SE327471B - - Google Patents
Info
- Publication number
- SE327471B SE327471B SE02939/64A SE293964A SE327471B SE 327471 B SE327471 B SE 327471B SE 02939/64 A SE02939/64 A SE 02939/64A SE 293964 A SE293964 A SE 293964A SE 327471 B SE327471 B SE 327471B
- Authority
- SE
- Sweden
- Prior art keywords
- oxygen
- layer
- bombardment
- electrodes
- electrode
- Prior art date
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 12
- 239000001301 oxygen Substances 0.000 abstract 12
- 229910052760 oxygen Inorganic materials 0.000 abstract 12
- 239000010410 layer Substances 0.000 abstract 9
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 4
- 239000012298 atmosphere Substances 0.000 abstract 3
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 abstract 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000012300 argon atmosphere Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 150000004678 hydrides Chemical class 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052697 platinum Inorganic materials 0.000 abstract 2
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 abstract 2
- 229910000058 selane Inorganic materials 0.000 abstract 2
- 229910000059 tellane Inorganic materials 0.000 abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
- 150000001450 anions Chemical class 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 235000011187 glycerol Nutrition 0.000 abstract 1
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/085—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Hybrid Cells (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Physical Vapour Deposition (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL63290120A NL145987B (nl) | 1963-03-12 | 1963-03-12 | Werkwijze voor het vervaardigen van een beeldopneembuis en een beeldopneembuis vervaardigd door toepassing van deze werkwijze. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE327471B true SE327471B (nl) | 1970-08-24 |
Family
ID=19754516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE02939/64A SE327471B (nl) | 1963-03-12 | 1964-03-09 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3307983A (nl) |
| JP (1) | JPS4027987B1 (nl) |
| AT (1) | AT245640B (nl) |
| CH (1) | CH430898A (nl) |
| DE (1) | DE1489145B2 (nl) |
| DK (1) | DK119436B (nl) |
| ES (1) | ES297431A1 (nl) |
| FR (1) | FR1385209A (nl) |
| GB (1) | GB1070622A (nl) |
| NL (2) | NL145987B (nl) |
| NO (1) | NO116423B (nl) |
| SE (1) | SE327471B (nl) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR95921E (fr) * | 1963-08-06 | 1972-03-10 | Gen Electric | Plaque au monoxyde de plomb pour électrophotographie par rayons x, et procédé pour sa préparation. |
| NL6500458A (nl) * | 1965-01-15 | 1966-07-18 | ||
| US3468705A (en) * | 1965-11-26 | 1969-09-23 | Xerox Corp | Method of preparing lead oxide films |
| US3492621A (en) * | 1966-06-24 | 1970-01-27 | Nippon Kogaku Kk | High sensitivity photoconductive cell |
| US3607388A (en) * | 1967-03-18 | 1971-09-21 | Tokyo Shibaura Electric Co | Method of preparing photoconductive layers on substrates |
| JPS4910709B1 (nl) * | 1968-03-08 | 1974-03-12 | ||
| US3530055A (en) * | 1968-08-26 | 1970-09-22 | Ibm | Formation of layers of solids on substrates |
| JPS4929828B1 (nl) * | 1968-10-25 | 1974-08-07 | ||
| US4189406A (en) * | 1974-02-04 | 1980-02-19 | Eastman Kodak Company | Method for hot-pressing photoconductors |
| US3909308A (en) * | 1974-08-19 | 1975-09-30 | Rca Corp | Production of lead monoxide coated vidicon target |
| US4170662A (en) * | 1974-11-05 | 1979-10-09 | Eastman Kodak Company | Plasma plating |
| US4001099A (en) * | 1976-03-03 | 1977-01-04 | Rca Corporation | Photosensitive camera tube target primarily of lead monoxide |
| JPH068509B2 (ja) * | 1985-09-17 | 1994-02-02 | 勝 岡田 | 強誘電体薄膜の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH291362A (de) * | 1950-08-03 | 1953-06-15 | Berghaus Elektrophysik Anst | Verfahren und Vorrichtung zur Durchführung technischer Prozesse mittels Gasentladungen, die mit einer kathodeischen Werkstoffzerstäubung verbunden sind. |
| US3174882A (en) * | 1961-02-02 | 1965-03-23 | Bell Telephone Labor Inc | Tunnel diode |
-
0
- NL NL290120D patent/NL290120A/xx unknown
-
1963
- 1963-03-12 NL NL63290120A patent/NL145987B/nl not_active IP Right Cessation
-
1964
- 1964-03-09 AT AT201164A patent/AT245640B/de active
- 1964-03-09 DE DE19641489145 patent/DE1489145B2/de active Pending
- 1964-03-09 DK DK118564AA patent/DK119436B/da unknown
- 1964-03-09 SE SE02939/64A patent/SE327471B/xx unknown
- 1964-03-09 NO NO152357A patent/NO116423B/no unknown
- 1964-03-09 CH CH298564A patent/CH430898A/de unknown
- 1964-03-10 GB GB10053/64A patent/GB1070622A/en not_active Expired
- 1964-03-10 ES ES0297431A patent/ES297431A1/es not_active Expired
- 1964-03-10 US US350872A patent/US3307983A/en not_active Expired - Lifetime
- 1964-03-12 FR FR967120A patent/FR1385209A/fr not_active Expired
- 1964-03-12 JP JP1360464A patent/JPS4027987B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AT245640B (de) | 1966-03-10 |
| DE1489145A1 (de) | 1969-01-09 |
| NO116423B (nl) | 1969-03-24 |
| CH430898A (de) | 1967-02-28 |
| NL145987B (nl) | 1975-05-15 |
| GB1070622A (en) | 1967-06-01 |
| DK119436B (da) | 1971-01-04 |
| ES297431A1 (es) | 1964-05-16 |
| DE1489145B2 (de) | 1970-09-10 |
| JPS4027987B1 (nl) | 1965-12-10 |
| NL290120A (nl) | |
| US3307983A (en) | 1967-03-07 |
| FR1385209A (fr) | 1965-01-08 |
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