SE365905B - - Google Patents

Info

Publication number
SE365905B
SE365905B SE868970A SE868970A SE365905B SE 365905 B SE365905 B SE 365905B SE 868970 A SE868970 A SE 868970A SE 868970 A SE868970 A SE 868970A SE 365905 B SE365905 B SE 365905B
Authority
SE
Sweden
Application number
SE868970A
Inventor
T Brand
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE365905B publication Critical patent/SE365905B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SE868970A 1969-06-26 1970-06-23 SE365905B (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6909788A NL165005C (nl) 1969-06-26 1969-06-26 Halfgeleiderinrichting bevattende veldeffecttransistors met geisoleerde stuurelektrode en werkwijze voor het vervaardigen van de halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
SE365905B true SE365905B (fr) 1974-04-01

Family

ID=19807307

Family Applications (1)

Application Number Title Priority Date Filing Date
SE868970A SE365905B (fr) 1969-06-26 1970-06-23

Country Status (8)

Country Link
AT (1) AT336080B (fr)
BE (1) BE752480A (fr)
CH (1) CH514937A (fr)
DE (1) DE2029058C2 (fr)
FR (1) FR2047958B1 (fr)
GB (1) GB1325332A (fr)
NL (1) NL165005C (fr)
SE (1) SE365905B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528229B1 (fr) * 1971-03-19 1980-07-26
US3728161A (en) * 1971-12-28 1973-04-17 Bell Telephone Labor Inc Integrated circuits with ion implanted chan stops
JPS559834B2 (fr) * 1972-03-31 1980-03-12
JPS551189A (en) * 1979-05-07 1980-01-07 Nec Corp Semiconductor device
JPS55102274A (en) * 1980-01-25 1980-08-05 Agency Of Ind Science & Technol Insulated gate field effect transistor
GB2123605A (en) * 1982-06-22 1984-02-01 Standard Microsyst Smc MOS integrated circuit structure and method for its fabrication

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636316A (fr) * 1962-08-23 1900-01-01
US3400383A (en) * 1964-08-05 1968-09-03 Texas Instruments Inc Trainable decision system and adaptive memory element
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
GB1145092A (en) * 1965-06-09 1969-03-12 Mullard Ltd Improvements in insulated gate field effect semiconductor devices
GB1155578A (en) * 1965-10-08 1969-06-18 Sony Corp Field Effect Transistor
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
GB1131675A (en) * 1966-07-11 1968-10-23 Hitachi Ltd Semiconductor device
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
GB1203298A (en) * 1967-01-10 1970-08-26 Hewlett Packard Co Mis integrated circuit and method of fabricating the same

Also Published As

Publication number Publication date
CH514937A (de) 1971-10-31
DE2029058C2 (de) 1983-06-23
NL6909788A (fr) 1970-12-29
NL165005B (nl) 1980-09-15
BE752480A (fr) 1970-12-24
AT336080B (de) 1977-04-12
FR2047958B1 (fr) 1975-09-26
FR2047958A1 (fr) 1971-03-19
NL165005C (nl) 1981-02-16
ATA564470A (de) 1976-08-15
GB1325332A (en) 1973-08-01
DE2029058A1 (de) 1971-01-07

Similar Documents

Publication Publication Date Title
AU2270770A (fr)
AU465452B2 (fr)
AU429630B2 (fr)
AU450150B2 (fr)
AU2355770A (fr)
AU442375B2 (fr)
AU427401B2 (fr)
AU470301B1 (fr)
AU442463B2 (fr)
AU414607B2 (fr)
AU428129B2 (fr)
AU428131B2 (fr)
AT308690B (fr)
AU470661B1 (fr)
AU438128B2 (fr)
AU410358B2 (fr)
AU442285B2 (fr)
AU442322B2 (fr)
AU442357B2 (fr)
AU417208B2 (fr)
AU442380B2 (fr)
AU425297B2 (fr)
AU442535B2 (fr)
AU442538B2 (fr)
AU442554B2 (fr)