SE396495B - ELECTRONIC MEMORY - Google Patents
ELECTRONIC MEMORYInfo
- Publication number
- SE396495B SE396495B SE7502344A SE7502344A SE396495B SE 396495 B SE396495 B SE 396495B SE 7502344 A SE7502344 A SE 7502344A SE 7502344 A SE7502344 A SE 7502344A SE 396495 B SE396495 B SE 396495B
- Authority
- SE
- Sweden
- Prior art keywords
- electronic memory
- electronic
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80842169A | 1969-03-19 | 1969-03-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7502344L SE7502344L (en) | 1975-03-03 |
SE396495B true SE396495B (en) | 1977-09-19 |
Family
ID=25198716
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7003519A SE382275B (en) | 1969-03-19 | 1970-03-17 | ELECTRONIC MEMORY ELEMENT. |
SE7415002A SE7415002L (en) | 1969-03-19 | 1974-11-29 | |
SE7502344A SE396495B (en) | 1969-03-19 | 1975-03-03 | ELECTRONIC MEMORY |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7003519A SE382275B (en) | 1969-03-19 | 1970-03-17 | ELECTRONIC MEMORY ELEMENT. |
SE7415002A SE7415002L (en) | 1969-03-19 | 1974-11-29 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5623237B1 (en) |
CA (1) | CA941964A (en) |
CH (1) | CH540548A (en) |
DE (1) | DE2013233A1 (en) |
FR (1) | FR2037223B1 (en) |
GB (1) | GB1292265A (en) |
SE (3) | SE382275B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037015U (en) * | 1983-08-18 | 1985-03-14 | 丸山 スミエ | shirt pocket |
-
1970
- 1970-02-19 CA CA075,342A patent/CA941964A/en not_active Expired
- 1970-02-25 GB GB9148/70A patent/GB1292265A/en not_active Expired
- 1970-03-17 SE SE7003519A patent/SE382275B/en unknown
- 1970-03-17 FR FR7009566A patent/FR2037223B1/fr not_active Expired
- 1970-03-19 CH CH417170A patent/CH540548A/en not_active IP Right Cessation
- 1970-03-19 JP JP2279370A patent/JPS5623237B1/ja active Pending
- 1970-03-19 DE DE19702013233 patent/DE2013233A1/de active Pending
-
1974
- 1974-11-29 SE SE7415002A patent/SE7415002L/ not_active Application Discontinuation
-
1975
- 1975-03-03 SE SE7502344A patent/SE396495B/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPS5623237B1 (en) | 1981-05-29 |
SE7415002L (en) | 1974-11-29 |
GB1292265A (en) | 1972-10-11 |
FR2037223A1 (en) | 1970-12-31 |
DE2013233A1 (en) | 1970-10-01 |
CH540548A (en) | 1973-08-15 |
FR2037223B1 (en) | 1974-05-03 |
SE7502344L (en) | 1975-03-03 |
CA941964A (en) | 1974-02-12 |
SE382275B (en) | 1976-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AT309113B (en) | Associative memory | |
BE745669A (en) | PULSEREND VERBRANDINGSSYSTEEM | |
BR6915334D0 (en) | ALPHA-UREIDO-CYCLE-HEXA-DIENYL-ALCOHYLENE-PENICILLINS | |
BE744024A (en) | MANIPULATOR-SYNTHETIZER | |
BE754832A (en) | IMINAZOLINES | |
AT306980B (en) | Aeroionizer | |
FI53797C (en) | KONTINUERLIG BREVKUVERTKOMBINATION | |
BE754732A (en) | KLEURENFOTOGRAFISCH VEELLAGENMATERIAAL | |
BE748247A (en) | ELECTROCARDIOMETER | |
BE759580A (en) | MOMENTSCHAKELAAR | |
IT993515B (en) | ELECTRONIC MULTISELECTOR | |
CH514048A (en) | Component | |
FI53902B (en) | MULTIPPEL ANSLUTNINGSENHET FOER LEDARE | |
FI55130C (en) | VALSLEDARE | |
BE750756A (en) | PHOTOCOMPOSER | |
BE752854A (en) | BETA-MERCAPTO-GESUBSTITUEERDE ALIFATISCHE NITRILLEN | |
BE752151A (en) | FILMCASSETTE | |
BE746342A (en) | MEROCYANINE-KLEURSTOFFEN | |
SE396495B (en) | ELECTRONIC MEMORY | |
BE760026A (en) | MEMORY | |
FI55083C (en) | BELYSNINGSARMATUR | |
AT324166B (en) | SPORTSHOE | |
BE745468A (en) | S-ALCOYL- (METHYL-HEXAHYDRO-1H-AZEPINE) -1-CARBOTHIOLATES | |
BE753662A (en) | EPOXYAZIDOCOMPOSES | |
BE745461A (en) | 1-ACYL-HYDROQUINOLEINS |