SE355109B - - Google Patents
Info
- Publication number
- SE355109B SE355109B SE07327/69A SE732769A SE355109B SE 355109 B SE355109 B SE 355109B SE 07327/69 A SE07327/69 A SE 07327/69A SE 732769 A SE732769 A SE 732769A SE 355109 B SE355109 B SE 355109B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Filling Or Emptying Of Bunkers, Hoppers, And Tanks (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3538568 | 1968-05-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE355109B true SE355109B (en) | 1973-04-02 |
Family
ID=12440421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE07327/69A SE355109B (en) | 1968-05-25 | 1969-05-23 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3648128A (en) |
| AT (1) | AT310812B (en) |
| BE (1) | BE733509A (en) |
| CH (2) | CH533907A (en) |
| DE (1) | DE1926884A1 (en) |
| FR (1) | FR2009343B1 (en) |
| GB (1) | GB1263617A (en) |
| NL (1) | NL142287B (en) |
| NO (1) | NO125996B (en) |
| SE (1) | SE355109B (en) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3621346A (en) * | 1970-01-28 | 1971-11-16 | Ibm | Process for forming semiconductor devices with polycrystalline diffusion pathways and devices formed thereby |
| NL7001607A (en) * | 1970-02-05 | 1971-08-09 | ||
| US3703420A (en) * | 1970-03-03 | 1972-11-21 | Ibm | Lateral transistor structure and process for forming the same |
| US3653120A (en) * | 1970-07-27 | 1972-04-04 | Gen Electric | Method of making low resistance polycrystalline silicon contacts to buried collector regions using refractory metal silicides |
| US4054899A (en) * | 1970-09-03 | 1977-10-18 | Texas Instruments Incorporated | Process for fabricating monolithic circuits having matched complementary transistors and product |
| NL166156C (en) * | 1971-05-22 | 1981-06-15 | Philips Nv | SEMICONDUCTOR DEVICE CONTAINING AT LEAST ONE on a semiconductor substrate BODY MADE SEMICONDUCTOR LAYER WITH AT LEAST ONE ISOLATION ZONE WHICH ONE IN THE SEMICONDUCTOR LAYER COUNTERSUNk INSULATION FROM SHAPED INSULATING MATERIAL BY LOCAL THERMAL OXIDATION OF HALF OF THE SEMICONDUCTOR LAYER GUIDE MATERIALS CONTAIN AND METHOD FOR MANUFACTURING SAME. |
| DE2212168C2 (en) * | 1972-03-14 | 1982-10-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithically integrated semiconductor device |
| US3847687A (en) * | 1972-11-15 | 1974-11-12 | Motorola Inc | Methods of forming self aligned transistor structure having polycrystalline contacts |
| JPS604591B2 (en) * | 1973-11-02 | 1985-02-05 | 株式会社日立製作所 | Semiconductor integrated circuit device |
| US3956033A (en) * | 1974-01-03 | 1976-05-11 | Motorola, Inc. | Method of fabricating an integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector |
| JPS51132779A (en) * | 1975-05-14 | 1976-11-18 | Hitachi Ltd | Production method of vertical-junction type field-effect transistor |
| JPS53108776A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Semiconductor device |
| JPS5951743B2 (en) * | 1978-11-08 | 1984-12-15 | 株式会社日立製作所 | semiconductor integrated device |
| US4274891A (en) * | 1979-06-29 | 1981-06-23 | International Business Machines Corporation | Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition |
| US4485552A (en) * | 1980-01-18 | 1984-12-04 | International Business Machines Corporation | Complementary transistor structure and method for manufacture |
| JPS5730359A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Semiconductor device |
| US4706107A (en) * | 1981-06-04 | 1987-11-10 | Nippon Electric Co., Ltd. | IC memory cells with reduced alpha particle influence |
| US4573257A (en) * | 1984-09-14 | 1986-03-04 | Motorola, Inc. | Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key |
| US4583282A (en) * | 1984-09-14 | 1986-04-22 | Motorola, Inc. | Process for self-aligned buried layer, field guard, and isolation |
