CA931025A - Method and apparatus for diffusion limited mass transport - Google Patents

Method and apparatus for diffusion limited mass transport

Info

Publication number
CA931025A
CA931025A CA101101A CA101101A CA931025A CA 931025 A CA931025 A CA 931025A CA 101101 A CA101101 A CA 101101A CA 101101 A CA101101 A CA 101101A CA 931025 A CA931025 A CA 931025A
Authority
CA
Canada
Prior art keywords
mass transport
diffusion limited
limited mass
diffusion
transport
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA101101A
Inventor
M. Kenney Donald
R. Garnache Richard
A. Foehring Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA931025A publication Critical patent/CA931025A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CA101101A 1970-01-02 1970-12-21 Method and apparatus for diffusion limited mass transport Expired CA931025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34570A 1970-01-02 1970-01-02

Publications (1)

Publication Number Publication Date
CA931025A true CA931025A (en) 1973-07-31

Family

ID=21691109

Family Applications (1)

Application Number Title Priority Date Filing Date
CA101101A Expired CA931025A (en) 1970-01-02 1970-12-21 Method and apparatus for diffusion limited mass transport

Country Status (10)

Country Link
US (1) US3672948A (en)
BE (1) BE760041A (en)
CA (1) CA931025A (en)
CH (1) CH520525A (en)
DE (1) DE2064470C3 (en)
ES (1) ES386190A1 (en)
FR (1) FR2075030A5 (en)
GB (1) GB1328390A (en)
NL (1) NL7018090A (en)
SE (1) SE377430B (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089735A (en) * 1968-06-05 1978-05-16 Siemens Aktiengesellschaft Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors
FR2133498B1 (en) * 1971-04-15 1977-06-03 Labo Electronique Physique
JPS4834798A (en) * 1971-09-06 1973-05-22
US3790404A (en) * 1972-06-19 1974-02-05 Ibm Continuous vapor processing apparatus and method
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US3842794A (en) * 1973-06-29 1974-10-22 Ibm Apparatus for high temperature semiconductor processing
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
US4048953A (en) * 1974-06-19 1977-09-20 Pfizer Inc. Apparatus for vapor depositing pyrolytic carbon on porous sheets of carbon material
GB1507996A (en) * 1975-06-11 1978-04-19 Pilkington Brothers Ltd Coating glass
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor
GB1523991A (en) * 1976-04-13 1978-09-06 Bfg Glassgroup Coating of glass
US4084540A (en) * 1977-05-19 1978-04-18 Discwasher, Inc. Apparatus for applying lubricating and protective film to phonograph records
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
US4171235A (en) * 1977-12-27 1979-10-16 Hughes Aircraft Company Process for fabricating heterojunction structures utilizing a double chamber vacuum deposition system
US4256053A (en) * 1979-08-17 1981-03-17 Dozier Alfred R Chemical vapor reaction system
US4256052A (en) * 1979-10-02 1981-03-17 Rca Corp. Temperature gradient means in reactor tube of vapor deposition apparatus
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state
US4651673A (en) * 1982-09-02 1987-03-24 At&T Technologies, Inc. CVD apparatus
US4518455A (en) * 1982-09-02 1985-05-21 At&T Technologies, Inc. CVD Process
IN161171B (en) * 1982-09-16 1987-10-10 Energy Conversion Devices Inc
US4462333A (en) * 1982-10-27 1984-07-31 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor
US4941429A (en) * 1988-12-20 1990-07-17 Texas Instruments Incorporated Semiconductor wafer carrier guide tracks
US5378501A (en) * 1993-10-05 1995-01-03 Foster; Robert F. Method for chemical vapor deposition of titanium nitride films at low temperatures
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
DE19704533C2 (en) * 1997-02-06 2000-10-26 Siemens Ag Process for creating layers on a surface
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
DE10320597A1 (en) 2003-04-30 2004-12-02 Aixtron Ag Method and device for depositing semiconductor layers with two process gases, one of which is preconditioned
DE102005045582B3 (en) * 2005-09-23 2007-03-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Apparatus and method for continuous vapor deposition under atmospheric pressure and their use
KR20120083712A (en) * 2011-01-18 2012-07-26 삼성엘이디 주식회사 Susceptor and chemical vapor deposition apparatus comprising the same
WO2012127305A1 (en) * 2011-03-21 2012-09-27 Centrotherm Photovoltaics Ag Gas supply for a processing furnace
DE102016101003A1 (en) 2016-01-21 2017-07-27 Aixtron Se CVD apparatus with a process chamber housing which can be removed from the reactor housing as an assembly
US20230002906A1 (en) * 2021-07-01 2023-01-05 Mellanox Technologies, Ltd. Continuous-feed chemical vapor deposition system
US11963309B2 (en) 2021-05-18 2024-04-16 Mellanox Technologies, Ltd. Process for laminating conductive-lubricant coated metals for printed circuit boards

Also Published As

Publication number Publication date
DE2064470A1 (en) 1971-07-08
DE2064470C3 (en) 1975-08-14
FR2075030A5 (en) 1971-10-08
CH520525A (en) 1972-03-31
DE2064470B2 (en) 1975-01-09
ES386190A1 (en) 1973-03-16
NL7018090A (en) 1971-07-06
US3672948A (en) 1972-06-27
GB1328390A (en) 1973-08-30
SE377430B (en) 1975-07-07
BE760041A (en) 1971-05-17

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