SE338620B - - Google Patents

Info

Publication number
SE338620B
SE338620B SE08936/68A SE893668A SE338620B SE 338620 B SE338620 B SE 338620B SE 08936/68 A SE08936/68 A SE 08936/68A SE 893668 A SE893668 A SE 893668A SE 338620 B SE338620 B SE 338620B
Authority
SE
Sweden
Application number
SE08936/68A
Inventor
H Carlson
C Fuller
G Brown
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of SE338620B publication Critical patent/SE338620B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
SE08936/68A 1967-09-29 1968-06-28 SE338620B (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67171067A 1967-09-29 1967-09-29

Publications (1)

Publication Number Publication Date
SE338620B true SE338620B (en:Method) 1971-09-13

Family

ID=24695582

Family Applications (1)

Application Number Title Priority Date Filing Date
SE08936/68A SE338620B (en:Method) 1967-09-29 1968-06-28

Country Status (6)

Country Link
US (1) US3632438A (en:Method)
DE (1) DE1764543A1 (en:Method)
FR (1) FR1571223A (en:Method)
GB (1) GB1227779A (en:Method)
NL (1) NL6809091A (en:Method)
SE (1) SE338620B (en:Method)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783119A (en) * 1969-06-18 1974-01-01 Ibm Method for passivating semiconductor material and field effect transistor formed thereby
US3829888A (en) * 1971-01-08 1974-08-13 Hitachi Ltd Semiconductor device and the method of making the same
FR2228301B1 (en:Method) * 1973-05-03 1977-10-14 Ibm
US3945856A (en) * 1974-07-15 1976-03-23 Ibm Corporation Method of ion implantation through an electrically insulative material
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPH0614524B2 (ja) * 1984-03-01 1994-02-23 株式会社東芝 半導体装置
US4525239A (en) * 1984-04-23 1985-06-25 Hewlett-Packard Company Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits
US5069740A (en) * 1984-09-04 1991-12-03 Texas Instruments Incorporated Production of semiconductor grade silicon spheres from metallurgical grade silicon particles
US4861126A (en) * 1987-11-02 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Low temperature intrinsic gettering technique
US5418173A (en) * 1992-11-24 1995-05-23 At&T Corp. Method of reducing ionic contamination in integrated circuit fabrication
US5789308A (en) * 1995-06-06 1998-08-04 Advanced Micro Devices, Inc. Manufacturing method for wafer slice starting material to optimize extrinsic gettering during semiconductor fabrication
AU736751B2 (en) * 1996-12-26 2001-08-02 Canon Kabushiki Kaisha Electron source substrate and electron source and image-forming apparatus using such substrate as well as method of manufacturing the same
TW390963B (en) * 1997-09-26 2000-05-21 Shinetsu Handotai Kk Method and apparatus for detecting heavy metals in silicon wafer bulk withhigh sensitivity
US7115991B1 (en) * 2001-10-22 2006-10-03 Lsi Logic Corporation Method for creating barriers for copper diffusion
US6998343B1 (en) 2003-11-24 2006-02-14 Lsi Logic Corporation Method for creating barrier layers for copper diffusion
US7910393B2 (en) * 2009-06-17 2011-03-22 Innovalight, Inc. Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447958A (en) * 1964-03-06 1969-06-03 Hitachi Ltd Surface treatment for semiconductor devices
US3503813A (en) * 1965-12-15 1970-03-31 Hitachi Ltd Method of making a semiconductor device

Also Published As

Publication number Publication date
GB1227779A (en:Method) 1971-04-07
NL6809091A (en:Method) 1969-04-01
FR1571223A (en:Method) 1969-06-13
DE1764543A1 (de) 1971-08-05
US3632438A (en) 1972-01-04

Similar Documents

Publication Publication Date Title
FR1571223A (en:Method)
AU3151267A (en:Method)
BE700656A (en:Method)
BE701536A (en:Method)
BE696478A (en:Method)
BE705921A (en:Method)
BE705763A (en:Method)
BE693747A (en:Method)
BE706940A (en:Method)
BE705250A (en:Method)
BE713010A (en:Method)
BE708330A (en:Method)
BE707791A (en:Method)
BE708886A (en:Method)
BE704275A (en:Method)
BE708118A (en:Method)
BE704215A (en:Method)
BE701140A (en:Method)
BE692922A (en:Method)
BE709733A (en:Method)
BE709191A (en:Method)
BE693430A (en:Method)
BE704230A (en:Method)
BE694784A (en:Method)
BE708402A (en:Method)