SE359212B - - Google Patents
Info
- Publication number
- SE359212B SE359212B SE06698/70A SE669870A SE359212B SE 359212 B SE359212 B SE 359212B SE 06698/70 A SE06698/70 A SE 06698/70A SE 669870 A SE669870 A SE 669870A SE 359212 B SE359212 B SE 359212B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82523569A | 1969-05-16 | 1969-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE359212B true SE359212B (xx) | 1973-08-20 |
Family
ID=25243462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE06698/70A SE359212B (xx) | 1969-05-16 | 1970-05-15 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3611063A (xx) |
| JP (1) | JPS5026271B1 (xx) |
| DE (1) | DE2023691B2 (xx) |
| FR (1) | FR2047855A5 (xx) |
| GB (1) | GB1299759A (xx) |
| NL (1) | NL7007094A (xx) |
| SE (1) | SE359212B (xx) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3775174A (en) * | 1968-11-04 | 1973-11-27 | Energy Conversion Devices Inc | Film deposited circuits and devices therefor |
| US3868651A (en) * | 1970-08-13 | 1975-02-25 | Energy Conversion Devices Inc | Method and apparatus for storing and reading data in a memory having catalytic material to initiate amorphous to crystalline change in memory structure |
| US4050082A (en) * | 1973-11-13 | 1977-09-20 | Innotech Corporation | Glass switching device using an ion impermeable glass active layer |
| US3877049A (en) * | 1973-11-28 | 1975-04-08 | William D Buckley | Electrodes for amorphous semiconductor switch devices and method of making the same |
| FR2478879A1 (fr) * | 1980-03-24 | 1981-09-25 | Commissariat Energie Atomique | Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes |
| US4433342A (en) * | 1981-04-06 | 1984-02-21 | Harris Corporation | Amorphous switching device with residual crystallization retardation |
| US4906987A (en) * | 1985-10-29 | 1990-03-06 | Ohio Associated Enterprises, Inc. | Printed circuit board system and method |
| US4782340A (en) * | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
| US5989943A (en) * | 1989-09-07 | 1999-11-23 | Quicklogic Corporation | Method for fabrication of programmable interconnect structure |
| US5502315A (en) * | 1989-09-07 | 1996-03-26 | Quicklogic Corporation | Electrically programmable interconnect structure having a PECVD amorphous silicon element |
| US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
| US5485031A (en) * | 1993-11-22 | 1996-01-16 | Actel Corporation | Antifuse structure suitable for VLSI application |
| EP0749638B1 (en) * | 1994-12-22 | 1999-06-16 | Koninklijke Philips Electronics N.V. | Semiconductor memory devices and methods of producing such |
| JP3169866B2 (ja) * | 1997-11-04 | 2001-05-28 | 日本電気株式会社 | 薄膜キャパシタ及びその製造方法 |
| JP4792714B2 (ja) * | 2003-11-28 | 2011-10-12 | ソニー株式会社 | 記憶素子及び記憶装置 |
| US9935357B2 (en) * | 2016-08-02 | 2018-04-03 | Dell Products L.P. | Antenna solution for narrow bezel system |
| US10374009B1 (en) | 2018-07-17 | 2019-08-06 | Macronix International Co., Ltd. | Te-free AsSeGe chalcogenides for selector devices and memory devices using same |
| US11289540B2 (en) | 2019-10-15 | 2022-03-29 | Macronix International Co., Ltd. | Semiconductor device and memory cell |
| US11158787B2 (en) | 2019-12-17 | 2021-10-26 | Macronix International Co., Ltd. | C—As—Se—Ge ovonic materials for selector devices and memory devices using same |
| US11362276B2 (en) | 2020-03-27 | 2022-06-14 | Macronix International Co., Ltd. | High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3161946A (en) * | 1964-12-22 | permalloy | ||
| US2917442A (en) * | 1955-12-30 | 1959-12-15 | Electronique & Automatisme Sa | Method of making electroluminescent layers |
| US3021271A (en) * | 1959-04-27 | 1962-02-13 | Gen Mills Inc | Growth of solid layers on substrates which are kept under ion bombardment before and during deposition |
| NL256173A (xx) * | 1959-11-16 | |||
| US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
| US3327137A (en) * | 1964-04-10 | 1967-06-20 | Energy Conversion Devices Inc | Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances |
-
1969
- 1969-05-16 US US825235A patent/US3611063A/en not_active Expired - Lifetime
-
1970
- 1970-05-08 GB GB22370/70A patent/GB1299759A/en not_active Expired
- 1970-05-14 DE DE19702023691 patent/DE2023691B2/de active Pending
- 1970-05-15 SE SE06698/70A patent/SE359212B/xx unknown
- 1970-05-15 FR FR7017913A patent/FR2047855A5/fr not_active Expired
- 1970-05-15 NL NL7007094A patent/NL7007094A/xx unknown
- 1970-05-16 JP JP45041554A patent/JPS5026271B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5026271B1 (xx) | 1975-08-29 |
| DE2023691A1 (de) | 1970-11-19 |
| FR2047855A5 (xx) | 1971-03-12 |
| US3611063A (en) | 1971-10-05 |
| NL7007094A (xx) | 1970-11-18 |
| GB1299759A (en) | 1972-12-13 |
| DE2023691B2 (de) | 1976-01-22 |