SE387186B - Laddningskopplad halvledaranordning med olikformig laddningskoncentration lengs informationskanalen - Google Patents

Laddningskopplad halvledaranordning med olikformig laddningskoncentration lengs informationskanalen

Info

Publication number
SE387186B
SE387186B SE7208053A SE805372A SE387186B SE 387186 B SE387186 B SE 387186B SE 7208053 A SE7208053 A SE 7208053A SE 805372 A SE805372 A SE 805372A SE 387186 B SE387186 B SE 387186B
Authority
SE
Sweden
Prior art keywords
charging
semiconductor device
information channel
concentration along
coupled semiconductor
Prior art date
Application number
SE7208053A
Other languages
English (en)
Swedish (sv)
Inventor
G F Amelio
R H Krambeck
K A Pickar
R H Walden
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE387186B publication Critical patent/SE387186B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
SE7208053A 1971-06-28 1972-06-19 Laddningskopplad halvledaranordning med olikformig laddningskoncentration lengs informationskanalen SE387186B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15750771A 1971-06-28 1971-06-28
US15750971A 1971-06-28 1971-06-28

Publications (1)

Publication Number Publication Date
SE387186B true SE387186B (sv) 1976-08-30

Family

ID=26854197

Family Applications (2)

Application Number Title Priority Date Filing Date
SE7208053A SE387186B (sv) 1971-06-28 1972-06-19 Laddningskopplad halvledaranordning med olikformig laddningskoncentration lengs informationskanalen
SE7509111A SE409773B (sv) 1971-06-28 1975-08-14 Laddningskopplad anordning

Family Applications After (1)

Application Number Title Priority Date Filing Date
SE7509111A SE409773B (sv) 1971-06-28 1975-08-14 Laddningskopplad anordning

Country Status (8)

Country Link
JP (1) JPS5147586B1 (de)
BE (1) BE785468A (de)
DE (1) DE2231616C3 (de)
FR (1) FR2143837B1 (de)
GB (1) GB1376640A (de)
IT (1) IT958489B (de)
NL (1) NL163675C (de)
SE (2) SE387186B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus
FR2259438B1 (de) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
FR2294546A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Dispositif a transfert de charges monophase

Also Published As

Publication number Publication date
DE2231616B2 (de) 1981-02-05
GB1376640A (en) 1974-12-11
DE2231616A1 (de) 1973-01-11
DE2231616C3 (de) 1981-10-01
FR2143837B1 (de) 1974-12-27
BE785468A (fr) 1972-10-16
NL163675C (nl) 1980-09-15
NL163675B (nl) 1980-04-15
IT958489B (it) 1973-10-20
SE7509111L (sv) 1975-08-14
SE409773B (sv) 1979-09-03
JPS5147586B1 (de) 1976-12-15
FR2143837A1 (de) 1973-02-09
NL7208841A (de) 1973-01-02

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