SE365344B - - Google Patents

Info

Publication number
SE365344B
SE365344B SE08027/70A SE802770A SE365344B SE 365344 B SE365344 B SE 365344B SE 08027/70 A SE08027/70 A SE 08027/70A SE 802770 A SE802770 A SE 802770A SE 365344 B SE365344 B SE 365344B
Authority
SE
Sweden
Application number
SE08027/70A
Inventor
J Garrett
Original Assignee
Westinghouse Brake & Signal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake & Signal filed Critical Westinghouse Brake & Signal
Publication of SE365344B publication Critical patent/SE365344B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
SE08027/70A 1969-06-11 1970-06-10 SE365344B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB29713/69A GB1263174A (en) 1969-06-11 1969-06-11 Semiconductor device

Publications (1)

Publication Number Publication Date
SE365344B true SE365344B (de) 1974-03-18

Family

ID=10295923

Family Applications (1)

Application Number Title Priority Date Filing Date
SE08027/70A SE365344B (de) 1969-06-11 1970-06-10

Country Status (6)

Country Link
US (1) US3725753A (de)
JP (1) JPS5026273B1 (de)
DE (1) DE2028010A1 (de)
FR (1) FR2045980B1 (de)
GB (1) GB1263174A (de)
SE (1) SE365344B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978513A (en) * 1971-05-21 1976-08-31 Hitachi, Ltd. Semiconductor controlled rectifying device
GB1410726A (en) * 1972-01-24 1975-10-22 Licentia Gmbh Thyristor with increased switching on an switching through speed
JPS541437B2 (de) * 1973-04-18 1979-01-24
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
FR2254880B1 (de) * 1973-12-12 1978-11-10 Alsthom Cgee
CH578254A5 (de) * 1974-12-03 1976-07-30 Bbc Brown Boveri & Cie
DE2520134C3 (de) * 1975-05-06 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor mit einem rechteckigen Halbleiterelement
US4054893A (en) * 1975-12-29 1977-10-18 Hutson Jearld L Semiconductor switching devices utilizing nonohmic current paths across P-N junctions
US4097887A (en) * 1976-09-13 1978-06-27 General Electric Company Low resistance, durable gate contact pad for thyristors
DE2801722A1 (de) * 1978-01-16 1979-07-19 Siemens Ag Schaltungsanordnung zum herabsetzen der freiwerdezeit eines thyristors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268728A (de) * 1960-06-10
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
DE1539694B2 (de) * 1966-07-02 1971-04-29 Brown, Boven & Cie AG, 6800 Mann heim Thyristor mit vier zonen abwechselnden leitfaehigkeitstyps

Also Published As

Publication number Publication date
GB1263174A (en) 1972-02-09
FR2045980A1 (de) 1971-03-05
DE2028010A1 (de) 1970-12-17
JPS5026273B1 (de) 1975-08-29
FR2045980B1 (de) 1975-01-10
US3725753A (en) 1973-04-03

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