SE349427B - - Google Patents
Info
- Publication number
- SE349427B SE349427B SE01212/68A SE121268A SE349427B SE 349427 B SE349427 B SE 349427B SE 01212/68 A SE01212/68 A SE 01212/68A SE 121268 A SE121268 A SE 121268A SE 349427 B SE349427 B SE 349427B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61361267A | 1967-02-02 | 1967-02-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE349427B true SE349427B (fr) | 1972-09-25 |
Family
ID=24457995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE01212/68A SE349427B (fr) | 1967-02-02 | 1968-01-30 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3440501A (fr) |
DE (1) | DE1639244C3 (fr) |
FR (1) | FR1553356A (fr) |
GB (1) | GB1182852A (fr) |
SE (1) | SE349427B (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH460957A (de) * | 1967-08-03 | 1968-08-15 | Bbc Brown Boveri & Cie | Schaltungsanordnung mit mehreren Halbleiterelementen |
US3700982A (en) * | 1968-08-12 | 1972-10-24 | Int Rectifier Corp | Controlled rectifier having gate electrode which extends across the gate and cathode layers |
US3622845A (en) * | 1969-05-01 | 1971-11-23 | Gen Electric | Scr with amplified emitter gate |
US3836994A (en) * | 1969-05-01 | 1974-09-17 | Gen Electric | Thyristor overvoltage protective element |
DE2038663C3 (de) * | 1970-08-04 | 1984-05-03 | Gewerkschaft Eisenhütte Westfalia, 4670 Lünen | Hydraulische Steuervorrichtung für rückbare Ausbaueinheiten in Form von Rahmen, Böcken u.dgl. |
US4028721A (en) * | 1973-08-01 | 1977-06-07 | Hitachi, Ltd. | Semiconductor controlled rectifier device |
US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
US4012761A (en) * | 1976-04-19 | 1977-03-15 | General Electric Company | Self-protected semiconductor device |
JPS5939909B2 (ja) * | 1978-03-31 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB942901A (en) * | 1961-08-29 | 1963-11-27 | Ass Elect Ind | Improvements in controlled semi-conductor rectifiers |
DE1202906B (de) * | 1962-05-10 | 1965-10-14 | Licentia Gmbh | Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen |
NL296392A (fr) * | 1963-08-07 | |||
US3317746A (en) * | 1963-12-10 | 1967-05-02 | Electronic Controls Corp | Semiconductor device and circuit |
US3275909A (en) * | 1963-12-19 | 1966-09-27 | Gen Electric | Semiconductor switch |
GB1095469A (fr) * | 1964-03-21 | |||
FR1452718A (fr) * | 1964-07-27 | 1966-04-15 | Gen Electric | Perfectionnements aux redresseurs commandés |
-
1967
- 1967-02-02 US US613612A patent/US3440501A/en not_active Expired - Lifetime
-
1968
- 1968-01-02 GB GB269/68A patent/GB1182852A/en not_active Expired
- 1968-01-30 SE SE01212/68A patent/SE349427B/xx unknown
- 1968-01-31 DE DE1639244A patent/DE1639244C3/de not_active Expired
- 1968-02-01 FR FR1553356D patent/FR1553356A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1639244B2 (de) | 1973-05-24 |
DE1639244A1 (de) | 1972-07-27 |
DE1639244C3 (de) | 1973-12-13 |
GB1182852A (en) | 1970-03-04 |
US3440501A (en) | 1969-04-22 |
FR1553356A (fr) | 1969-01-10 |