Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
  • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
  • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
  • G11C11/419—Read-write [R-W] circuits
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
  • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
  • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Static Random-Access Memory (AREA)
• Read Only Memory (AREA)
• Dram (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=22895003

Family Applications (1)

Country Status (10)

Families Citing this family (14)

• 1972
  • 1972-03-24 US US00237749A patent/US3714638A/en not_active Expired - Lifetime
• 1973
  • 1973-03-09 AU AU53141/73A patent/AU469739B2/en not_active Expired
  • 1973-03-09 CA CA165,696A patent/CA984969A/en not_active Expired
  • 1973-03-16 IT IT21817/73A patent/IT982562B/it active
  • 1973-03-16 GB GB1275273A patent/GB1423909A/en not_active Expired
  • 1973-03-23 FR FR7310541A patent/FR2177912B1/fr not_active Expired
  • 1973-03-23 NL NLAANVRAGE7304118,A patent/NL180892C/xx not_active IP Right Cessation
  • 1973-03-23 BE BE129218A patent/BE797275A/xx not_active IP Right Cessation
  • 1973-03-23 JP JP3399173A patent/JPS545935B2/ja not_active Expired
  • 1973-03-23 SE SE7304127A patent/SE378151B/xx unknown

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