SE331314B - - Google Patents

Info

Publication number
SE331314B
SE331314B SE10042/65A SE1004265A SE331314B SE 331314 B SE331314 B SE 331314B SE 10042/65 A SE10042/65 A SE 10042/65A SE 1004265 A SE1004265 A SE 1004265A SE 331314 B SE331314 B SE 331314B
Authority
SE
Sweden
Application number
SE10042/65A
Inventor
J Olmstead
J Scott
P Kuznetzoff
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE331314B publication Critical patent/SE331314B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
SE10042/65A 1964-07-31 1965-07-30 SE331314B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US386654A US3339128A (en) 1964-07-31 1964-07-31 Insulated offset gate field effect transistor

Publications (1)

Publication Number Publication Date
SE331314B true SE331314B (xx) 1970-12-21

Family

ID=23526498

Family Applications (1)

Application Number Title Priority Date Filing Date
SE10042/65A SE331314B (xx) 1964-07-31 1965-07-30

Country Status (7)

Country Link
US (1) US3339128A (xx)
BR (1) BR6571601D0 (xx)
DE (1) DE1514362B1 (xx)
ES (1) ES315940A1 (xx)
GB (1) GB1110391A (xx)
NL (1) NL6509900A (xx)
SE (1) SE331314B (xx)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6501946A (xx) * 1965-02-17 1966-08-18
US3450960A (en) * 1965-09-29 1969-06-17 Ibm Insulated-gate field effect transistor with nonplanar gate electrode structure for optimizing transconductance
US3439236A (en) * 1965-12-09 1969-04-15 Rca Corp Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component
GB1139170A (en) * 1965-12-22 1969-01-08 Mullard Ltd Thin film transistors
GB1175601A (en) * 1966-03-28 1969-12-23 Matsushita Electronics Corp Insulated-Gate Field-Effect Transistor
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
US3454844A (en) * 1966-07-01 1969-07-08 Hughes Aircraft Co Field effect device with overlapping insulated gates
US3463974A (en) * 1966-07-01 1969-08-26 Fairchild Camera Instr Co Mos transistor and method of manufacture
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3775646A (en) * 1970-01-28 1973-11-27 Thomson Csf Mosaic of m.o.s. type semiconductor elements
US3604990A (en) * 1970-04-01 1971-09-14 Gen Electric Smoothly changing voltage-variable capacitor having an extendible pn junction region
US3611070A (en) * 1970-06-15 1971-10-05 Gen Electric Voltage-variable capacitor with controllably extendible pn junction region
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3902186A (en) * 1970-10-28 1975-08-26 Gen Electric Surface charge transistor devices
USRE28952E (en) * 1971-03-17 1976-08-31 Rca Corporation Shaped riser on substrate step for promoting metal film continuity
US3703667A (en) * 1971-03-17 1972-11-21 Rca Corp Shaped riser on substrate step for promoting metal film continuity
JPS5145438B1 (xx) * 1971-06-25 1976-12-03
JPS5329075B2 (xx) * 1972-02-12 1978-08-18
DE2706623A1 (de) * 1977-02-16 1978-08-17 Siemens Ag Mis-fet fuer hohe source-drain-spannungen
US4236167A (en) * 1978-02-06 1980-11-25 Rca Corporation Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels
US4318216A (en) * 1978-11-13 1982-03-09 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4232327A (en) * 1978-11-13 1980-11-04 Rca Corporation Extended drain self-aligned silicon gate MOSFET
DE3063085D1 (en) * 1979-05-30 1983-06-16 Xerox Corp Monolithic hvmosfet array
JPS5927102B2 (ja) * 1979-12-24 1984-07-03 富士通株式会社 半導体記憶装置
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
GB2150746B (en) * 1983-12-02 1988-02-24 Habib Serag El Din El Sayed Mos transistor with surface accumulation region
GB8400336D0 (en) * 1984-01-06 1984-02-08 Texas Instruments Ltd Field effect transistors
US5679968A (en) * 1990-01-31 1997-10-21 Texas Instruments Incorporated Transistor having reduced hot carrier implantation
US5124769A (en) * 1990-03-02 1992-06-23 Nippon Telegraph And Telephone Corporation Thin film transistor
JP2616153B2 (ja) * 1990-06-20 1997-06-04 富士ゼロックス株式会社 Ｅｌ発光装置
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
US5448081A (en) * 1993-02-22 1995-09-05 Texas Instruments Incorporated Lateral power MOSFET structure using silicon carbide
US10276679B2 (en) * 2017-05-30 2019-04-30 Vanguard International Semiconductor Corporation Semiconductor device and method for manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL267831A (xx) * 1960-08-17

Also Published As

Publication number Publication date
DE1514362B1 (de) 1970-10-22
BR6571601D0 (pt) 1973-09-20
NL6509900A (xx) 1966-02-01
US3339128A (en) 1967-08-29
ES315940A1 (es) 1965-11-01
GB1110391A (en) 1968-04-18

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