| US4574469A (en) * | 1984-09-14 | 1986-03-11 | Motorola, Inc. | Process for self-aligned buried layer, channel-stop, and isolation |
| IT1218471B (en) * | 1985-05-09 | 1990-04-19 | Ates Componenti Elettron | BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE |
| US6005282A (en) * | 1986-09-26 | 1999-12-21 | Analog Devices, Inc. | Integrated circuit with complementary isolated bipolar transistors |
| US4737468A (en) * | 1987-04-13 | 1988-04-12 | Motorola Inc. | Process for developing implanted buried layer and/or key locators |
| US4830973A (en) * | 1987-10-06 | 1989-05-16 | Motorola, Inc. | Merged complementary bipolar and MOS means and method |
| US5117274A (en) * | 1987-10-06 | 1992-05-26 | Motorola, Inc. | Merged complementary bipolar and MOS means and method |
| US5212109A (en) * | 1989-05-24 | 1993-05-18 | Nissan Motor Co., Ltd. | Method for forming PN junction isolation regions by forming buried regions of doped polycrystalline or amorphous semiconductor |
| US5406113A (en) * | 1991-01-09 | 1995-04-11 | Fujitsu Limited | Bipolar transistor having a buried collector layer |
| JPH05218049A (en) * | 1992-01-31 | 1993-08-27 | Nec Corp | Substrate for forming semiconductor chip |
| US7411271B1 (en) * | 2007-01-19 | 2008-08-12 | Episil Technologies Inc. | Complementary metal-oxide-semiconductor field effect transistor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
| US3341755A (en) * | 1964-03-20 | 1967-09-12 | Westinghouse Electric Corp | Switching transistor structure and method of making the same |
| US3312882A (en) * | 1964-06-25 | 1967-04-04 | Westinghouse Electric Corp | Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response |
| FR1459892A (en) * | 1964-08-20 | 1966-06-17 | Texas Instruments Inc | Semiconductor devices |
| DE1439736A1 (en) * | 1964-10-30 | 1969-03-27 | Telefunken Patent | Process for the production of low collector or diode path resistances in a solid-state circuit |
| US3327182A (en) * | 1965-06-14 | 1967-06-20 | Westinghouse Electric Corp | Semiconductor integrated circuit structure and method of making the same |
| US3475661A (en) * | 1966-02-09 | 1969-10-28 | Sony Corp | Semiconductor device including polycrystalline areas among monocrystalline areas |
| US3414783A (en) * | 1966-03-14 | 1968-12-03 | Westinghouse Electric Corp | Electronic apparatus for high speed transistor switching |
| US3474308A (en) * | 1966-12-13 | 1969-10-21 | Texas Instruments Inc | Monolithic circuits having matched complementary transistors,sub-epitaxial and surface resistors,and n and p channel field effect transistors |
-
1969
- 1969-05-21 US US826437A patent/US3648128A/en not_active Expired - Lifetime
- 1969-05-22 CH CH675172A patent/CH533907A/en not_active IP Right Cessation
- 1969-05-22 CH CH777869A patent/CH529445A/en not_active IP Right Cessation
- 1969-05-23 BE BE733509D patent/BE733509A/xx not_active IP Right Cessation
- 1969-05-23 FR FR6917034A patent/FR2009343B1/fr not_active Expired
- 1969-05-23 GB GB26433/69A patent/GB1263617A/en not_active Expired
- 1969-05-23 NO NO2118/69A patent/NO125996B/no unknown
- 1969-05-23 NL NL696907927A patent/NL142287B/en not_active IP Right Cessation
- 1969-05-23 SE SE07327/69A patent/SE355109B/xx unknown
- 1969-05-27 AT AT499269A patent/AT310812B/en not_active IP Right Cessation
- 1969-05-27 DE DE19691926884 patent/DE1926884A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NO125996B (en) | 1972-12-04 |
| FR2009343B1 (en) | 1974-10-31 |
| FR2009343A1 (en) | 1970-01-30 |
| DE1926884A1 (en) | 1969-12-11 |
| NL142287B (en) | 1974-05-15 |
| BE733509A (en) | 1969-11-03 |
| CH533907A (en) | 1973-02-28 |
| AT310812B (en) | 1973-10-25 |
| CH529445A (en) | 1972-10-15 |
| GB1263617A (en) | 1972-02-16 |
| US3648128A (en) | 1972-03-07 |
| NL6907927A (en) | 1969-11-27 |