JPS5026273B1 - - Google Patents
Info
- Publication number
- JPS5026273B1 JPS5026273B1 JP45049949A JP4994970A JPS5026273B1 JP S5026273 B1 JPS5026273 B1 JP S5026273B1 JP 45049949 A JP45049949 A JP 45049949A JP 4994970 A JP4994970 A JP 4994970A JP S5026273 B1 JPS5026273 B1 JP S5026273B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB29713/69A GB1263174A (en) | 1969-06-11 | 1969-06-11 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5026273B1 true JPS5026273B1 (ja) | 1975-08-29 |
Family
ID=10295923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP45049949A Pending JPS5026273B1 (ja) | 1969-06-11 | 1970-06-11 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3725753A (ja) |
JP (1) | JPS5026273B1 (ja) |
DE (1) | DE2028010A1 (ja) |
FR (1) | FR2045980B1 (ja) |
GB (1) | GB1263174A (ja) |
SE (1) | SE365344B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3978513A (en) * | 1971-05-21 | 1976-08-31 | Hitachi, Ltd. | Semiconductor controlled rectifying device |
US3906545A (en) * | 1972-01-24 | 1975-09-16 | Licentia Gmbh | Thyristor structure |
JPS541437B2 (ja) * | 1973-04-18 | 1979-01-24 | ||
US4083063A (en) * | 1973-10-09 | 1978-04-04 | General Electric Company | Gate turnoff thyristor with a pilot scr |
FR2254880B1 (ja) * | 1973-12-12 | 1978-11-10 | Alsthom Cgee | |
CH578254A5 (ja) * | 1974-12-03 | 1976-07-30 | Bbc Brown Boveri & Cie | |
DE2520134C3 (de) * | 1975-05-06 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor mit einem rechteckigen Halbleiterelement |
US4054893A (en) * | 1975-12-29 | 1977-10-18 | Hutson Jearld L | Semiconductor switching devices utilizing nonohmic current paths across P-N junctions |
US4097887A (en) * | 1976-09-13 | 1978-06-27 | General Electric Company | Low resistance, durable gate contact pad for thyristors |
DE2801722A1 (de) * | 1978-01-16 | 1979-07-19 | Siemens Ag | Schaltungsanordnung zum herabsetzen der freiwerdezeit eines thyristors |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL268728A (ja) * | 1960-06-10 | |||
GB1174899A (en) * | 1966-04-15 | 1969-12-17 | Westinghouse Brake & Signal | Improvements relating to Controllable Rectifier Devices |
DE1539694B2 (de) * | 1966-07-02 | 1971-04-29 | Brown, Boven & Cie AG, 6800 Mann heim | Thyristor mit vier zonen abwechselnden leitfaehigkeitstyps |
-
1969
- 1969-06-11 GB GB29713/69A patent/GB1263174A/en not_active Expired
-
1970
- 1970-06-08 DE DE19702028010 patent/DE2028010A1/de active Pending
- 1970-06-10 SE SE08027/70A patent/SE365344B/xx unknown
- 1970-06-10 FR FR7021240A patent/FR2045980B1/fr not_active Expired
- 1970-06-11 JP JP45049949A patent/JPS5026273B1/ja active Pending
-
1972
- 1972-04-14 US US00244310A patent/US3725753A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3725753A (en) | 1973-04-03 |
GB1263174A (en) | 1972-02-09 |
DE2028010A1 (de) | 1970-12-17 |
FR2045980B1 (ja) | 1975-01-10 |
FR2045980A1 (ja) | 1971-03-05 |
SE365344B (ja) | 1974-03-18 |