SE377430B - - Google Patents
Info
- Publication number
- SE377430B SE377430B SE7100029A SE2971A SE377430B SE 377430 B SE377430 B SE 377430B SE 7100029 A SE7100029 A SE 7100029A SE 2971 A SE2971 A SE 2971A SE 377430 B SE377430 B SE 377430B
- Authority
- SE
- Sweden
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34570A | 1970-01-02 | 1970-01-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE377430B true SE377430B (en) | 1975-07-07 |
Family
ID=21691109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7100029A SE377430B (en) | 1970-01-02 | 1971-01-04 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3672948A (en) |
| BE (1) | BE760041A (en) |
| CA (1) | CA931025A (en) |
| CH (1) | CH520525A (en) |
| DE (1) | DE2064470C3 (en) |
| ES (1) | ES386190A1 (en) |
| FR (1) | FR2075030A5 (en) |
| GB (1) | GB1328390A (en) |
| NL (1) | NL7018090A (en) |
| SE (1) | SE377430B (en) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4089735A (en) * | 1968-06-05 | 1978-05-16 | Siemens Aktiengesellschaft | Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors |
| FR2133498B1 (en) * | 1971-04-15 | 1977-06-03 | Labo Electronique Physique | |
| JPS4834798A (en) * | 1971-09-06 | 1973-05-22 | ||
| US3790404A (en) * | 1972-06-19 | 1974-02-05 | Ibm | Continuous vapor processing apparatus and method |
| US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
| US3842794A (en) * | 1973-06-29 | 1974-10-22 | Ibm | Apparatus for high temperature semiconductor processing |
| US3865072A (en) * | 1973-10-18 | 1975-02-11 | Hls Ind | Apparatus for chemically depositing epitaxial layers on semiconductor substrates |
| US4048953A (en) * | 1974-06-19 | 1977-09-20 | Pfizer Inc. | Apparatus for vapor depositing pyrolytic carbon on porous sheets of carbon material |
| GB1507996A (en) * | 1975-06-11 | 1978-04-19 | Pilkington Brothers Ltd | Coating glass |
| US4048955A (en) * | 1975-09-02 | 1977-09-20 | Texas Instruments Incorporated | Continuous chemical vapor deposition reactor |
| GB1523991A (en) * | 1976-04-13 | 1978-09-06 | Bfg Glassgroup | Coating of glass |
| US4084540A (en) * | 1977-05-19 | 1978-04-18 | Discwasher, Inc. | Apparatus for applying lubricating and protective film to phonograph records |
| US4116733A (en) * | 1977-10-06 | 1978-09-26 | Rca Corporation | Vapor phase growth technique of III-V compounds utilizing a preheating step |
| US4171235A (en) * | 1977-12-27 | 1979-10-16 | Hughes Aircraft Company | Process for fabricating heterojunction structures utilizing a double chamber vacuum deposition system |
| US4256053A (en) * | 1979-08-17 | 1981-03-17 | Dozier Alfred R | Chemical vapor reaction system |
| US4256052A (en) * | 1979-10-02 | 1981-03-17 | Rca Corp. | Temperature gradient means in reactor tube of vapor deposition apparatus |
| US4287851A (en) * | 1980-01-16 | 1981-09-08 | Dozier Alfred R | Mounting and excitation system for reaction in the plasma state |
| US4518455A (en) * | 1982-09-02 | 1985-05-21 | At&T Technologies, Inc. | CVD Process |
| US4651673A (en) * | 1982-09-02 | 1987-03-24 | At&T Technologies, Inc. | CVD apparatus |
| IN161171B (en) * | 1982-09-16 | 1987-10-10 | Energy Conversion Devices Inc | |
| US4462333A (en) * | 1982-10-27 | 1984-07-31 | Energy Conversion Devices, Inc. | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
| US4499853A (en) * | 1983-12-09 | 1985-02-19 | Rca Corporation | Distributor tube for CVD reactor |
| US4941429A (en) * | 1988-12-20 | 1990-07-17 | Texas Instruments Incorporated | Semiconductor wafer carrier guide tracks |
| US5378501A (en) * | 1993-10-05 | 1995-01-03 | Foster; Robert F. | Method for chemical vapor deposition of titanium nitride films at low temperatures |
| US5997588A (en) * | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
| DE19704533C2 (en) * | 1997-02-06 | 2000-10-26 | Siemens Ag | Process for creating layers on a surface |
| US6626997B2 (en) | 2001-05-17 | 2003-09-30 | Nathan P. Shapiro | Continuous processing chamber |
| DE10320597A1 (en) * | 2003-04-30 | 2004-12-02 | Aixtron Ag | Method and device for depositing semiconductor layers with two process gases, one of which is preconditioned |
| DE102005045582B3 (en) * | 2005-09-23 | 2007-03-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Apparatus and method for continuous vapor deposition under atmospheric pressure and their use |
| KR20120083712A (en) * | 2011-01-18 | 2012-07-26 | 삼성엘이디 주식회사 | Susceptor and chemical vapor deposition apparatus comprising the same |
| WO2012127305A1 (en) * | 2011-03-21 | 2012-09-27 | Centrotherm Photovoltaics Ag | Gas supply for a processing furnace |
| DE102016101003A1 (en) | 2016-01-21 | 2017-07-27 | Aixtron Se | CVD apparatus with a process chamber housing which can be removed from the reactor housing as an assembly |
| CN115369387A (en) * | 2021-05-18 | 2022-11-22 | 迈络思科技有限公司 | Continuous feed chemical vapor deposition system |
| US20230002906A1 (en) * | 2021-07-01 | 2023-01-05 | Mellanox Technologies, Ltd. | Continuous-feed chemical vapor deposition system |
| US12004308B2 (en) | 2021-05-18 | 2024-06-04 | Mellanox Technologies, Ltd. | Process for laminating graphene-coated printed circuit boards |
| US11963309B2 (en) | 2021-05-18 | 2024-04-16 | Mellanox Technologies, Ltd. | Process for laminating conductive-lubricant coated metals for printed circuit boards |
-
0
- BE BE760041D patent/BE760041A/en unknown
-
1970
- 1970-01-02 US US345A patent/US3672948A/en not_active Expired - Lifetime
- 1970-12-04 ES ES386190A patent/ES386190A1/en not_active Expired
- 1970-12-08 FR FR7045273A patent/FR2075030A5/fr not_active Expired
- 1970-12-08 CH CH1825070A patent/CH520525A/en not_active IP Right Cessation
- 1970-12-11 NL NL7018090A patent/NL7018090A/xx unknown
- 1970-12-21 CA CA101101A patent/CA931025A/en not_active Expired
- 1970-12-22 GB GB6072570A patent/GB1328390A/en not_active Expired
- 1970-12-30 DE DE2064470A patent/DE2064470C3/en not_active Expired
-
1971
- 1971-01-04 SE SE7100029A patent/SE377430B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3672948A (en) | 1972-06-27 |
| DE2064470C3 (en) | 1975-08-14 |
| GB1328390A (en) | 1973-08-30 |
| NL7018090A (en) | 1971-07-06 |
| DE2064470A1 (en) | 1971-07-08 |
| CH520525A (en) | 1972-03-31 |
| DE2064470B2 (en) | 1975-01-09 |
| BE760041A (en) | 1971-05-17 |
| FR2075030A5 (en) | 1971-10-08 |
| ES386190A1 (en) | 1973-03-16 |
| CA931025A (en) | 1973-07-31 |