FR2143418A1 - - Google Patents
Info
- Publication number
- FR2143418A1 FR2143418A1 FR7222873A FR7222873A FR2143418A1 FR 2143418 A1 FR2143418 A1 FR 2143418A1 FR 7222873 A FR7222873 A FR 7222873A FR 7222873 A FR7222873 A FR 7222873A FR 2143418 A1 FR2143418 A1 FR 2143418A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15681371A | 1971-06-25 | 1971-06-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2143418A1 true FR2143418A1 (de) | 1973-02-02 |
FR2143418B1 FR2143418B1 (de) | 1978-03-03 |
Family
ID=22561196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7222873A Expired FR2143418B1 (de) | 1971-06-25 | 1972-06-23 |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE785397A (de) |
CA (1) | CA968468A (de) |
DE (1) | DE2230172B2 (de) |
FR (1) | FR2143418B1 (de) |
GB (1) | GB1363588A (de) |
IT (1) | IT956761B (de) |
SE (1) | SE383940B (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2293796A1 (fr) * | 1974-12-03 | 1976-07-02 | Ibm | Transistor a effet de champ a porte isolee a source et drain en relief et son procede de fabrication |
EP0003926A1 (de) * | 1978-02-17 | 1979-09-05 | Thomson-Csf | Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Gateelektrode |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4102733A (en) * | 1977-04-29 | 1978-07-25 | International Business Machines Corporation | Two and three mask process for IGFET fabrication |
-
1972
- 1972-05-23 CA CA142,806A patent/CA968468A/en not_active Expired
- 1972-06-20 GB GB2882172A patent/GB1363588A/en not_active Expired
- 1972-06-21 SE SE821572A patent/SE383940B/xx unknown
- 1972-06-21 DE DE19722230172 patent/DE2230172B2/de active Pending
- 1972-06-21 IT IT2601072A patent/IT956761B/it active
- 1972-06-23 FR FR7222873A patent/FR2143418B1/fr not_active Expired
- 1972-06-23 BE BE785397A patent/BE785397A/xx unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2293796A1 (fr) * | 1974-12-03 | 1976-07-02 | Ibm | Transistor a effet de champ a porte isolee a source et drain en relief et son procede de fabrication |
EP0003926A1 (de) * | 1978-02-17 | 1979-09-05 | Thomson-Csf | Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Gateelektrode |
Also Published As
Publication number | Publication date |
---|---|
BE785397A (fr) | 1972-10-16 |
FR2143418B1 (de) | 1978-03-03 |
IT956761B (it) | 1973-10-10 |
DE2230172B2 (de) | 1975-09-25 |
GB1363588A (en) | 1974-08-14 |
SE383940B (sv) | 1976-04-05 |
CA968468A (en) | 1975-05-27 |
DE2230172A1 (de) | 1972-12-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |