Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Halvledarforskning AbfiledCriticalInst Halvledarforskning Ab
Priority to SE07683/69*ApriorityCriticalpatent/SE331864B/xx
Priority to GB2584170Aprioritypatent/GB1318087A/en
Priority to DE19702026411prioritypatent/DE2026411A1/de
Priority to NL7007783Aprioritypatent/NL7007783A/xx
Priority to FR7019897Aprioritypatent/FR2043851B1/fr
Publication of SE331864BpublicationCriticalpatent/SE331864B/xx
Polarization of the firmament and the transparency of the atmosphere(Atmospheric transparency and correlation to polarization for yellow-green spectral region)
Distribution of impurities in the p-n junctions of highly-alloyed germanium(Tunnel diode capacitance relation to displacement interpreted in terms of impurity drift in nonuniform field of p-n junction in highly doped germanium diodes)
On the distribution of impurities in heavily doped germanium p-n junctions(Tunnel diode capacitance relation to displacement interpreted in terms of impurity drift in nonuniform field of p-n junction in highly doped germanium diodes)
Study of the dependence of minority carrier lifetime on the concentration of majority carriers in heavily doped germanium by means of p-n junctions(Minority carrier lifetime dependence on majority carrier concentrations based on diffusion capacitance measurements in germanium p-n junction)
Avalanche effects in silicon p-n junctions. i- localized photomultiplication studies on microplasmas(Photocurrent multiplication in a microplasma measured as a function of reverse voltage in silicon p-n junction, noting avalanche effects)
Design of a balloon-borne tracking system which focuses continuously onto the sun the various packaged instruments used to study direct solar radiation in a free atmosphere
The reactive properties of reverse-biased silicon p-n junction(Bias voltage dependence of capacitance in n-type silicon p-n junctions with voltage breakdown)
Photovoltaic and space charge capacitance measurements to study barrier height at metal- semiconductor interface of metals evaporated on cadmium sulfide and gallium arsenide samples