SE349427B - - Google Patents

Info

Publication number
SE349427B
SE349427B SE01212/68A SE121268A SE349427B SE 349427 B SE349427 B SE 349427B SE 01212/68 A SE01212/68 A SE 01212/68A SE 121268 A SE121268 A SE 121268A SE 349427 B SE349427 B SE 349427B
Authority
SE
Sweden
Application number
SE01212/68A
Inventor
D Piccone
I Somos
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE349427B publication Critical patent/SE349427B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
SE01212/68A 1967-02-02 1968-01-30 SE349427B (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61361267A 1967-02-02 1967-02-02

Publications (1)

Publication Number Publication Date
SE349427B true SE349427B (fr) 1972-09-25

Family

ID=24457995

Family Applications (1)

Application Number Title Priority Date Filing Date
SE01212/68A SE349427B (fr) 1967-02-02 1968-01-30

Country Status (5)

Country Link
US (1) US3440501A (fr)
DE (1) DE1639244C3 (fr)
FR (1) FR1553356A (fr)
GB (1) GB1182852A (fr)
SE (1) SE349427B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH460957A (de) * 1967-08-03 1968-08-15 Bbc Brown Boveri & Cie Schaltungsanordnung mit mehreren Halbleiterelementen
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers
US3622845A (en) * 1969-05-01 1971-11-23 Gen Electric Scr with amplified emitter gate
US3836994A (en) * 1969-05-01 1974-09-17 Gen Electric Thyristor overvoltage protective element
DE2038663C3 (de) * 1970-08-04 1984-05-03 Gewerkschaft Eisenhütte Westfalia, 4670 Lünen Hydraulische Steuervorrichtung für rückbare Ausbaueinheiten in Form von Rahmen, Böcken u.dgl.
US4028721A (en) * 1973-08-01 1977-06-07 Hitachi, Ltd. Semiconductor controlled rectifier device
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device
JPS5939909B2 (ja) * 1978-03-31 1984-09-27 株式会社東芝 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB942901A (en) * 1961-08-29 1963-11-27 Ass Elect Ind Improvements in controlled semi-conductor rectifiers
DE1202906B (de) * 1962-05-10 1965-10-14 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
NL296392A (fr) * 1963-08-07
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
US3275909A (en) * 1963-12-19 1966-09-27 Gen Electric Semiconductor switch
GB1095469A (fr) * 1964-03-21
FR1452718A (fr) * 1964-07-27 1966-04-15 Gen Electric Perfectionnements aux redresseurs commandés

Also Published As

Publication number Publication date
DE1639244B2 (de) 1973-05-24
DE1639244A1 (de) 1972-07-27
DE1639244C3 (de) 1973-12-13
GB1182852A (en) 1970-03-04
US3440501A (en) 1969-04-22
FR1553356A (fr) 1969-01-10

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