SE383940B - Forfarande for att framstella en halvledaranordning - Google Patents
Forfarande for att framstella en halvledaranordningInfo
- Publication number
- SE383940B SE383940B SE821572A SE821572A SE383940B SE 383940 B SE383940 B SE 383940B SE 821572 A SE821572 A SE 821572A SE 821572 A SE821572 A SE 821572A SE 383940 B SE383940 B SE 383940B
- Authority
- SE
- Sweden
- Prior art keywords
- procedure
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15681371A | 1971-06-25 | 1971-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE383940B true SE383940B (sv) | 1976-04-05 |
Family
ID=22561196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE821572A SE383940B (sv) | 1971-06-25 | 1972-06-21 | Forfarande for att framstella en halvledaranordning |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE785397A (de) |
| CA (1) | CA968468A (de) |
| DE (1) | DE2230172B2 (de) |
| FR (1) | FR2143418B1 (de) |
| GB (1) | GB1363588A (de) |
| IT (1) | IT956761B (de) |
| SE (1) | SE383940B (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4016587A (en) * | 1974-12-03 | 1977-04-05 | International Business Machines Corporation | Raised source and drain IGFET device and method |
| US4102733A (en) * | 1977-04-29 | 1978-07-25 | International Business Machines Corporation | Two and three mask process for IGFET fabrication |
| FR2417853A1 (fr) * | 1978-02-17 | 1979-09-14 | Thomson Csf | Procede de realisation d'un transistor de type mos et transistor realise selon ce procede |
-
1972
- 1972-05-23 CA CA142,806A patent/CA968468A/en not_active Expired
- 1972-06-20 GB GB2882172A patent/GB1363588A/en not_active Expired
- 1972-06-21 SE SE821572A patent/SE383940B/xx unknown
- 1972-06-21 IT IT2601072A patent/IT956761B/it active
- 1972-06-21 DE DE19722230172 patent/DE2230172B2/de active Pending
- 1972-06-23 FR FR7222873A patent/FR2143418B1/fr not_active Expired
- 1972-06-23 BE BE785397A patent/BE785397A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA968468A (en) | 1975-05-27 |
| FR2143418B1 (de) | 1978-03-03 |
| DE2230172A1 (de) | 1972-12-28 |
| IT956761B (it) | 1973-10-10 |
| GB1363588A (en) | 1974-08-14 |
| FR2143418A1 (de) | 1973-02-02 |
| BE785397A (fr) | 1972-10-16 |
| DE2230172B2 (de) | 1975-09-25 |
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