SE354381B - - Google Patents

Info

Publication number
SE354381B
SE354381B SE09954/69A SE995469A SE354381B SE 354381 B SE354381 B SE 354381B SE 09954/69 A SE09954/69 A SE 09954/69A SE 995469 A SE995469 A SE 995469A SE 354381 B SE354381 B SE 354381B
Authority
SE
Sweden
Prior art keywords
groove
region
regions
junction
edge
Prior art date
Application number
SE09954/69A
Other languages
English (en)
Inventor
D Clerc
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of SE354381B publication Critical patent/SE354381B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Thyristors (AREA)
SE09954/69A 1968-07-15 1969-07-14 SE354381B (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1055368A CH485324A (de) 1968-07-15 1968-07-15 Halbleiterelement

Publications (1)

Publication Number Publication Date
SE354381B true SE354381B (cg-RX-API-DMAC7.html) 1973-03-05

Family

ID=4364431

Family Applications (1)

Application Number Title Priority Date Filing Date
SE09954/69A SE354381B (cg-RX-API-DMAC7.html) 1968-07-15 1969-07-14

Country Status (7)

Country Link
AT (1) AT278907B (cg-RX-API-DMAC7.html)
CH (1) CH485324A (cg-RX-API-DMAC7.html)
DE (2) DE6922591U (cg-RX-API-DMAC7.html)
FR (1) FR2012977A7 (cg-RX-API-DMAC7.html)
GB (1) GB1220315A (cg-RX-API-DMAC7.html)
NL (1) NL6812691A (cg-RX-API-DMAC7.html)
SE (1) SE354381B (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置
DE10326578B4 (de) 2003-06-12 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer SOI-Scheibe

Also Published As

Publication number Publication date
DE1928787A1 (de) 1970-11-12
FR2012977A7 (cg-RX-API-DMAC7.html) 1970-03-27
CH485324A (de) 1970-01-31
AT278907B (de) 1970-02-25
GB1220315A (en) 1971-01-27
DE6922591U (de) 1971-03-18
NL6812691A (cg-RX-API-DMAC7.html) 1970-01-19

Similar Documents

Publication Publication Date Title
NL134915C (cg-RX-API-DMAC7.html)
JPS5225713B1 (cg-RX-API-DMAC7.html)
GB1301192A (en) Semiconductor controlled rectifier device
FR2404923A1 (fr) Transistor bipolaire
ES393035A1 (es) Un dispositivo semiconductor.
GB1134019A (en) Improvements in semi-conductor devices
GB983266A (en) Semiconductor switching devices
FR2012977A7 (cg-RX-API-DMAC7.html)
GB1245765A (en) Surface diffused semiconductor devices
GB1098760A (en) Method of making semiconductor device
GB1021147A (en) Divided base four-layer semiconductor device
GB1335037A (en) Field effect transistor
GB1102197A (en) Semi-conductor elements
GB1073707A (en) A pnpn semi-conductor component
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1140643A (en) Improvements in or relating to transistors
JPS4819113B1 (cg-RX-API-DMAC7.html)
GB1428742A (en) Semiconductor devices
GB1275498A (en) Semiconductor device
GB1031449A (en) Improvements in or relating to semiconductor elements
GB1206202A (en) Junction transistors
FR1454806A (fr) Transistor
GB1238403A (cg-RX-API-DMAC7.html)
GB1148268A (en) Alloyed ohmic contacts in semiconductor material
ES332522A1 (es) Dispositivo transistor de alta tension.