スイッチ |
| CA2127596C (en) * | 1993-07-16 | 2003-12-02 | Hui Chun Liu | Multicolour voltage tunable quantum well intersubband infrared photodetector and associated method |
| FR2719417B1 (fr) * | 1994-04-28 | 1996-07-19 | Person Henri Le | Composant à hétérostructure semi-conductrice, commande par la lumière pour la génération d'oscillations hyperfréquences. |
| US5488226A (en) * | 1994-11-18 | 1996-01-30 | The United States Of America As Represented By The Secretary Of The Army | Infrared imaging array based on temperature driven anisotropic optical absorption |
-
1996
- 1996-01-11 SE SE9600097A patent/SE505753C2/sv not_active IP Right Cessation
-
1997
- 1997-01-10 JP JP52514897A patent/JP3573754B2/ja not_active Expired - Lifetime
- 1997-01-10 US US09/101,597 patent/US6292089B1/en not_active Expired - Lifetime
- 1997-01-10 AU AU13256/97A patent/AU1325697A/en not_active Abandoned
- 1997-01-10 EP EP97900835A patent/EP0873500B1/en not_active Expired - Lifetime
- 1997-01-10 AT AT97900835T patent/ATE398279T1/de not_active IP Right Cessation
- 1997-01-10 WO PCT/SE1997/000025 patent/WO1997025600A1/en active Application Filing
- 1997-01-10 DE DE69738759T patent/DE69738759D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6292089B1 (en) | 2001-09-18 |
| SE9600097L (sv) | 1997-07-12 |
| EP0873500A1 (en) | 1998-10-28 |
| JP2000503121A (ja) | 2000-03-14 |
| WO1997025600A1 (en) | 1997-07-17 |
| DE69738759D1 (de) | 2008-07-24 |
| AU1325697A (en) | 1997-08-01 |
| JP3573754B2 (ja) | 2004-10-06 |
| SE9600097D0 (sv) | 1996-01-11 |
| SE505753C2 (sv) | 1997-10-06 |
| ATE398279T1 (de) | 2008-07-15 |
| EP0873500B1 (en) | 2008-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |