SE335893B - - Google Patents

Info

Publication number
SE335893B
SE335893B SE02456/66A SE245666A SE335893B SE 335893 B SE335893 B SE 335893B SE 02456/66 A SE02456/66 A SE 02456/66A SE 245666 A SE245666 A SE 245666A SE 335893 B SE335893 B SE 335893B
Authority
SE
Sweden
Application number
SE02456/66A
Inventor
H Williams
B Shah
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SE335893B publication Critical patent/SE335893B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Radiation-Therapy Devices (AREA)
SE02456/66A 1965-02-26 1966-02-25 SE335893B (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US435476A US3402366A (en) 1965-02-26 1965-02-26 Beam scanning in injection lasers

Publications (1)

Publication Number Publication Date
SE335893B true SE335893B (en, 2012) 1971-06-14

Family

ID=23728572

Family Applications (1)

Application Number Title Priority Date Filing Date
SE02456/66A SE335893B (en, 2012) 1965-02-26 1966-02-25

Country Status (7)

Country Link
US (1) US3402366A (en, 2012)
CH (1) CH455077A (en, 2012)
DE (1) DE1282211B (en, 2012)
FR (1) FR1462818A (en, 2012)
GB (1) GB1097023A (en, 2012)
NL (1) NL143753B (en, 2012)
SE (1) SE335893B (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508111A (en) * 1966-09-21 1970-04-21 Ibm Light emitting semiconductor device with light emission from selected portion(s) of p-n junction
US3534290A (en) * 1967-02-01 1970-10-13 Gen Electric Semiconductor laser beacon for rotating an output beam
US3517337A (en) * 1967-10-26 1970-06-23 Ibm Modulation of scanning beams in injection lasers
US3543084A (en) * 1968-01-22 1970-11-24 Ppg Industries Inc Plasma arc gas heater
DE1789061A1 (de) * 1968-09-30 1971-12-23 Siemens Ag Laserdiode
US3605037A (en) * 1969-05-02 1971-09-14 Bell Telephone Labor Inc Curved junction laser devices
US3701044A (en) * 1970-06-29 1972-10-24 Bell Telephone Labor Inc Optical coupling of adjacent stripe contact geometry semiconductor lasers
NL7608561A (nl) * 1976-08-02 1978-02-06 Philips Nv Optische uitleeseenheid voor het aftasten van een registratiedrager voorzien van een stra- lingsreflekterende informatiestruktuur.
NL7801181A (nl) * 1978-02-02 1979-08-06 Philips Nv Injectielaser.
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
HU191000B (en) * 1978-12-28 1986-12-28 Mta Koezponti Fizikai Kutato Intezete,Hu Method for making plane or spherical laser and equipment to this laser
JPS63199480A (ja) * 1987-02-16 1988-08-17 Sharp Corp 半導体レ−ザ走査装置
DE3719868A1 (de) * 1987-06-13 1988-12-22 Messerschmitt Boelkow Blohm Laserdiode
US4878222A (en) * 1988-08-05 1989-10-31 Eastman Kodak Company Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1389534A (fr) * 1962-12-31 1965-02-19 Ibm Dispositifs logiques
US3344365A (en) * 1963-06-03 1967-09-26 Rca Corp Laser system employing means with no moving parts for producing an angularly rotatable beam of coherent light
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser

Also Published As

Publication number Publication date
NL143753B (nl) 1974-10-15
CH455077A (de) 1968-04-30
US3402366A (en) 1968-09-17
NL6601666A (en, 2012) 1966-08-29
GB1097023A (en) 1967-12-29
DE1282211B (de) 1968-11-07
FR1462818A (fr) 1966-12-16

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