SE370466B - - Google Patents
Info
- Publication number
- SE370466B SE370466B SE7100867A SE86771A SE370466B SE 370466 B SE370466 B SE 370466B SE 7100867 A SE7100867 A SE 7100867A SE 86771 A SE86771 A SE 86771A SE 370466 B SE370466 B SE 370466B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
- H01L27/0794—Combinations of capacitors and resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US545370A | 1970-01-26 | 1970-01-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE370466B true SE370466B (de) | 1974-10-14 |
Family
ID=21715953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7100867A SE370466B (de) | 1970-01-26 | 1971-01-26 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3619735A (de) |
| JP (1) | JPS49756B1 (de) |
| DE (1) | DE2101278C2 (de) |
| FR (1) | FR2077312B1 (de) |
| GB (1) | GB1315583A (de) |
| NL (1) | NL7100928A (de) |
| SE (1) | SE370466B (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6082870U (ja) * | 1983-11-14 | 1985-06-08 | 日新建鉄株式会社 | 公衆電話用引出し式踏み台 |
| US5059897A (en) * | 1989-12-07 | 1991-10-22 | Texas Instruments Incorporated | Method and apparatus for testing passive substrates for integrated circuit mounting |
| SE470415B (sv) * | 1992-07-06 | 1994-02-14 | Ericsson Telefon Ab L M | Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator |
| US6849909B1 (en) * | 2000-09-28 | 2005-02-01 | Intel Corporation | Method and apparatus for weak inversion mode MOS decoupling capacitor |
| US7600208B1 (en) | 2007-01-31 | 2009-10-06 | Cadence Design Systems, Inc. | Automatic placement of decoupling capacitors |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL297820A (de) * | 1962-10-05 | |||
| US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
| US3423653A (en) * | 1965-09-14 | 1969-01-21 | Westinghouse Electric Corp | Integrated complementary transistor structure with equivalent performance characteristics |
| US3430110A (en) * | 1965-12-02 | 1969-02-25 | Rca Corp | Monolithic integrated circuits with a plurality of isolation zones |
| FR1535920A (fr) * | 1966-12-13 | 1968-08-09 | Texas Instruments Inc | Procédé de fabrication de circuits intégrés |
| US3538397A (en) * | 1967-05-09 | 1970-11-03 | Motorola Inc | Distributed semiconductor power supplies and decoupling capacitor therefor |
| US3465215A (en) * | 1967-06-30 | 1969-09-02 | Texas Instruments Inc | Process for fabricating monolithic circuits having matched complementary transistors and product |
| US3560277A (en) * | 1968-01-15 | 1971-02-02 | Ibm | Process for making semiconductor bodies having power connections internal thereto |
| US3544863A (en) * | 1968-10-29 | 1970-12-01 | Motorola Inc | Monolithic integrated circuit substructure with epitaxial decoupling capacitance |
-
1970
- 1970-01-26 US US5453A patent/US3619735A/en not_active Expired - Lifetime
- 1970-12-17 JP JP45112595A patent/JPS49756B1/ja active Pending
- 1970-12-17 FR FR707047132A patent/FR2077312B1/fr not_active Expired
-
1971
- 1971-01-11 GB GB125871A patent/GB1315583A/en not_active Expired
- 1971-01-13 DE DE2101278A patent/DE2101278C2/de not_active Expired
- 1971-01-22 NL NL7100928A patent/NL7100928A/xx unknown
- 1971-01-26 SE SE7100867A patent/SE370466B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7100928A (de) | 1971-07-28 |
| DE2101278C2 (de) | 1982-05-06 |
| GB1315583A (en) | 1973-05-02 |
| FR2077312B1 (de) | 1974-02-15 |
| JPS49756B1 (de) | 1974-01-09 |
| FR2077312A1 (de) | 1971-10-22 |
| DE2101278A1 (de) | 1971-08-05 |
| US3619735A (en) | 1971-11-09 |