SE396495B - ELECTRONIC MEMORY - Google Patents

ELECTRONIC MEMORY

Info

Publication number
SE396495B
SE396495B SE7502344A SE7502344A SE396495B SE 396495 B SE396495 B SE 396495B SE 7502344 A SE7502344 A SE 7502344A SE 7502344 A SE7502344 A SE 7502344A SE 396495 B SE396495 B SE 396495B
Authority
SE
Sweden
Prior art keywords
electronic memory
electronic
memory
Prior art date
Application number
SE7502344A
Other languages
Swedish (sv)
Other versions
SE7502344L (en
Inventor
W M Regitz
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of SE7502344L publication Critical patent/SE7502344L/xx
Publication of SE396495B publication Critical patent/SE396495B/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408Address circuits
    • G11C11/4087Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
SE7502344A 1969-03-19 1975-03-03 ELECTRONIC MEMORY SE396495B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80842169A 1969-03-19 1969-03-19

Publications (2)

Publication Number Publication Date
SE7502344L SE7502344L (en) 1975-03-03
SE396495B true SE396495B (en) 1977-09-19

Family

ID=25198716

Family Applications (3)

Application Number Title Priority Date Filing Date
SE7003519A SE382275B (en) 1969-03-19 1970-03-17 ELECTRONIC MEMORY ELEMENT.
SE7415002A SE7415002L (en) 1969-03-19 1974-11-29
SE7502344A SE396495B (en) 1969-03-19 1975-03-03 ELECTRONIC MEMORY

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SE7003519A SE382275B (en) 1969-03-19 1970-03-17 ELECTRONIC MEMORY ELEMENT.
SE7415002A SE7415002L (en) 1969-03-19 1974-11-29

Country Status (7)

Country Link
JP (1) JPS5623237B1 (en)
CA (1) CA941964A (en)
CH (1) CH540548A (en)
DE (1) DE2013233A1 (en)
FR (1) FR2037223B1 (en)
GB (1) GB1292265A (en)
SE (3) SE382275B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037015U (en) * 1983-08-18 1985-03-14 丸山 スミエ shirt pocket

Also Published As

Publication number Publication date
JPS5623237B1 (en) 1981-05-29
SE7415002L (en) 1974-11-29
GB1292265A (en) 1972-10-11
FR2037223A1 (en) 1970-12-31
DE2013233A1 (en) 1970-10-01
CH540548A (en) 1973-08-15
FR2037223B1 (en) 1974-05-03
SE7502344L (en) 1975-03-03
CA941964A (en) 1974-02-12
SE382275B (en) 1976-01-19

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