SE414096B - SEMICONDUCTOR PRINTERS AND PROCEDURES FOR ITS MANUFACTURING - Google Patents

SEMICONDUCTOR PRINTERS AND PROCEDURES FOR ITS MANUFACTURING

Info

Publication number
SE414096B
SE414096B SE7611020A SE7611020A SE414096B SE 414096 B SE414096 B SE 414096B SE 7611020 A SE7611020 A SE 7611020A SE 7611020 A SE7611020 A SE 7611020A SE 414096 B SE414096 B SE 414096B
Authority
SE
Sweden
Prior art keywords
printers
procedures
semiconductor
manufacturing
semiconductor printers
Prior art date
Application number
SE7611020A
Other languages
Swedish (sv)
Other versions
SE7611020L (en
Inventor
J F Marshall
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of SE7611020L publication Critical patent/SE7611020L/en
Publication of SE414096B publication Critical patent/SE414096B/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
SE7611020A 1975-10-06 1976-10-05 SEMICONDUCTOR PRINTERS AND PROCEDURES FOR ITS MANUFACTURING SE414096B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61986675A 1975-10-06 1975-10-06

Publications (2)

Publication Number Publication Date
SE7611020L SE7611020L (en) 1977-04-07
SE414096B true SE414096B (en) 1980-07-07

Family

ID=24483643

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7611020A SE414096B (en) 1975-10-06 1976-10-05 SEMICONDUCTOR PRINTERS AND PROCEDURES FOR ITS MANUFACTURING

Country Status (7)

Country Link
JP (1) JPS6032993B2 (en)
CA (1) CA1088664A (en)
DE (1) DE2644638A1 (en)
FR (1) FR2327528A1 (en)
GB (1) GB1558815A (en)
IT (1) IT1073874B (en)
SE (1) SE414096B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2844459A1 (en) * 1978-10-12 1980-04-24 Wacker Chemie Gmbh METHOD FOR INCREASING THE SHEET WEIGHT OF SILICON DIOXYD AND USE OF THE SILICON DIOXYDE TREATED BY THE INVENTION
JPS55102277A (en) * 1979-01-29 1980-08-05 Toshiba Corp Semiconductor pressure converter
JPS55112864U (en) * 1979-02-02 1980-08-08
JPS59117271A (en) * 1982-12-24 1984-07-06 Hitachi Ltd Semiconductor device having pressure sensing element and manufacture thereof
JPS59136977A (en) * 1983-01-26 1984-08-06 Hitachi Ltd Pressure sensitive semiconductor device and manufacture thereof
JP3344138B2 (en) 1995-01-30 2002-11-11 株式会社日立製作所 Semiconductor composite sensor
US6056888A (en) * 1999-04-19 2000-05-02 Motorola, Inc. Electronic component and method of manufacture
DE102011006332A1 (en) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Method for producing monocrystalline piezoresistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
GB1399988A (en) * 1972-10-02 1975-07-02 Motorola Inc Silicon pressure sensor
GB1362616A (en) * 1973-03-21 1974-08-07 Welwyn Electric Ltd Semiconductor strain measuring device
US3902926A (en) * 1974-02-21 1975-09-02 Signetics Corp Method of making an ion implanted resistor

Also Published As

Publication number Publication date
GB1558815A (en) 1980-01-09
DE2644638A1 (en) 1977-04-07
FR2327528B1 (en) 1982-05-21
CA1088664A (en) 1980-10-28
JPS6032993B2 (en) 1985-07-31
IT1073874B (en) 1985-04-17
SE7611020L (en) 1977-04-07
DE2644638C2 (en) 1988-01-21
FR2327528A1 (en) 1977-05-06
JPS5245986A (en) 1977-04-12

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